• Title/Summary/Keyword: electronic structures

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First-principles Investigation on Fundamental Magnetism and Electronic Structures of α-Mn

  • Yun, Won Seok;Lee, Jee Yong;Kim, In Gee
    • Proceedings of the Korean Magnestics Society Conference
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    • 2012.11a
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    • pp.117-118
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    • 2012

  • In this study, the magnetic and electronic properties of ${\alpha}-Mn$ have been investigated using the all-electron FLAPW method based on the GGA. The local magnetic moment of Mn atoms are consistent with previously calculated results. Detailed discussion on the structural, magnetic, and electronic properties of ${\alpha}-Mn$ will be given.

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Elastic and Electronic Properties of Point Defects in Titanium Carbide

  • Kang, Dae-Bok
    • Journal of the Korean Chemical Society
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    • v.57 no.6
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    • pp.677-683
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    • 2013

  • A theoretical study of the electronic structures of $TiC_{1-x}$ and $Ti_{1-x}W_xC$ (x = 0, 0.25) is presented. The density of states and crystal orbital overlap population calculations were used to interpret variations of elastic properties induced by carbon vacancies and alloying substitutions. Our results show why the introduction of vacancies into TiC reduces bulk moduli, while W substitution at a Ti site increases the elastic modulus. The effect of the point defects on the bonding in TiC is investigated by means of extended Huckel tight-binding band calculations.

  • https://doi.org/10.5012/jkcs.2013.57.6.677 인용 PDF KSCI KPUBS HTML

New possibilities of SHS for producing high-temperature materials

  • Natalya, Korobova;Soh, Dea-Wha
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.399-400
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    • 2005

  • Self-propagating High-temperature Synthesised (SHS) ceramics have been widely used for various electronic applications. The investigation on SHS materials has been reported. The purposes of this study were as follows: fabricating the high-temperature functional materials, and evaluating crystal structure and electrical properties. The regularities and peculiarities in SHS structures of high-temperature materials as a result of the molecular interactions during burning process are considered.

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SEG Applications for Semiconductor Devices (선택적 단결정 실리콘 성장의 반도체 소자 적용)

  • Cheong, Woo-Seok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.9-10
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    • 2005

  • Process diagrams of selective epitaxial growth of silicon(SEG) could be developed from CVD thermodynamics. They could not only be helpful with understanding of the mechanism, but also offer good processing guidelines in manufacturing high density devices. Through the process optimization skill, applications of SEG to high-density device structures could be possible without problems such as loading effect and facet generation, with producing outstanding electronic properties.

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