• Title/Summary/Keyword: embedded capacitor

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Memory Characteristics of Pt Nanoparticle-embedded MOS Capacitors Fabricated at Room Temperature

  • Kim, Sung-Su;Cho, Kyoung-Ah;Kwak, Ki-Yeol;Kim, Sang-Sig
    • Transactions on Electrical and Electronic Materials
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    • v.13 no.3
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    • pp.162-164
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    • 2012
  • In this study, we fabricate Pt nanoparticle (NP)-embedded MOS capacitors at room temperature and investigate their memory characteristics. The Pt NPs are separated from each other and situated between the tunnel and control oxide layers. The average size and density of the Pt NPs are 4 nm and $3.2{\times}10^{12}cm^{-2}$, respectively. Counterclockwise hysteresis with a width of 3.3 V is observed in the high-frequency capacitance-voltage curve of the Pt NP-embedded MOS capacitor. Moreover, more than 93% of the charge remains even after $10^4$ s.

Capacitance-voltage Characteristics of MOS Capacitors with Ge Nanocrystals Embedded in HfO2 Gate Material

  • Park, Byoung-Jun;Lee, Hye-Ryeong;Cho, Kyoung-Ah;Kim, Sang-Sig
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.8
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    • pp.699-705
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    • 2008
  • Capacitance versus voltage (C-V) characteristics of Ge-nanocrystal (NC)-embedded metal-oxide-semiconductor (MOS) capacitors with $HfO_2$ gate material were investigated in this work. The current versus voltage (I-V) curves obtained from Ge-NC-embedded MOS capacitors fabricated with the $NH_3$ annealed $HfO_2$ gate material reveal the reduction of leakage current, compared with those of MOS capacitors fabricated with the $O_2$ annealed $HfO_2$ gate material. The C-V curves of the Ge-NC-embedded MOS capacitor with $HfO_2$ gate material annealed in $NH_3$ ambient exhibit counterclockwise hysteresis loop of about 3.45 V memory window when bias voltage was varied from -10 to + 10 V. The observed hysteresis loop indicates the presence of charge storages in the Ge NCs caused by the Fowler-Nordheim (F-N) tunneling. In addition, capacitance versus time characteristics of Ge-NC-embedded MOS capacitors with $HfO_2$ gate material were analyzed to investigate their retention property.

The Design of Controller and Modeling for Bi-directional DC-DC Converter including an Energy Storage System (에너지 저장장치를 포함하는 양방향 DC-DC 컨버터 모델링 및 제어기 설계)

  • Kim, Seung-Min;Yang, Seung-Dae;Choi, Ju-Yeop;Choy, Ick;An, Jin-Woong;Lee, Sang-Chul;Lee, Dong-Ha
    • Journal of the Korean Solar Energy Society
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    • v.32 no.spc3
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    • pp.235-244
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    • 2012
  • This paper presents a design and simulation of bi-directional DC/DC boost converter for a fuel cell system. In this paper, we analyze the equivalent model of both a boost converter and a buck converter. Also we propose the controller of bi-directional DC-DC converter, which has buck mode of charging a capacitor and boost mode of discharging a capacitor. In order to design a controller, we draw bode plots of the control-to-output transfer function using specific parameters and incorporate proper compensator in a closed loop. As a result, it has increased PM(Phase Margin) for better dynamic performance. The proposed bi-directional DC-DC converter's 3pole-2zero compensation method has been verified with computer simulation and simulation results obtained demonstrates the validity of the proposed control scheme.

Fully Embedded 2.4GHz Compact Band Pass Filter into Multi-Layered Organic Packaging Substrate

  • Lee, Seung-J.;Lee, Duk-H.;Park, Jae-Y.
    • Journal of the Microelectronics and Packaging Society
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    • v.15 no.1
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    • pp.39-44
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    • 2008
  • In this paper, fully embedded 2.4GHz WLAN band pass filter (BPF) was investigated into a multi-layered organic packaging substrate using high Q spiral stacked inductors and high Dk MIM capacitors for low cost RF System on Package (SOP) applications. The proposed 2.4GHz WLAN BPF was designed by modifying chebyshev second order filter circuit topology. It was comprised of two parallel LC resonators for obtaining two transmission zeros. It was designed by using 2D circuit and 3D EM simulators for finding out optimal geometries and verifying their applicability. It exhibited an insertion loss of max -1.7dB and return loss of min -l7dB. The two transmission zeros were observed at 1.85 and 6.7GHz, respectively. In the low frequency band of $1.8GHz{\sim}1.9GHz$, the stop band suppression of min -23dB was achieved. In the high frequency band of $4.1GHz{\sim}5.4GHz$, the stop band suppression of min -l8dB was obtained. It was the first embedded and the smallest one of the filters formed into the organic packaging substrate. It has a size of $2.2{\times}1.8{\times}0.77mm^3$.

