• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.163-166
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• 2001

The stochiometric mix of evaporating materials for the $ZnGa_{2}Se_{4}$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $ZnGa_{2}Se_{4}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnGa_{2}Se_{4}$ single crystal trun films measured from Hall effect by van der Pauw method are $9.63{\times}10^{17}cm^{-3}$, $296cm^{2}/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c axis of the $ZnGa_{2}Se_{4}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$ So and the crystal field splitting $\Delta$Cr were 251.9 meV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on $ZnGa_{2}Se_{4}$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton $(A^{0},X)$ having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.167-170
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• 2001

The stochiometric mix of evaporating materials for the $CdGa_{2}Se_{4}$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_{2}Se_{4}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_{2}Se_{4}$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3},345cm^{2}/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_{2}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$ So and the crystal field splitting $\Delta$Cr were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_{2}Se_{4}$ single crystal thin film, we observed free excition (Ex) existing only high Quality crystal and neutral bound exiciton $(D^{0},X)$ having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.

• Progress in Medical Physics
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• v.13 no.4
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• pp.229-233
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• 2002

We have tested a combined CT/SPECT system with a single CZT detector for x-ray and gamma-ray medical imaging. The size of detector is 10$\times$10$\times$5 ㎣, and the anodes are pixellated as a 4$\times$4 array with a pixel dimension of $1.5\times$1.5 $\textrm{mm}^2$. The cathode was coated with a continuous Au-plated. We have characterized the system performance by scanning a radiographic resolution phantom and the Hoffman Brain phantom. Pulse counting electronics with very short shaping time (50 ㎱) are used to satisfy high photon rates in x-ray imaging, and response linearity up to 3$\times$10$^{5}$ counts per second per detector element is achieved. Energy resolution of 10.4% and 5.3% FWHM at Tc-99m 140 keV peak are obtained for the 50 ㎱ and 2 $mutextrm{s}$ shaping times, respectively. The spatial resolutions of CT and SPECT are about 1mm and 9mm, respectively. Photopeak efficiency of detector systems are 41.0% for 50㎱ and 72.5% for 2 $mutextrm{s}$ shaping time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.167-170
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• 2001

The stochiometric mix of evaporating materials for the CdGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 630$^{\circ}C$ and 420$^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CdGa$_2$Se$_4$ single crystal thin films measured from Hall erect by van der Pauw method are 8.27x10$\^$17/ cm$\^$-3/, 345 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the Photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on CdGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$\_$X/) existing only high quality crystal and neutral bound exiciton (D$\^$0/,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excision were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV,

• Nuclear Engineering and Technology
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• v.52 no.5
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• pp.1029-1035
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• 2020

The detector suffers from pulse pileup by overlapping of the signals when it was used in high radiation fields. The pulse pileup deteriorates the energy spectrum and causes count losses due to random co-incidences, which might not resolve within the resolving time of the detection system. In this study, it is aimed to propose a new pulse pileup correction method. The proposed method is to correct the start point of the pileup pulse. The parameters are obtained from the fitted exponential curve using the peak point of the previous pulse and the start point of the pileup pulse. The amplitude at the corrected start point of the pileup pulse can be estimated by the peak time of the pileup pulse. The system is composed of a NaI (Tl) scintillation crystal, a photomultiplier tube, and an oscilloscope. A 61 μCi ¹³⁷Cs check-source was placed at a distance of 3 cm, 5 cm, and 10 cm, respectively. The gamma energy spectra for the radioisotope of ¹³⁷Cs were obtained to verify the proposed method. As a result, the correction of the pulse pileup through the proposed method shows a remarkable improvement of FWHM at 662 keV by 29, 39, and 7%, respectively.

• Nuclear Engineering and Technology
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• v.51 no.2
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• pp.432-438
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• 2019

In the study of nuclear structure, the fast timing technique can be used to measure the lifetime of excited states. In the paper, we have developed a new fast timing system, which is made up of two $LaBr_3:Ce$ detectors and a set of waveform sampling system. The sampling system based on domino ring sampler version 4 chip (DRS4) can digitize and store the waveform information of detector signal, with a smaller volume and higher timing accuracy, and the waveform data are performed by means of digital waveform analysis methods. The coincidence time resolution of the fast timing system for two annihilation 511 keV ${\gamma}$ photon is 200ps (FWHM), the energy resolution is 3.5%@511 keV, and the energy linear response in the large dynamic range is perfect. Meanwhile, to verify the fast timing performance of the system, the $^{152}Gd-2_1^+$ state form ${\beta}^+$ decay of $^{152}Eu$ source is measured. The measured lifetime is $45.3({\pm}5.0)ps$, very close to the value of the National Nuclear Data Center (NNDC: $46.2({\pm}3.9)ps$). The experimental results indicate that the fast timing system is capable of measuring the lifetime of dozens of ps. Therefore, the system can be widely used in the research of the fast timing technology.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.83-83
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• 2003

The stochiometric mix of evaporating materials for the CuInSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuInSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 62$0^{\circ}C$ and 41$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CuInSe$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.62$\times$10$^{16}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 6.1 meV and 175.2 meV at 10 K, respectively. From the photoluminescence measurement on CuInSe$_2$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 7 meV and 5.9 meV, respectivity. By Haynes rule, an activation energy of impurity was 59 meV.

