• Title/Summary/Keyword: electron transport layer

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Work Function Modification of Indium Tin Oxide Thin Films Sputtered on Silicon Substrate

  • Oh, Gyujin;Kim, Eun Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.351.2-351.2
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    • 2014
  • Indium tin oxide (ITO) has a lot of variations of its properties because it is basically in an amorphous state. Therefore, the differences in composition ratio of ITO can result in alteration of electrical properties. Normally, ITO is considered as transparent conductive oxide (TCO), possessing excellent properties for the optical and electrical devices. Quantitatively, TCO has transparency over 80 percent within the range of 380nm to 780nm, which is visible light although its specific resistance is less than $10-3{\Omega}/cm$. Thus, the solar cell is the best example for which ITO has perfectly matching profile. In addition, when ITO is used as transparent conductive electrode, this material essentially has to have a proper work function with contact materials. For instance, heterojunction with intrinsic thin layer (HIT) solar cell could have both front ITO and backside ITO. Because each side of ITO films has different type of contact materials, p-type amorphous silicon and n-type amorphous silicon, work function of ITO has to be modified to transport carrier with low built-in potential and Schottky barrier, and approximately requires variation from 3 eV to 5 eV. In this study, we examine the change of work function for different sputtering conditions using ultraviolet photoelectron spectroscopy (UPS). Structure of ITO films was investigated by spectroscopic ellipsometry (SE) and scanning electron microscopy (SEM). Optical transmittance of the films was evaluated by using an ultraviolet-visible (UV-Vis) spectrophotometer

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Heteroepitaxial Structure of ZnO Films Deposited on Graphene, $SiO_2$ and Si Substrates

  • Pak, Sang-Woo;Cho, Seong-Gook;Kim, Eun-Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.309-309
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    • 2012
  • Heteroepitaxial growth remains as one of the continuously growing interests, because the heterogeneous crystallization on different substrates is a common feature in the fabrication processes of many semiconductor materials and devices, such as molecular beam epitaxy, pulsed laser deposition, sputtering, chemical bath deposition, chemical vapor deposition, hydrothermal synthesis, vapor phase transport and so on [1,2]. By using the R.F. sputtering system, ZnO thin films were deposited on graphene 4 and 6 mono layers, which is grown on 400 nm and 600 nm $SiO_2$ substrates, respectively. The ZnO thin layer was deposited at various temperatures by using a ZnO target. In this experimental, the working power and pressure were $3{\times}10^{-3}$ Torr and 50 W, respectively. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen and argon gas flows were controlled around 5 and 10 sccm by using a mass flow controller system, respectively. The structural properties of the samples were analyzed by XRD measurement. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system. The surface morphologies were observed using field emission scanning electron microscope (FE-SEM).

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High-Density Quantum Nanostructure for Single Mode Distributed Feedback Semiconductor Lasers by One-Step Growth (단일 공정에 의한 고효율 단일모드 반도체 레이저 구조 제작을 위한 고밀도 양자 나노구조 형성)

  • Son, Chang-Sik;Baek, Jong-Hyeob;Kim, Seong-Il;Park, Young-Ju;Kim, Yong-Tae;Choi, Hoon-Sang;Choi, In-Hoon
    • Korean Journal of Materials Research
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    • v.13 no.8
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    • pp.485-490
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    • 2003
  • We have developed a new way of the constant growth technique to maintain a grating height of originally-etched V-groove of submicron gratings up to 1.5 $\mu\textrm{m}$ thickness by a low pressure metalorganic chemical vapor deposition. The constant growth technique is well performed on two kinds of submicron gratings that made by holography and electron (e)-beam lithography GaAs buffer layer grown on thermally deformed submicron gratings has an important role in recovering the deformed grating profile from sinusoidal to V-shaped by reducing mass transport effects. The thermal deformation effect on submicron gratings made by e-beam lithography is less than that on submicron gratings made by holography. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystals.

