• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2012.10a
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• pp.119-120
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• 2012

The International Hydrographic Organization (IHO) developed S-100 standards as a framework for a variety of data and service for hydrography and a standard research is in process, including a next-generation electronic chart standard, for products and services based on this.The need for standard storage and utilization of navigation routes generated by ECDIS and navigation system using navigation planning features has emerged and a standard research based on S-100 standard has been performed. Route information standard is needed for interoperability among route information generated by a variety of navigation system and requires an examination for the possibility of applicability. In this research, route generation tools and standard-based generation and result of route information using these tools in order to examine the application of route information standards have been executed.In details, first, as a module capable of generating route information, a module that can store values in memory based on route information standards of S-100, second, a module that can store route information in the memory in XML form, third, it includes loading module for route information stored as XML.In this research, we verified normal generation of route information, storage of generated route information and loading functions through developing three modules.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.71-71
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• 2009

전자제품의 다양한 기능들의 융복합화 및 휴대 편의성 경향은 이제 더 이상 새로운 것이 아니다. 이러한 추세에 따라 전자부품들은 모듈화 되고, 휴대하기 용이해 지고 있다. 또한 다양한 제품 디자인에 적용하기 위해 제품에 장착되는 부품의 기구적 위치 배열의 한계 또한 제약 받고 있다. 따라서 최근의 전자부품은 모듈화 되고 있으며, 기구적 한계를 극복하기 위한 Flexible 모듈의 사용이 증가하고 있다. 또한 양산측면에서 Roll-to-Roll(R2R) 방식을 적용함으로써 생산성을 극대화 하고 있다. 이때 R2R 적용을 위해서는 제품이 굴곡 될 수 있도록 유연성이 보장되는 Bendable 전자모듈의 개발이 필수적으로 요구되고 있다. Flexible 기판은 더 이상 새로운 기술이 아니지만, Felxible 기판 내부에 칩이 내장되고, 회로가 형성되어 자체적으로 기능을 수행할 수 있도록 한 Bendable 전자모듈을 R2R 방식으로 제조하는 기술은 매우 새로운 접근이라 할 수 있다. 이러한 기술개발이 현실화 된다면, Wearable Electronics 및 Flexible Display 등 다양한 전자제품에 응용될 수 있을 것으로 기대된다. 그러나 이러한 제품의 상용화를 위해서는 Bendable 전자모듈에 대한 신뢰성이 확보되고, 제품으로써의 수명이 보증되어야 한다. 신규 개발되는 제품의 신뢰성 검증항목이나 수명평가 모델은 현재까지 제안되지 않고 있는 실정이다. 또한 다양한 사용 환경에서 고장(Failure) 발생을 유발하는 스트레스 인자(Stress Factor)를 도출함으로써, 가속시험 또는 신뢰성 검증을 위한 인가 스트레스를 선정할 수 있다. 그러나 이러한 고장물리를 기반으로 스트레스 인자를 해석한 결과는 아직 보고되고 있지 않다. 따라서 본 연구에서는 $50{\mu}m$ 두께의 Si Chip에 저항변화를 관찰하기 위한 회로를 형성한 후 폴리이미드 기판을 이용하여 Si Chip이 임베딩된 Bendable 전자모듈을 제작하였다. 전자모듈의 실사용 환경에서의 수명예측을 위한 사전단계로써 고장물리에 기반한 고장모드와 고장메카니즘을 해석하는 것이 최우선 수행되어야 하며, 이를 바탕으로 고장을 유발하는 스트레스 인자를 도출 하였다. 고장도출을 위해 시제품은 JEDEC J-STD-020C의 MSL시험, 고온가압시험, 열충격시험 및 고온저장시험을 각각 수행하였으며, 이로부터 발생된 각각의 고장유형을 분석함으로써 스트레스 인자를 도출하였다. 또한 모아레(Moire) 간섭계를 이용하여 제작된 샘플의 온도변화에 따른 변형해석을 수행하였고, 동시에 Half Symetry Model을 이용한 유한요소해석(FEA)을 수행하여 변형해석 및 스트레스 유발원인을 도출하였다. 이 결과로 부터 고장물리 기반의 고장해석과 Moire 분석 그리고 시뮬레이션 해석 결과를 바탕으로 Bendable 전자모듈의 고장유발 스트레스 인자를 해석할 수 있었다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.10a
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• pp.599-601
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• 2009

