• Journal of the Korean Statistical Society
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• v.36 no.4
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• pp.479-488
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• 2007

The elliptic random field is an extension to the Gaussian random field. We proved a theorem which characterizes the elliptic random field. We proposed a heuristic approach to derive an approximation to the distribution of the size of one connected component of its excursion set above a high threshold. We used this approximation to approximate the distribution of the largest cluster size. We used simulation to compare the approximation with the exact distribution.

• Journal of IKEEE
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• v.23 no.1
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• pp.58-67
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• 2019

A design of an elliptic curve cryptography (ECC) processor that supports both pseudo-random curves and Koblitz curves over $GF(2^m)$ defined by the NIST standard is described in this paper. A finite field arithmetic circuit based on a word-based Montgomery multiplier was designed to support five key lengths using a datapath of fixed size, as well as to achieve a lightweight hardware implementation. In addition, Lopez-Dahab's coordinate system was adopted to remove the finite field division operation. The ECC processor was implemented in the FPGA verification platform and the hardware operation was verified by Elliptic Curve Diffie-Hellman (ECDH) key exchange protocol operation. The ECC processor that was synthesized with a 180-nm CMOS cell library occupied 10,674 gate equivalents (GEs) and a dual-port RAM of 9 kbits, and the maximum clock frequency was estimated at 154 MHz. The scalar multiplication operation over the 223-bit pseudo-random elliptic curve takes 1,112,221 clock cycles and has a throughput of 32.3 kbps.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.10a
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• pp.190-192
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• 2018

This paper describes a design of an elliptic curve cryptography (ECC) processor that supports five pseudo-random curves and five Koblitz curves over binary field defined by the NIST standard. The ECC processor adopts the Lopez-Dahab projective coordinate system so that scalar multiplication is computed with modular multiplier and XORs. A word-based Montgomery multiplier of $32-b{\times}32-b$ was designed to implement ECCs of various key lengths using fixed-size hardware. The hardware operation of the ECC processor was verified by FPGA implementation. The ECC processor synthesized using a 0.18-um CMOS cell library occupies 10,674 gate equivalents (GEs) and 9 Kbits RAM at 100 MHz, and the estimated maximum clock frequency is 154 MHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.24 no.11
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• pp.1470-1476
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• 2020

This paper describes a design of a lightweight security system-on-chip (SoC) suitable for the implementation of security protocols for IoT and mobile devices. The security SoC using Cortex-M0 as a CPU integrates hardware crypto engines including an elliptic curve cryptography (ECC) core, a SHA3 hash core, an ARIA-AES block cipher core and a true random number generator (TRNG) core. The ECC core was designed to support twenty elliptic curves over both prime field and binary field defined in the SEC2, and was based on a word-based Montgomery multiplier in which the partial product generations/additions and modular reductions are processed in a sub-pipelining manner. The H/W-S/W co-operation for elliptic curve digital signature algorithm (EC-DSA) protocol was demonstrated by implementing the security SoC on a Cyclone-5 FPGA device. The security SoC, synthesized with a 65-nm CMOS cell library, occupies 193,312 gate equivalents (GEs) and 84 kbytes of RAM.

• Journal of KIISE:Computer Systems and Theory
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• v.34 no.3
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• pp.93-100
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• 2007

Since Koblitz and Miller suggested the use of elliptic curves in cryptography, there has been an extensive literature on elliptic curve cryptosystem (ECC). The use of ECC is based on the observation that the points on an elliptic curve form an additive group under point addition operation. To realize secure cryptosystems using these groups, it is very important to find an elliptic curve whose group order is divisible by a large prime, and also to find a base point whose order equals this prime. While there have been many dramatic improvements on finding an elliptic curve and computing its group order efficiently, there are not many results on finding an adequate base point for a given curve. In this paper, we propose an efficient method to find a random base point on an elliptic curve defined over $GF(p^m)$. We first show that the critical operation in finding a base point is exponentiation. Then we present efficient algorithms to accelerate exponentiation in $GF(p^m)$. Finally, we implement our algorithms and give experimental results on various practical elliptic curves, which show that the new algorithms make the process of searching for a base point 1.62-6.55 times faster, compared to the searching algorithm based on the binary exponentiation.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.179-200
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• 1996

