• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.249-251
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• 1994

We fabricated the sample of M-I-M with the insulating layer SiO. Refractive index of wave length, photon energy, absorption rate of SiO evaporation thin film are experimentally examined by spectroscopic Ellipsometer. The calculated equations of refractive index, absorption rate and permittivity of SiO thin film are induced. Calculated values and experimental values are compared and then mutual validity is proved.

• Current Optics and Photonics
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• v.4 no.4
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• pp.353-360
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• 2020

Adopting an elaborately designed reflective objective consisting of four mirrors, we have developed a rotating-polarizer-type microspot spectroscopic ellipsometer (SE) with an ultra-small spot size. The diameter of the focused beam, whether evaluated using a direct-image method or a knife-edge method, is less than 8.4 ㎛. After proper correction for the polarizing effect of the mirrors in the reflective objective, we unambiguously determine the dispersion of the complex refractive index and the thickness of monolayer MoS₂ using the measured microspot-spectroellipsometric data. The measured ellipsometric spectra are sensitive enough to identify small variations in thickness of MoS₂ flakes, which ranged from 0.48 nm to 0.67 nm.

• New & Renewable Energy
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• v.4 no.2
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• pp.68-73
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• 2008

It is very important that constitution of good hetero-junction interface with a high quality amorphous silicon thin films on very cleaned c-Si wafer for making high efficiency hetero-junction solar cells. For achieving the high efficiency solar cells, the inspection and management of c-Si wafer surface conditions are essential subjects. In this experiment, we analyzed the c-Si wafer surface very sensitively using Spectroscopic Ellipsometer for < ${\varepsilon}2$ > and u-PCD for effective carrier life time, so we accomplished < ${\varepsilon}2$ > value 43.02 at 4.25eV by optimizing the cleaning process which is representative of c-Si wafer surface conditions very well. We carried out that the deposition of high quality hydrogenated silicon amorphous thin films by RF-PECVD systems having high density and low crystallinity which are results of effective medium approximation modeling and fitting using spectroscopic ellipsometer. We reached the cell efficiency 12.67% and 14.30% on flat and textured CZ c-Si wafer each under AM1.5G irradiation, adopting the optimized cleaning and deposition conditions that we made. As a result, we confirmed that spectroscopic ellipsometry is very useful analyzing methode for hetero-junction solar cells which need to very thin and high quality multi layer structure.

• Korean Journal of Optics and Photonics
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• v.26 no.4
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• pp.195-202
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• 2015

We developed a reflection ellipsometer so that one can measure the extremely small optical anisotropy of a rubbed polyimide alignment layer, without being disturbed by the residual anisotropy of the substrate. The optical anisotropy of the alignment layer was measured as rubbing strength was increased, and the measured anisotropy was compared to the retardation obtained by using a transmission-type ellipsometer, to confirm the reliability of our reflection ellipsometer. With this measured anisotropy we could verify the formation of an alignment layer by rubbing, and could quantitatively evaluate the formation of the alignment layer.

• Korean Journal of Optics and Photonics
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• v.12 no.3
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• pp.184-189
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• 2001

The design of an ultra fast ellipsometer is suggested. It adopts the division-of-amplitude-photopolarimeter (DOAP) as the polarization state detector. It does not utilize any moving part such as the rotating polarizer(analyzer) or even any electronic modulation part like the piezo-electric phase modulator. Hence the time resolution of the present system is limited only by the response time of the photo-detector and electronic circuit as well as the analog-digital converter. The feasibility of the suggested ultra fast ellipsometer was tested and the response time with nano-second time resolution has been verified. Its future application to the investigation of kinetics including that of the phase-change optical recording media like GezSb2 Tes is discussed. ussed.

• Korean Journal of Optics and Photonics
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• v.10 no.3
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• pp.208-213
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• 1999

We proposed a new technique to precisely calibrate the angle of incidence in spectroscopic ellipsometer. The proposed technique can be useful to the thickness measurement of semiconductor thin films and optical thin films. The usefulness has been confirmed experimentally. We cut a block of optical glass into two pieces and made a prism as well as a slab using each piece. The apex angle and the angle of the minimum deviation of prism were measured. From these angles, the refractive index of glass material was calculated. From the analysis of the spectro-ellipsometric data collected near Brewster's angle, we could not only determine the error in the angle of incidence in the spectroscopic ellipsometer, but also calibrated the angle of incidence to the accuracy of 0.01 degree.

• Proceedings of the Korean Vacuum Society Conference
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• 1995.02a
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• pp.053-54
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• 1995

• Proceedings of the Optical Society of Korea Conference
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• 1997.08a
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• pp.14-14
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• 1997

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.197-197
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• 1999

Gate oxide 의 두께 감소는 gate의 캐패시턴스를 증가시켜 트랜지스터의 속도를 빠르게 하며, 동시에 저전압 동작을 가능하게 하기 때문에 gate oxide 두께는 MOS 공정 세대가 진행되어감에 따라 계속 감소할 것이다. 이러한 얇은 산화막은 device design에 명시된 두께의 특성을 나타내야 한다. Gate oxide의 두께가 작아질수록 gate oxide와 crystalline silicon간의 계면효과가 박막의 두께의 결정에 심각한 영향을 주기 때문에 정확한 두께 계측이 어렵다. 이러한 영향과 계측방법에 따라서 두께 계측의 차이가 나타난다. XTEM은 사용한 parameter에, Ellipsometer는 refractive index에, MEIS(Medium) Energy Ion Scattering)은 에너지 분해능에, Capacitor-Voltage 측정은 depletion effect에 의해 영향을 받는다. 우리는 계면의 원자분해능 분석에 통상 사용되어온 High Resolution TEM을 이용하여 약 30~70$\AA$ SiO2층의 두께와 계면 구조에 대한 분석을 하여 이를 MEIS와 0.015nm의 고감도를 가진 SE(Spectroscopy Ellipsometer), C-V 측정 결과와 비교하여 가장 좋은 두께 계측 방법을 찾고자 한다.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.1932-1938
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• 2003

We have applied spectroscopic ellipsometry to investigate $high-{\kappa}$ dielectric thin films and correlate their optical properties with fabrication processes, in particular, with high temperature annealing. The use of high-k dielectrics such as $HfO_{2}$, $Ta_{2}O_{5}$, $TiO_{2}$, and $ZrO_{2}$ as the replacement for $SiO_{2}$ as the gate dielectric in CMOS devices has received much attention recently due to its high dielectric constant. From the characteristics found in the pseudo-dielectric functions or the Tauc-Lorentz dispersions, the optical properties such as optical band gap, polycrystallization, and optical density will be discussed.