In currently being adopted as a e-leaning standard, SCORM it is difficult to provide the customized contents to a learner by changing the learner's level at runtime, and to control selective studying. So, we designed and implemented the customized contents organization engine(CCOE) in order to complement SCORM's faults in this paper. The CCOE consists of a level evaluation module, a contents re-organization module and a question item selection module. A level evaluation module evaluates the learner's level based on a question item reaction theory. And a question item selection module selects some random items by each level or by considering the learner's level which is then provided to a studying before evaluation, a section evaluation, and a quiz. And then this module transmits the selected items to the contents reorganization module for providing the quiz. A contents re-organization module selects the customized contents based on the learner's level by searching the tagged difficulty to the content, and creates the sequence with the selected items and the transmitted items from the question item selection module. If proposed in this paper CCOE is applied, the higher effectiveness of learning is expected by providing the customized learning contents based on the re-evaluated learner's level by each section.

• Proceedings of the Korea Water Resources Association Conference
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• 2019.05a
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• pp.203-203
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• 2019

도시화로 인한 불투수면의 증가는 물순환 왜곡, 비점오염원 발생 및 수생태계 건상성 훼손 등을 야기시키며, 이를 해결하기 위하여 다양한 LID 기법을 적용하고 있다. 일반적으로 LID 내 적용 되는 여재들은 무기성여재로 중량이 크고 미세공극의 부재로 물리화학적 및 생물학적 저감기능이 제한적이다. 따라서 본 연구에서는 중량성이 낮은 생물폐자원을 선정하여 LID 시설 적용성평가를 수행하고자 한다. 생물폐자원은 발생량, 경량성 및 용이성을 고려하여 꼬막껍질(CS)과 호두껍질(WS)을 선정하였다. 생물폐자원의 산화부식을 고려하여 무기성 여재인 화산석과 혼합하여 Bioretention 시설에 적용하였으며, 여재 혼합비율에 따라 총 3가지의 Case 로 구성하였다. 식생은 구절초와 꽃댕강나무를 식재하였으며, 여재의 물리적 특성 분석을 위하여 적용 전과 후의 SEM(Scanning Electronic Microscope)을 수행하였다. 모니터링은 도로퇴적물 100g과 물 110L를 제조하여 인공강우유출수를 이용하여 수행하였으며, $0.0003{\sim}0.007m^3/sec$의 유속으로 주입하였다. 시설의 유입 및 유출부에서 유량 측정 및 수질 시료를 채취하였으며, 채취된 시료는 수질오염공정 시험법에 준하여 입자상 물질, 유기물, 영양물질 및 중금속 등을 분석하였다. Bioretention 시설의 모니터링 결과를 이용하여 물수지 및 TSS 저감 효율을 산정하였으며. 물수지 분석결과 시설의 저류율은 Case 1(soil) > Case 3(WS+RV) > Case 2(CS+RV) 순으로 나타났다. 시설 내 공극률이 가장 낮았던 Case 1에서 저류율이 약 55%로 가장 높게 것으로 분석되었다. Case 3(WS+RV)은 Case 2(WS+RV)와 시설 내 공극률이 유사함에도 불구하고 저류율이 약 10% 높은 것으로 분석되었다. 오염물질 저감효율 분석 결과, TSS와 TP의 제거효율은 모든 Case에서 약 75% 이상으로 높게 나타났으며, COD의 경우 모래를 적용한 Case 1에 비해 생물폐자원인 꼬막껍질과 호두껍질을 적용한 Case에서 약 1.3배 이상 높게 나타났다. 호두껍질과 꼬막껍질의 SEM 분석 결과 표면에 다공성이 형성되어 있는 것으로 조사되었다. 이는 여과 및 저류기작으로 인한 물순환 효과증대와 다공성과 돌기사이로 인한 입자상의 물질 여과 및 흡착으로 인하여 오염물질의 제거효율이 증대 된 것으로 평가된다. LID시설 내 생물폐자원과 무기성여재를 적절히 배합하여 복합여재로 조성할 경우 침하현상을 방지할 뿐만 아니라 저류 및 침투기능 향상과 미생물의 서식환경을 제공하기에 물순환 회복 및 비점오염물질 저감에 기여할 것으로 평가된다.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.75-87
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• 1996