The intrinsic instabilities of fluid flow occurred in the melt of the Czochralski crystal growth system Czochralski method, asymmetric flow patterns and temperature profiles in the melt have been studied by many researchers. The idea that the non-symmetric structure of the growing equipment is responsible for the asymmetric profiles is usually accepted at the first time. However further researches revealed that some intrinsic instabilities not related to the non-symmetric equipment structure in the melt could also appear. Ristorcelli had pointed out that there are many possible causes of instabilities in the melt. The instabilities appears because of the coupling effects of fluid flow and temperature profiles in the melt. Among the instabilities, the B nard type instabilities with no or low crucible rotation rates are analyzed by the visualizing experiments using X-ray radiography and the 3-D numerical simulation in this study. The velocity profiles in the Silicon melt at different crucible rotation rates were measured using X-ray radiography method using tungsten tracers in the melt. The results showed that there exits two types of fluid flow mode. One is axisymmetric flow, the other is asymmetric flow. In the axisymmetric flow, the trajectory of the tracers show torus pattern. However, more exact measurement of the axisymmetrc case shows that this flow field has small non-axisymmetric components of the velocity. When fluid flow is asymmetric, the tracers show random motion from the fixed view point. On the other hand, when the observer rotates to the same velocity of the crucible, the trajectory of the tracer show a rotating motion, the center of the motion is not same the center of the melt. The temperature of a point in the melt were measured using thermocouples with different rotating rates. Measured temperatures oscillated. Such kind of oscillations are also measured by the other researchers. The behavior of temperature oscillations were quite different between at low rotations and at high rotations. Above experimental results means that the fluid flow and temperature profiles in the melt is not symmetric, and then the mode of the asymmetric is changed when rotation rates are changed. To compare with these experimental results, the fluid flow and temperature profiles at no rotation and 8 rpm of crucible rotation rates on the same size of crucible is calculated using a 3-dimensional numerical simulation. A finite different method is adopted for this simulation. 50×30×30 grids are used. The numerical simulation also showed that the velocity and flow profiles are changed when rotation rates change. Futhermore, the flow patterns and temperature profiles of both cases are not axisymmetric even though axisymmetric boundary conditions are used. Several cells appear at no rotation. The cells are formed by the unstable vertical temperature profiles (upper region is colder than lower part) beneath the free surface of the melt. When the temperature profile is combined with density difference (Rayleigh-B nard instability) or surface tension difference (Marangoni-B nard instability) on temperature, cell structures are naturally formed. Both sources of instabilities are coupled to the cell structures in the melt of the Czochralski process. With high rotation rates, the shape of the fluid field is changed to another type of asymmetric profile. Because of the velocity profile, isothermal lines on the plane vertical to the centerline change to elliptic. When the velocity profiles are plotted at the rotating view point, two vortices appear at the both sides of centerline. These vortices seem to be the main reason of the tracer behavior shown in the asymmetric velocity experiment. This profile is quite similar to the profiles created by the baroclinic instability on the rotating annulus. The temperature profiles obtained from the numerical calculations and Fourier transforms of it are quite similar to the results of the experiment. bove esults intend that at least two types of intrinsic instabilities can occur in the melt of Czochralski growing systems. Because the instabilities cause temperature fluctuations in the melt and near the crystal-melt interface, some defects may be generated by them. When the crucible size becomes large, the intensity of the instabilities should increase. Therefore, to produce large single crystals with good quality, the behavior of the intrinsic instabilities in the melt as well as the effects of the instabilities on the defects in the ingot should be studied. As one of the cause of the defects in the large diameter Silicon single crystal grown by the