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Effect of $BaTiO_3$ Powder Content on the Dielectric Constant of Epoxy/$BaTiO_3$ Composite Embedded Capacitor Films ($BaTiO_3$ 입자 함량이 에폭시/$BaTiO_3$ 복합 내장형 커패시터 필름의 유전상수에 미치는 영향)

  • Cho Sung-Dong;Lee Joo-Yeon;Hyun Jin-Gul;Lee Sang-Yong;Paik Kyung-Wook
    • Journal of the Microelectronics and Packaging Society
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    • v.11 no.2 s.31
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    • pp.1-9
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    • 2004
  • We investigated the effect of $BaTiO_3$ powder content on the dielectric constant of epoxy/$BaTiO_3$ composite embedded capacitor films (ECFs). Variations of the dielectric constant of epoxy/$BaTiO_3$ composite ECFs with unimodal $BaTiO_3$ powder content were measured. To explain this result, density of the ECFs was measured, and surface and cross section images of the ECFs were observed. In addition, variations of the dielectric constant of epoxy/$BaTiO_3$ composite ECFs with various bimodal combinations were measured. In the case of unimodal powder, the maximum dielectric constant was about 60 at $60\;vol\%$ S4 powder. And more powder addition lowered the dielectric constant of the ECFs, which was due to voids or pores formation by excess $BaTiO_3$ powder. In the case of bimodal combination, $75vol\%\;BaTiO_3$ powder loading and the dielectric constant of 90 were achieved using $S_5+C_1$ combination, biggest and smallest powder combination.

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Study on the Effects of BaTiO$_3$ Particle Size on Dielectric Constant and Leakage Current of Epoxy/BaTiO$_3$ Composite Films for Embedded Capacitors (BaTiO$_3$ 분말의 입자 크기가 내장형 커패시턴용 에폭시/BaTiO$_3$복합체 필름의 유전상수와 누설전류에 미치는 영향에 관한 연구)

  • 조성동;이주연;백경욱
    • Journal of the Microelectronics and Packaging Society
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    • v.9 no.2
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    • pp.11-17
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    • 2002
  • Polymer/ceramic composite is of great interest as a dielectric material for embedded capacitors. This paper is concerned in the effects of $BaTiO_3$ particle size on epoxy/$BaTiO_3$ composite films for embedded capacitors. 6 different size powders smaller than 1 $\mu\textrm{m}$ in diameter and bisphenol-A type epoxy were used for this experiment. Dielectric constant of the epoxy/$BaTiO_3$ composite capacitors increases as the powder size increases at the same powder loading, which is due to the increase of tetragonality of the powders as particle size increases. And leakage current of the capacitors also increases dramatically as the powder size increases. It was explained that this is due to the decrease of the number of $BaTiO_3$epoxy/$BaTiO_3$ potential barriers per unit length and, moreover, the enhancement of potential barrier lowering effects caused by increase of potential drop per one barrier. As a result, there is tradeoff between high dielectric constant and low leakage current in the epoxy/$BaTiO_3$ composite capacitors. So it is important to select proper size $BaTiO_3$ powders in accordance with needs.

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Characteristics of Embedded Capacitor with Various Electrode Structures (전극구조에 의한 임베디드 캐패시터의 특성 개선)

  • Hong, Soon-Kwan;Nam, Myung-Woo
    • Proceedings of the KAIS Fall Conference
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    • 2008.11a
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    • pp.60-62
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    • 2008
  • 본 논문에서는 PCB(Printed Circuit Board) 기판의 내부에 만들어지는 임베디드 캐패시터에서 정전용량 밀도를 높이고 고주파 특성을 향상시키기 위한 방안을 연구하였다. 전극의 형태 및 유전체와의 적층구조를 변형하면서 임베디드 캐패시터의 특성변화를 분석하였으며, 이를 통하여 정전용량 밀도 및 고주파 특성을 개선할 수 있었다.

