• Title/Summary/Keyword: electronic structures calculation

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Accurate electronic structures for Ce doped SiAlON using a semilocal exchange-correlation potential

  • Yu, Dong-Su;Jeong, Yong-Jae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.438-438
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    • 2011
  • White light-emitting diodes (LEDs), the so-called next-generation solid-state lighting, offer benefits in terms of reliability, energy-saving, maintenance, safety, lead-free, and eco-friendly. Recently, rare-earth-doped oxynitride or nitride compounds have attracted a great deal of interest as a photoluminescent material because of their unique luminescent property, especially for white LEDs applications. Ce doped ${\beta}$-SiAlON has been studied as a wavelength conversion phosphor in white LEDs thanks to its high absorption rates, high quantum efficiency, and excellent thermal stability. Previously researches were not enough to understand the detail mechanism and characteristics of ${\beta}$-SiALON. The bandgap structures and electronic structures were not exact due to limitation of calculation methods. In this study, to elucidate the Ce doping effect on the SiAlON system, accurate band structures and electronic structure of the Ce doped ${\beta}$-SiAlON was intensively investigated using density functional theory calculations. In order to get a better description of the band gaps, MBJLDA method were used. We have found a single Ce atom site in ${\beta}$-SiAlON super cell. Furthermore, the density of state, band structure and lattice constant were intensively investigated.

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Effects of iron atom, substrate on two-dimensional C2N crystals

  • Noh, Min Jong;Kim, Yong Hoon
    • Proceeding of EDISON Challenge
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    • 2016.03a
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    • pp.288-291
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    • 2016
  • Recently, there has been a lot of researches related to two-dimensional (2D) materials due to their new properties and applications emerging upon 2D confinement. A new type of graphene like two-dimensional layer material, nitrogenated holey two-dimensional structure C2N-h2D, that is possession of evenly distributed holes and nitrogen atoms with proper bandgap has been synthesized. Previous calculation studies already have shown that the variance of the orbital interaction, band structure of few-layer C2N-h2D suggests that interlayer coupling does play an important role in its electronic properties. In this point, using first-principles density functional theory calculation, we here explore the effect of porous embedded iron atom and iron substrate on encapsulated few layer C2N-h2D. We show the atomic structures and the corresponding electronic structures of Fe@C2N to elucidate the effect of iron. Finally, this study demonstrates that embedded iron C2N has AA-stacking as most favorable stacked structure in contrast to pure C2N. In addition, iron substrate modifies its encapsulated C2N from semi-metallic states to metallic state.

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Computation of Spring Constants of MEMS Socket Pins by Theoretical Analysis (이론분석에 의한 MEMS 소켓 핀의 스프링 상수 계산)

  • Bae, Kyoo-Sik;Ho, Kwang-Il
    • Korean Journal of Materials Research
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    • v.18 no.11
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    • pp.592-596
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    • 2008
  • Spring constants (displacement per unit applied load) of MEMS socket pins of given structures were computed by theoretical analysis and confirmed by the finite element method (FEM). In the theoretical analysis, the displacement of pins was calculated based on the 2-dimensional bending theory of the curved beam. For the 3-dimensional modeling, CATIA was used. After modeling, the raw data were transferred to ANSYS, which was employed in the 3-dimensional analysis for the calculation of the stress and strain and loaddisplacement The theoretical analysis and the FEM results were found to agree, with each showing the spring constants as 63.4 N/m within a reasonable load range. These results show that spring constants can be easily obtained through theoretical calculation without resorting to experiments and FEM analysis for simple and symmetric structures. For the some change of shape and structural stiffness, this theoretical analysis can be applied to MEMS socket pins.

Adsorption Selectivities between Hydroxypyridine and Pyridone Adsorbed on the Ge(100) Surface

  • Lee, Myungjin;Lee, Hangil
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.137-137
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    • 2013
  • The most stable adsorption structures and their corresponding energies of 4-pyridone, 4-hydroxypyridine, 2-pyridone and 2-hydroxypyridine have been investigated by Density Functional Theory (DFT) calculation method and high-resolution photoemission spectroscopy (HRPES). We confirmed that between the two reaction centers of 4- and 2-pyridone, only O atom of carbonyl functional group can act as a Lewis base and thus, O dative bonding structure is the most stable. On the other hand, we clarified that both the two reaction centers (the cyclic N atom and the O atom of hydroxyl functional group) of 4- and 2-hydroxypyridine (tautomers of 4- and 2-pyridone) can successfully function as a Lewis base. Through the interpretation of the N 1s and O 1s core level spectra obtained using HRPES, we could confirm the electronic structures and bonding configurations of these molecules with a coverage dependence on the Ge(100) surface.