• The Korean Journal of Nuclear Medicine Technology
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• v.14 no.1
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• pp.54-60
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• 2010

Purpose: Nuclear medicine manufacturers provide various softwares which shorten imaging time using their own image processing techniques such as UlatraSPECT, ASTONISH, Flash3D, Evolution, and nSPEED. Seoul National University Hospital has introduced softwares from Siemens and Philips, but it was still hard to understand algorithm difference between those two softwares. Thus, the purpose of this study was to figure out the difference of two softwares in planar images and research the possibility of application to images produced with high energy isotopes. Materials and Methods: First, a phantom study was performed to understand the difference of softwares in static studies. Various amounts of count were acquired and the images were analyzed quantitatively after application of PIXON, Siemens and ASTONISH, Philips, respectively. Then, we applied them to some applicable static studies and searched for merits and demerits. And also, they have been applied to images produced with high energy isotopes. Finally, A blind test was conducted by nuclear medicine doctors except phantom images. Results: There was nearly no difference between pre and post processing image with PIXON for FWHM test using capillary source whereas ASTONISH was improved. But, both of standard deviation(SD) and variance were decreased for PIXON while ASTONISH was highly increased. And in background variability comparison test using IEC phantom, PIXON has been decreased over all while ASTONISH has shown to be somewhat increased. Contrast ratio in each spheres has also been increased for both methods. For image scale, window width has been increased for 4~5 times after processing with PIXON while ASTONISH showed nearly no difference. After phantom test analysis, ASTONISH seemed to be applicable for some studies which needs quantitative analysis or high contrast, and PIXON seemed to be applicable for insufficient counts studies or long time studies. Conclusion: Quantitative values used for usual analysis were generally improved after application of the two softwares, however it seems that it's hard to maintain the consistency for all of nuclear medicine studies because result images can not be the same due to the difference of algorithm characteristic rather than the difference of gamma cameras. And also, it's hard to expect high image quality with the time shortening method such as whole body scan. But it will be possible to apply to static studies considering the algorithm characteristic or we can expect a change of image quality through application to high energy isotope images.

• Progress in Superconductivity and Cryogenics
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• v.19 no.1
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• pp.36-41
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• 2017

The effects of $MgB_4$ addition on the superconducting properties and the microstructure of in situ processed $MgB_2$ bulk superconductors were studied. $MgB_4$ powder of 1-20 wt.% was mixed with (Mg + 2B) powder and then pressed into pellets. The pellets of (Mg + 2B + $xMgB_4$) were heat-treated at $650^{\circ}C$ for 1 h in flowing argon. The powder X-ray diffraction (XRD) analysis for the heat-treated samples showed that the major formed phase in all samples was $MgB_2$ and the minor phases were $MgB_4$ and MgO. The full width at half maximum (FWHM) values showed that the grain size of $MgB_2$ decreased as the amount of $MgB_4$ addition increased. $MgB_4$ particles included in a $MgB_2$ matrix is considered to suppress the grain growth of $MgB_2$. The onset temperatures ($T_{c,onset}$) of $MgB_2$ with $MgB_4$ addition (0-10 wt.%) was between 37-38 K. The 20 wt.% $MgB_4$ addition slightly reduced the $T_{c,onset}$ of $MgB_2$ to 36.5 K. This result indicates that $MgB_4$ addition did not influence the superconducting transition temperature ($T_c$) of $MgB_2$ significantly. On the other hand, the small additions of 1-5 wt.% $MgB_4$ increased the critical current density ($J_c$) of $MgB_2$. The $J_c$ enhancement by $MgB_4$ addition is attributed not only to the grain size refinement but also to the possible flux pinning of $MgB_4$ particles dispersed in a $MgB_2$ matrix.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.372-375
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• 1988

The III-V ternary alloy semiconductor $In_{l-x}Ga_{x}As$ were grown by the temperature Gradient of $0.60{\leq}x{\leq}0.98$. The electrical properties were investigated by the Hall effect measurement with the Van der Pauw method in the temperature range of $90{\sim}300K$. $In_{l-x}Ga_{x}As$ were revealed n-type and the carrier concentration at 300K were in the range of $9.69{\times}10^{16}cm^{-3}{\sim}7.49{\times}10^{17}cm^{-3}$. The resistivity was increased and the carrier mobility was decreased with increasing the composition ratio. The optical energy gap determined by optical transmission were $20{\sim}30meV$ lower than theoretical valves on the basis of absorption in the conduction band tail and it was decreased with increasing the temperature by the Varshni rule. In the photoluminescence of undoped $In_{l-x}Ga_{x}As$ at 20K, the main emission was revealed by the radiative recombination of shallow donor(Si) to acceptor(Zn) and the peak energy was increased with increasing the composition, X. The diffusion depth of Zn increases proportionally with the square root of diffusion time, and the activation energy for the Zn diffusion into $In_{0.10}Ga_{0.90}As$ was 2.174eV and temperatures dependence of diffusion coefficient was D = 87.29 exp(-2.174/$K_{B}T$). The Zn diffusion p-n $In_{x}Ga_{x}As$ diode revealed the good rectfying characteristics and the diode factor $\beta{\approx}2$. The electroluminescence spectrum for the Zn-diffusion p-n $In_{0.10}Ga_{0.90}As$ diode was due to radiative recombation between the selectron trap level(${\sim}140meV$) and Zn acceptor level(${\sim}30meV$). The peak energy and FWHM of electroluminescence spectrum at 77K were 1.262eV and 81.0meV, respectively.