This review is presented under the following headings: 1.Introduction 1.1 Brief review of the properties of AlN 1.2 Historical survey of work on ceramic and single crystal AlN 2.Thermochemical background 3.Crystal growth 4.Doping 5.Potential applications and future work The known properties of AlN which make it of interest for various are discussed briefly. The properties include chemical stability, crystal structure and lattice constants, refractive indices and other optical properties, dielectric constant, surface acoustic wave velocity and thermal conductivity. The history of work in single crystals, thin films and ceramics are outlined and the thermochemistry of AlN reviewed together with some of the relevant properties of aluminium and nitrogen; the problems encountered in growing crystals of AlN are shown to arise directly from these thermochemical relationships. Methods have been reported in the literature for growing AlN crystals from melts, solution and vapour and these methods are compared critically. It is proposed that the only practicable approach to the growth of AlN is by vapour phase methods. All vapour based procedures share the share the same problems: $.$the difficulty of preventing contamination by oxygen & carbon $.$the high bond energy of molecular nitrogen $.$the refractory nature of AlN (melting point~3073K at 100ats.) $.$the high reactivity of Al at high temperatures It is shown that the growth of epitactic layers and polycrystalline layers present additional problems: $.$chemical incompatibility of substrates $.$crystallographic mismatch of substrates $.$thermal mismatch of substrates The result of all these problems is that there is no good substrate material for the growth of AlN layers. Organometallic precursors which contain an Al-N bond have been used recently to deposit AlN layers but organometallic precursors gave the disadvantage of giving significant carbon contamination. Organometallic precursors which contain an Al-N bound have been used recently to deposit AlN layers but organometallic precursors have the disadvantage of giving significant carbon contamination. It is conclude that progress in the application of AlN to optical and electronic devices will be made only if considerable effort is devoted to the growth of larges, pure (and particularly, oxygen-free) crystals. Progress in applications of epi-layers and ceramic AlN would almost certainly be assisted also by the availability of more reliable data on the pure material. The essential features of any stategy for the growth of AlN from the vapour are outlined and discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.174-174
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• 2000

A strong antiferromagnetic coupling in Fe/Si multilayered films (MLF) had been recently discovered and much consideration has been given to whether the coupling in the Fe/Si MLF system has the same origin as the metal/metal MLF. Nevertheless, the nature of the interfacial ron silicide is still controversial. On one hand, a metal/ semiconductor structure was suggested with a narrow band-gap semiconducting $\varepsilon$-FeSi spacer that mediates the coupling. However, some features show that the nature of coupling can be well understood in terms of the conventional metal/metal multilayered system. It is well known that both magneto-optical (MO) and optical properties of a metal depend strongly on their electronic structure that is also correlated with the atomic and chemical ordering. In this study, the nature of the interfacial regions is the Fe/Si multilayers has been investigated by the experimental and computer-simulated MO and optical spectroscopies. The Fe/Si MLF were prepared by rf-sputtering onto glass substrates at room temperature with the number of repetition N=50. The thickness of Fe sublayer was fixed at 3.0nm while the Si sublayer thickness was varied from 1.0 to 2.0 nm. The topmost layer of all the Fe/Si MLF is Fe. In order to carry out the computer simulations, the information on the MO and optical parameters of the materials that may constitute a real multilayered structure should be known in advance. For this purpose, we also prepared Fe, Si, FeSi2 and FeSi samples. The structural characterization of Fe/Si MLF was performed by low- and high -angle x-ray diffraction with a Cu-K$\alpha$ radiation and by transmission electron microscopy. A bulk $\varepsilon$-FeSi was also investigated. The MO and optical properties were measured at room temperature in the 1.0-4.7 eV energy range. The theoretical simulations of MO and optical properties for the Fe/Si MLF were performed by solving exactly a multireflection problem using the scattering matrix approach assuming various stoichiometries of a nonmagnetic spacer separating the antiferromagnetically coupled Fe layers. The simulated spectra of a model structure of FeSi2 or $\varepsilon$-FeSi as the spacer turned out to fail in explaining the experimental spectra of the Fe/Si MLF in both intensity and shape. Thus, the decisive disagreement between experimental and simulated MO and optical properties ruled out the hypothesis of FeSi2 and $\varepsilon$-FeSi as the nonmagnetic spacer. By supposing the spontaneous formation of a metallic ζ-FeSi, a reasonable agreement between experimental and simulated MO and optical spectra was obtained.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.292-292
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• 2016