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An autonomous synchronized switch damping on inductance and negative capacitance for piezoelectric broadband vibration suppression

  • Qureshi, Ehtesham Mustafa;Shen, Xing;Chang, Lulu
    • International Journal of Aeronautical and Space Sciences
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    • v.17 no.4
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    • pp.501-517
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    • 2016
  • Synchronized switch damping (SSD) is a structural vibration control technique in which a piezoelectric patch attached to or embedded into the structure is connected to or disconnected from the shunt circuit in order to dissipate the vibration energy of the host structure. The switching process is performed by a digital signal processor (DSP) which detects the displacement extrema and generates a command to operate the switch in synchronous with the structure motion. Recently, autonomous SSD techniques have emerged in which the work of DSP is taken up by a low pass filter, thus making the whole system autonomous or self-powered. The control performance of the previous autonomous SSD techniques heavily relied on the electrical quality factor of the shunt circuit which limited their damping performance. Thus in order to reduce the influence of the electrical quality factor on the damping performance, a new autonomous SSD technique is proposed in this paper in which a negative capacitor is used along with the inductor in the shunt circuit. Only a negative capacitor could also be used instead of inductor but it caused saturation of negative capacitor in the absence of an inductor due to high current generated during the switching process. The presence of inductor in the shunt circuit of negative capacitor limits the amount of current supplied by the negative capacitance, thus improving the damping performance. In order to judge the control performance of proposed autonomous SSDNCI, a comparison is made between the autonomous SSDI, autonomous SSDNC and autonomous SSDNCI techniques for the control of an aluminum cantilever beam subjected to both single mode and multimode excitation. A value of negative capacitance slightly greater than the piezoelectric patch capacitance gave the optimum damping results. Experiment results confirmed the effectiveness of the proposed autonomous SSDNCI technique as compared to the previous techniques. Some limitations and drawbacks of the proposed technique are also discussed.

Electrical Characteristics of Carbon Nanotube Embedded 4H-SiC MOS Capacitors (탄소나노튜브를 첨가한 4H-SiC MOS 캐패시터의 전기적 특성)

  • Lee, Taeseop;Koo, Sang-Mo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.9
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    • pp.547-550
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    • 2014
  • In this study, the electrical characteristics of the nickel (Ni)/carbon nanotube (CNT)/$SiO_2$ structures were investigated in order to analyze the mechanism of CNT in MOS device structures. We fabricated 4H-SiC MOS capacitors with or without CNTs. CNT was dispersed by isopropyl alcohol. The capacitance-voltage (C-V) and current-voltage (I-V) are characterized. Both devices were measured by Keithley 4200 SCS. The experimental flatband voltage ($V_{FB}$) shift was positive. Near-interface trap charge density ($N_{it}$) and negative oxide trap charge density ($N_{ox}$) value of CNT embedded MOS capacitors was less than that values of reference samples. Also, the leakage current of CNT embedded MOS capacitors is higher than reference samples. It has been found that its oxide quality is related to charge carriers and/or defect states in the interface of MOS capacitors.

Effect of Ceramic Powder Content and Shape on the Electrical Properties of Ceramic(BaTiO3)-polymer(Epoxy) Composite for Embedded Capacitors (임베디드 커패시터용 세라믹(BaTiO3)-고분자(에폭시) 필름의 세라믹 분말 형상 및 함량에 따른 전기적 특성)

  • Han, Jeong-Woo;Yoon, Jung-Rag;Je, Hae-June;Lee, Dong-Ho;Lee, Kyung-Min
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.6
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    • pp.495-500
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    • 2009
  • The ceramic($BaTiO_3$)-polymer(epoxy) composites have been widely investigated as dielectric materials for embedded capacitors in printed circuit boards (PCBs). The dielectric properties of $BaTiO_3$/epoxy composites prepared using the agglomerated $BaTiO_3$ particles were investigated in the present study. The dielectric constants of the composites prepared using the agglomerated $BaTiO_3$ particles were about 2 times higher than those of the composites with the dispersed $BaTiO_3$ particles. The insulation resistance of the composites prepared using the agglomerated $BaTiO_3$ particles were lower than those of the composites with dispersed $BaTiO_3$ particles. As a result, there is tradeoff between high dielectric constant and insulation resistance in the $BaTiO_3$/epoxy composites. So it is important to select proper agglomerated or dispersed $BaTiO_3$ particles in accordance with needs.