• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.439-442
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• 2004

In this study, we investigated about electrooptics characteristic of three kinds of TN cell on the polyimide surface. Monodomain alignments of thermal stressed TN cell over temperature of liquid crystal isotropic phase were almost the same as that of no thermal stressed TN cells. However, the thermal stressed TN cells have many defects. Also, threshold voltage and response time of thermal stressed TN cells show the same performances as no thermal stressed TN cells. There were little changes of value in these TN cells. However, transmittances of TN cells on the polyimide surface decrease with increasing thermal stress time. Finally, the residual DC voltage of the thermal stressed TN cell on the polyimide surface shows decrease of characteristics as increasing thermal stress time. Therefore, the thermal stability of TN cell was decreased by high thermal stress for the long times.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04a
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• pp.9-12
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• 2004

In this study, we investigated about electrooptics characteristic of three kind of TN cell on the polyimide surface. Monodomain alignments of thermal stressed TN cell over temperature of liquid crystal isotropic phase were almost same that of no thermal stressed TN cells. However, the thermal stressed TN cell have many defects. Also, threshold voltage and response time of thermal stressed TN cells show same performances of no thermal stressed TN cells. There were little changes of value in these TN cells. However, transmittances of TN cells on the polyimide surface decrease with increasing thermal stress time. Finally, the residual DC voltage of the thermal stressed TN cell on the polyimide surface show decrease of characteristics as increasing thermal stress time. Therefore, thermal stability of TN cell was decreased by high thermal stress for the long times.

• Journal of Digital Contents Society
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• v.10 no.2
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• pp.199-207
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• 2009

The Q-switching the shutter or the different optical science element puts in within the laser light resonator and the storehouse departs from the within the resonator it loses the mortar and the reversal distribution which when is sufficient creates from within the active medium, opens the shutter instantaneously and it is to do to be made to emit with the light where the energy which is accumulated within the resonator is strong very. Like this Q-switching of laser resonator--It decreases factor increasing suddenly to make. To method of Laser Q-switching mechanical switching methods, electro-optic switching methods and switching by saturable absorber methods, acousto-optic switching method etc. 4 kind are being used on a large scale. In these people the conversion which is electric in compliance with the effect which is electrooptics is widely being used the Q-switching pulse of short pulse width because being it will be able to create. Consequently, Pockel cell where it has the quality of electrooptics effect) the Q-it is become known that it is suitable it uses with switch. From the research which it sees FET and one-chip microprocessor where it is a switching element and pulse transfomer to plan and produce pockel cell Q-switch driving gears, pulse style Nd: It applied in YAG Laser system and it investigated and researched the operating characteristic of the Q-switch. Also, the Q-switch leads and Nd where it is output: YAG with forecast in compliance with a theoretical calculation it comes to buy laser beam side politics it compared and laser beam qualities which had become Q-switching it analyzed.