Transition metal dichalcogenides (TMDs) with a two-dimensional layered structure have been considered highly promising materials for next-generation flexible, wearable, stretchable and transparent devices due to their unique physical, electrical and optical properties. Recent studies on TMD devices have focused on developing a suitable doping technique because precise control of the threshold voltage ($V_{TH}$) and the number of tightly-bound trions are required to achieve high performance electronic and optoelectronic devices, respectively. In particular, it is critical to develop an ultra-low level doping technique for the proper design and optimization of TMD-based devices because high level doping (about $10^{12}cm^{-2}$) causes TMD to act as a near-metallic layer. However, it is difficult to apply an ion implantation technique to TMD materials due to crystal damage that occurs during the implantation process. Although safe doping techniques have recently been developed, most of the previous TMD doping techniques presented very high doping levels of ${\sim}10^{12}cm^{-2}$. Recently, low-level n- and p-doping of TMD materials was achieved using cesium carbonate ($Cs_2CO_3$), octadecyltrichlorosilane (OTS), and M-DNA, but further studies are needed to reduce the doping level down to an intrinsic level. Here, we propose a novel DNA-based doping method on $MoS_2$ and $WSe_2$ films, which enables ultra-low n- and p-doping control and allows for proper adjustments in device performance. This is achieved by selecting and/or combining different types of divalent metal and trivalent lanthanide (Ln) ions on DNA nanostructures. The available n-doping range (${\Delta}n$) on the $MoS_2$ by Ln-DNA (DNA functionalized by trivalent Ln ions) is between $6{\times}10^9cm^{-2}$ and $2.6{\times}10^{10}cm^{-2}$, which is even lower than that provided by pristine DNA (${\sim}6.4{\times}10^{10}cm^{-2}$). The p-doping change (${\Delta}p$) on $WSe_2$ by Ln-DNA is adjusted between $-1.0{\times}10^{10}cm^{-2}$ and $-2.4{\times}10^{10}cm^{-2}$. In the case of Co-DNA (DNA functionalized by both divalent metal and trivalent Ln ions) doping where $Eu^{3+}$ or $Gd^{3+}$ ions were incorporated, a light p-doping phenomenon is observed on $MoS_2$ and $WSe_2$ (respectively, negative ${\Delta}n$ below $-9{\times}10^9cm^{-2}$ and positive ${\Delta}p$ above $1.4{\times}10^{10}cm^{-2}$) because the added $Cu^{2+}$ ions probably reduce the strength of negative charges in Ln-DNA. However, a light n-doping phenomenon (positive ${\Delta}n$ above $10^{10}cm^{-2}$ and negative ${\Delta}p$ below $-1.1{\times}10^{10}cm^{-2}$) occurs in the TMD devices doped by Co-DNA with $Tb^{3+}$ or $Er^{3+}$ ions. A significant (factor of ~5) increase in field-effect mobility is also observed on the $MoS_2$ and $WSe_2$ devices, which are, respectively, doped by $Tb^{3+}$-based Co-DNA (n-doping) and $Gd^{3+}$-based Co-DNA (p-doping), due to the reduction of effective electron and hole barrier heights after the doping. In terms of optoelectronic device performance (photoresponsivity and detectivity), the $Tb^{3+}$ or $Er^{3+}$-Co-DNA (n-doping) and the $Eu^{3+}$ or $Gd^{3+}$-Co-DNA (p-doping) improve the $MoS_2$ and $WSe_2$ photodetectors, respectively.