Coating Property of Hybrid Structured Photo-Electrode to Increase Dye-Sensitized Solar Cells Efficiency (염료감응형 태양전지의 효율 향상을 위한 하이브리드 구조 광전극의 코팅특성)

  • Kim, Min-Hee;Lee, Hyung-Woo;Jeong, Young-Keun
    • Journal of Powder Materials
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    • v.17 no.6
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    • pp.449-455
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    • 2010
  • The hybrid structured photo-electrode for dye-sensitized solar cells was fabricated based on the composites of $TiO_2$ nanoparticles and nanowires. Three samples with different hybrid structures were prepared with 17 vol%, 43 vol%, and 100 vol% nanowires. The energy conversion efficiency was enhanced from 5.54% for pure nanoparticle cells to 6.01% for the hybrid structure with 17 vol% nanowires. For the hybrid structured layers with high nanowires concentration (43 vol% and 100 vol%), the efficiency decreased with the nanowire concentration, because of the decrease of specific surface area, and of thus decreased current density. The random orientations of $TiO_2$ nanowires can be preserved by the doctor blade process, resulted in the enhanced efficiency. The hybrid structured $TiO_2$ layer can possess the advantages of the high surface area of nanoparticles and the rapid electron transport rate and the light scattering effect of nanowires.

Photovoltaic Effects in Organic Semiconductor $CuPc/C_{60}$ depending on Cathodes ($CuPc/C_{60}$ 구조 유기 반도체에서의 음전극의 종류에 따른 광기전 효과 연구)

  • Oh, Hyun-Seok;Jang, Kyung-Wook;Lee, Sung-Ill;Lee, Joon-Ung;Kim, Tae-Wan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.181-184
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    • 2004
  • Organic semiconductors have attracted considerable attention due to their interesting physical properties followed by various technological applications in the area of electronics and opto-electronics. It has been a long time since organic solar cells were expected as a low-cost high-energy conversion device. Although practical use of them has not been achieved, technological progress continues. Morphology of the materials, organic/inorganic interface, metal cathodes, molecular packing and structural properties of the donor and acceptor layers are essential for photovoltaic response. We have fabricated solar-cell devices based on copper-phthalocyanine(CuPc) as a donor(D) and fullerene($C_{60}$) as an electron acceptor(A) with doped charge transport layers, and BCP as an exciton blocking layer(EBL). We have measured photovoltaic characteristics of the solar-cell devices using the xenon lamp as a light source.

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Plant Growth Promotion in Soil by Some Inoculated Microorganisms

  • Jeon, Jong-Soo;Lee, Sang-Soo;Kim, Hyoun-Young;Ahn, Tae-Seok;Song, Hong-Gyu
    • Journal of Microbiology
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    • v.41 no.4
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    • pp.271-276
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    • 2003
  • The inoculation of some microorganisms into a microcosm containing soil from a barren lakeside area at Lake Paro in Kangwon-do enhanced plant growth significantly. The direct and viable counts of soil bacteria and soil microbial activities measured by electron transport system assay and fluorescein diacetate hydrolysis assay were higher in inoculated soil. The plant growth promoting effect of this inoculation may be caused by phytohormone production and the solubilization of insoluble phosphates by the inoculated bacteria. Three inoculated strains of Pseudomonas fluorescens produced several plant growth promoting phytohormones, including indole-3-acetic acid (auxin), which was confirmed by thin layer chromatography and GC/MS. P. fluorescens strain B16 and M45 produced 502.4 and 206.1 mg/l of soluble phosphate from Ca3(PO4)2 and hydroxyapatite, respectively. Bacillus megaterium showed similar solubilization rates of insoluble phosphates to those of Pseudomonas spp. We believe that this plant growth promoting capability may be used for the rapid revegetation of barren or disturbed land.

Assessment on Recovery of Cesium, Strontium, and Barium From Eutectic LiCl-KCl Salt With Liquid Bismuth System

  • Woods, Michael E.;Phongikaroon, Supathorn
    • Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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    • v.18 no.4
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    • pp.421-437
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    • 2020
  • This study provides an assessment on a proposed method for separation of cesium, strontium, and barium using electrochemical reduction at a liquid bismuth cathode in LiCl-KCl eutectic salt, investigated via cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and scanning electron microscopy with energy dispersive X-ray spectrometry (SEM-EDS). CV studies were performed at temperatures of 723-823 K and concentrations of the target species up to 4.0wt%. Redox reactions occurring during potential sweeps were observed. Concentration of BaCl2 in the salt did not seem to influence the diffusivity in the studied concentration range up to 4.0wt%. The presence of strontium in the system affected the redox reaction of lithium; however, there were no distinguishable redox peaks that could be measured. Impedance spectra obtained from EIS methods were used to calculate the exchange current densities of the electroactive active redox couple at the bismuth cathode. Results show the rate-controlling step in deposition to be the mass transport of Cs+ ions from the bulk salt to the cathode surface layer. Results from SEM-EDS suggest that Cs-Bi and Sr-Bi intermetallics from LiCl-KCl salt are not thermodynamically favorable.