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The Carrier Diffusion Modeling of CSP-DH Semiconductor Laser Structures (CSP-DH 구조 반도체 레이저의 캐리어 확산 방정식을 위한 모델링)

  • Lee, S.T.;Jeon, H.S.;Lee, C.Y.;Um, K.Y.;Yoon, J.W.;Yoon, S.B.;Oh, H.S.
    • Proceedings of the KIEE Conference
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    • 1988.07a
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    • pp.469-471
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    • 1988
  • The basic modeling is analyzed on the optoelectronic properties of CSP-DH laser structure using self-consistent calculation of optical field and the electron-hole distribution in the active region. Laser properties is modelled include gain profile, threshold, near field and far field pattern. This new characterization is allowed for consideration such as carrier spatial hole burning due to strong optical fields which stimulate recombination.

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Electronic State of ZnO Doped with Elements of IIIB family, Calculated by Density functional Theory (범밀도함수법을 이용하여 계산한 IIIB족 원소가 도핑된 ZnO의 전자상태)

  • Lee, Dong-Yoon;Lee, Won-Jae;Min, Bok-Ki;Kim, In-Sung;Song, Jae-Sung;Kim, Yang-Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.7
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    • pp.589-593
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    • 2005
  • The electronic states of ZnO doped with Al, Ga and In, which belong to III family elements in periodic table, were calculated using the density functional theory. In this study, the calculation was performed by two Programs; the discrete variational Xa (DV-Xa) method, which is a sort of molecular orbital full potential method; Vienna Ab-initio Simulation Package (VASP), which is a sort of pseudo potential method. The fundamental mixed orbital structure in each energy level near the Fermi level was investigated with simple model using DV-Xa. The optimized crystal structures calculated by VASP were compared to the measured structures. The density of state and the energy levels of dopant elements were shown and discussed in association with properties.

Electronic Structures of a Macrocyclic Fulleropyrrolidine

  • 황선구;이종명;전일철
    • Bulletin of the Korean Chemical Society
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    • v.17 no.12
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    • pp.1112-1117
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    • 1996
  • The electronic structures of twenty-seven isomers of a macrocyclic fulleropyrrolidine are investigated with semi-empirical extended Huckel (EH) molecular orbital method. The geometry of each isomer is determined by the molecular mechanics and dynamics methods based on UFF (universal force field) empirical force field. The calculated geometries, such as the carbon-carbon distances of the fullerene moiety, are in good agreement with those of related fullerene derivatives. The EH calculation shows that the formation of macrocyclic pyrrolidine ring on fullerene moiety results in the reduction of the HOMO-LUMO energy gap. From the graphical analysis of the DOS (density of states), PDOS (projected DOS), and MOOP (molecular orbital overlap population) curves, we can find that this reduction is due to splitting of the HOMO of fullerene moiety, which results from the symmetry-breaking and the distortion of the buckminsterfullerene framework from its ideal icosahedral structure.

Creating Structure with Pymatgen Package and Application to the First-Principles Calculation (Pymatgen 패키지를 이용한 구조 생성 및 제일원리계산에의 적용)

  • Lee, Dae-Hyung;Seo, Dong-Hwa
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.6
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    • pp.556-561
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    • 2022
  • Computational material science as an application of Density Functional Theory (DFT) to the discipline of material science has emerged and applied to the research and development of energy materials and electronic materials such as semiconductor. However, there are a few difficulties, such as generating input files for various types of materials in both the same calculating condition and appropriate parameters, which is essential in comparing results of DFT calculation in the right way. In this tutorial status report, we will introduce how to create crystal structures and to prepare input files automatically for the Vienna Ab initio Simulation Package (VASP) and Gaussian, the most popular DFT calculation programs. We anticipate this tutorial makes DFT calculation easier for the ones who are not experts on DFT programs.