• Proceedings of the Korean Journal of Food and Nutrition Conference
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• 2001.12a
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• pp.39-74
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• 2001

The endeavors enhancing the grain quality of high-yielding japonica rice were steadily continued during 1980s∼1990s along with the self-sufficiency of rice production and the increasing demands of high-quality rices. During this time, considerably great, progress and success was obtained in development of high-quality japonica cultivars and qualify evaluation techniques including the elucidation of interrelationship between the physicochemical properties of rice grain and the physical or palatability components of cooked rice. In 1990s, some high-quality japonica rice caltivars and special rices adaptable for food processing such as large kernel, chalky endosperm aromatic and colored rices were developed and its objective preference and utility was also examined by a palatability meter, rapid-visco analyzer and texture analyzer. The water uptake rate and the maximum water absorption ratio showed significantly negative correlations with the K/Mg ratio and alkali digestion value(ADV) of milled rice. The rice materials showing the higher amount of hot water absorption exhibited the larger volume expansion of cooked rice. The harder rices with lower moisture content revealed the higher rate of water uptake at twenty minutes after soaking and the higher ratio of maximum water uptake under the room temperature condition. These water uptake characteristics were not associated with the protein and amylose contents of milled rice and the palatability of cooked rice. The water/rice ratio (in w/w basis) for optimum cooking was averaged to 1.52 in dry milled rices (12% wet basis) with varietal range from 1.45 to 1.61 and the expansion ratio of milled rice after proper boiling was average to 2.63(in v/v basis). The major physicochemical components of rice grain associated with the palatability of cooked rice were examined using japonica rice materials showing narrow varietal variation in grain size and shape, alkali digestibility, gel consistency, amylose and protein contents, but considerable difference in appearance and torture of cooked rice. The glossiness or gross palatability score of cooked rice were closely associated with the peak. hot paste and consistency viscosities of viscogram with year difference. The high-quality rice variety “Ilpumbyeo” showed less portion of amylose on the outer layer of milled rice grain and less and slower change in iodine blue value of extracted paste during twenty minutes of boiling. This highly palatable rice also exhibited very fine net structure in outer layer and fine-spongy and well-swollen shape of gelatinized starch granules in inner layer and core of cooked rice kernel compared with the poor palatable rice through image of scanning electronic mcroscope. Gross sensory score of cooked rice could be estimated by multiple linear regression formula, deduced from relationship between rice quality components mentioned above and eating quality of cooked rice, with high Probability of determination. The ${\alpha}$ -amylose-iodine method was adopted for checking the varietal difference in retrogradation of cooked rice. The rice cultivars revealing the relatively slow retrogradation in aged cooked rice were Ilpumbyeo, Chucheongbyeo, Sasanishiki, Jinbubyeo and Koshihikari. A Tongil-type rice, Taebaegbyeo, and a japonica cultivar, Seomjinbyeo, shelved the relatively fast deterioration of cooked rice. Generally, the better rice cultivars in eating quality of cooked rice showed less retrogiadation and much sponginess in cooled cooked rice. Also, the rice varieties exhibiting less retrogradation in cooled cooked rice revealed higher hot viscosity and lower cool viscosity of rice flour in amylogram. The sponginess of cooled cooked rice was closely associated with magnesium content and volume expansion of cooked rice. The hardness-changed ratio of cooked rice by cooling was negatively correlated with solids amount extracted during boiling and volume expansion of cooked rice. The major physicochemical properties of rice grain closely related to the palatability of cooked rice may be directly or indirectly associated with the retrogradation characteristics of cooked rice. The softer gel consistency and lower amylose content in milled rice revealed the higher ratio of popped rice and larger bulk density of popping. The stronger hardness of rice grain showed relatively higher ratio of popping and the more chalky or less translucent rice exhibited the lower ratio of intact popped brown rice. The potassium and magnesium contents of milled rice were negatively associated with gross score of noodle making mixed with wheat flour in half and the better rice for noodle making revealed relatively less amount of solid extraction during boiling. The more volume expansion of batters for making brown rice bread resulted the better loaf formation and more springiness in rice bread. The higher protein rices produced relatively the more moist white rice bread. The springiness of rice bread was also significantly correlated with high amylose content and hard gel consistency. The completely chalky and large gram rices showed better suitability for fermentation and brewing. Our breeding efforts on rice quality improvement for the future should focus on enhancement of palatability of cooked rice and marketing qualify as well as the diversification in morphological and physicochemical characteristics of rice grain for various value-added rice food processings.

• Proceedings of the KOSOMBE Conference
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• v.1992 no.05
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• pp.27-47
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• 1992

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