SI-BASED MAGNETIC TUNNELING TRANSISTOR WITH HIGH TRANSFER RATIO

  • S. H. Jang;Lee, J. H.;T. Kang;Kim, K. Y.
    • Proceedings of the Korean Magnestics Society Conference
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    • 2003.06a
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    • pp.24-24
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    • 2003
  • Metallic magnetoelectronic devices have studied intensively and extensively for last decade because of the scientific interest as well as great technological importance. Recently, the scientific activity in spintronics field is extending to the hybrid devices using ferromagnetic/semiconductor heterostructures and to new ferromagnetic semiconductor materials for future devices. In case of the hybrid device, conductivity mismatch problem for metal/semiconductor interface will be able to circumvent when the device operates in ballistic regime. In this respect, spin-valve transistor, first reported by Monsma, is based on spin dependent transport of hot electrons rather than electron near the Fermi energy. Although the spin-valve transistor showed large magnetocurrent ratio more than 300%, but low transfer ratio of the order of 10$\^$-5/ prevents the potential applications. In order to enhance the collector current, we have prepared magnetic tunneling transistor (MTT) with single ferromagnetic base on Si(100) collector by magnetron sputtering process. We have changed the resistance of tunneling emitter and the thickness of baser layer in the MTT structure to increase collector current. The high transfer ratio of 10$\^$-4/ range at bias voltage of more than 1.8 V, collector current of near l ${\mu}$A, and magnetocurrent ratio or 55% in Si-based MTT are obtained at 77K. These results suggest a promising candidate for future spintronic applications.

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Visible Light-Driven $CuInS_2-TiO_2$ Nanotube Composite Photoelectrodes with Heterojunction Structureusing Pulsed-Electrochemical Deposition Process (Pulse 전위를 적용한 전기화학적 증착 공정으로 제조된 가시광 활성 이종접합 $CuInS_2-TiO_2$ Nanotube 화합물 광전극)

  • Yun, Jung-Ho;Amal, Rose;Park, Young-Koo
    • Journal of the Korean Applied Science and Technology
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    • v.30 no.1
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    • pp.49-56
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    • 2013
  • Excellent electron transport properties with enhanced light scattering ability for light harvesting have made well-ordered one dimensional $TiO_2$ nanotube(TNT) arrays an alternative candidate over $TiO_2$ nanoparticles in the area of solar energy conversion applications. The principal drawback of TNT arrays being activated only by UV light has been addressed by coupling the TNT with secondary materials which are visible light-triggered. As well as extending the absorption region of sunlight, the introduction of these foreign components is also found to influence the charge separation and electron lifetime of TNT. In this study, a novel method to fabricate the TNT-based composite photoelectrodes employing visible responsive $CuInS_2$ (CIS) nanoparticles is presented. The developed method is a square wave pulse-assisted electrochemical deposition approach to wrap the inner and outer walls of a TNT array with CIS nanoparticles. Instead of coating as a dense compact layer of CIS by a conventional non-pulsed-electrochemical deposition method, the nanoparticles pack relatively loosely to form a rough surface which increases the surface area of the composite and results in a higher degree of light scattering within the tubular channels and hence a greater chance of absorption. The excellence coverage of CIS on the tubular $TiO_2$ allows the construction of an effective heterojunction that exhibits enhanced photoelectrochemical performance.

Molecular Linker Enhanced Assembly of CdSe/ZnS Core-Shell Quantum Dots (분자 끈을 활용한 CdSe/ZnS 양자 점의 향상된 배열)

  • Cho, Geun Tae;Lee, Jong Hyeon;Nam, Hye Jin;Jung, Duk Young
    • Korean Chemical Engineering Research
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    • v.46 no.6
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    • pp.1081-1086
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    • 2008
  • QDs-LEDs(quantum dot light emitting device) should contain well-organized arrays of QDs on an electron transport layer. Thin films of CdSe/ZnS core-shell QDs were successfully fabricated on $TiO_2$ substrates by using PDMS stamp and micro contact printing method. 2-Carboxyethylphosphonic acid(CAPO) and 1,6-hexanedithiol(HDT) were employed as molecular linkers in assembling CdSe/ZnS core-shell QDs with high-density and uniform array. The CAPO increased the binding strength between the QDs and the substrates, and the HDT induced the strong inter-particle attractions of assembled QDs. The assembling properties of QDs thin films were characterized by SEM, AFM, optical microscope and photoluminescence spectroscope(PL).