• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.292-293
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• 2006

We have Investigated dielectric properties depending on bias voltage in organic lightemitting diodes using 8-hydroxyquinoline aluminum($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric properties of organic light emitting diodes using impedance characteristics measurement by the auto-balancing bridge technique and equivalent cirrcuit of ITO/$Alq_3$/Al. Impedance characteristics was measured complex impedance Z and phase ${\theta}$ in the frequency range of 40 [Hz] to $10^8$ [Hz]. We obtained complex electrical conductivity, dielectric constant, and loss tangent ($tan{\delta}$) of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.293-294
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• 2005

We have investigated dielectric properties depending on frequency in organic light -emitting diodes using 8-hydroxyquinoline aluminum ($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric properties of organic light-emitting diodes using impedance of characteristics. impedance characteristics was measured complex impedance Z and phase $\Theta$ in the frequency range of 40 Hz to $10^8$ Hz. We obtained complex electrical conductivity, dielectric constant, and loss tangent (tan$\delta$) of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.74-75
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• 2006

We have investigated dielectric properties depending on temperature in organic light-emitting diodes using 8-hydroxyquinoline aluminum ($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric properties of organic light-emitting diodes using characteristics of impedance. he Impedance characteristics was measured complex impedance Z and phase $\theta$ in the temperature range of 10 K to 300 K. We obtained complex electrical conductivity, dielectric constant and loss tangent ($tan{\delta}$) of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.299-302
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays. They are attractive because of multicolor emission low operation voltage. In this study, several Eu complexes such as Eu(TPB)$_3$(Phen) and Eu(TPB)$_3$(Bpy) were synthesized and the photoluminescence(PL) and electroluminescence (EL) characteristics of their thin films were investigated by fabricating the devices having a structure of glass substrate/ITO/TPD/Europium-complexs/Alq$_3$/Al, where aromatic diamine(TPD) was used as an hole transporting and Alq$_3$ was used as an electron transporting materials. It was found that the photoluminescence(PL) and electroluminescence(EL) characteristics of these Europium complexes were dependent upon the ligands coordinated to Europium metal. Details on the explanation of electrical transport phenomena of the structure with I-V characteristics of the OLEDs using the trapped-charge-limited current(TCLC) model will be discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.1027-1031
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• 2001

A new constant growth technique to conserve an initial grating height of V-groove AlGaAs/InGaAs quantum nanostructures above 1.0 $\mu\textrm{m}$ thickness has been successfully embodied on submicron gratings using low pressure metalorganic chemical vapor deposition. A GaAs buffer prior to an AlGaAs barrier layer on submicron gratings plays an important role in overcoming mass transport effects and improving the uniformity of gratings. Transmission electron microscopy (TEM) image shows that high-density V-groove InGaAs quantum wires (QWRs) are well confined at the bottom of gratings. The photoluminescence (PL) peak of the InGaAs QWRs is observed in the temperature range from 10 to 280 K with a relatively narrow full width at half maximum less than 40 meV at room temperature PL. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystal.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.68-68
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• 2018

Nanoporous or nanotubular metal oxide can be fabricated by anodization of metal substrate in fluoride contained electrolytes. The approach allows various transition metals such as Zr, Hf, Nb, Ta to form highly ordered oxide nanostructures. These oxide nanostructures have various advantages such as high surface area, fast electron transport rate and slow recombination in semiconductive materials. Recently, vanadium oxide nanostructures have been drawn attentions due to their superior electronic, catalytic and ion insertion properties. However, anodization of vanadium metal to form oxide layers is relatively difficult due to ease formation of highly soluble complex in water contained electrolyte during anodization. Yang et al. reported $[TiF_6]^{2-}$ or $[BF_4]^-$ in electrolyte helps to formation of stable oxide layer [1, 2]. However, the reported approaches are very sensitive in other parameters. In this presentation, we deal with the other important key parameters to form ordered anodic vanadium oxide such as pH, temperatures and applied potential.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.492-493
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• 2007

We have investigated Electrical Properties of Organic Light-Emitting Diode depending on Varied Temperature using 8-hydroxyquinoline aluminum($Alq_3$) as an electron transport and emissive material. We analyzed the electrical properties of organic light emitting diodes by impedance characteristics of ITO/$Alq_3$/Al. Impedance characteristics was measured complex impedance Z and phase e in the frequency range of 40 Hz to $10^7\;Hz$. From these analyses, we are able to interpret electrical Properties of OLED depending on temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.490-491
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• 2007

We have investigated dielectric dispersion and absorption in organic light-emitting diodes using 8-hydroxyquinoline aluminum($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric dispersion and absorption of organic light emitting diodes using impedance characteristics measurement by the auto-balancing bridge technique of ITO/$Alq_3$/Al. Impedance characteristics was measured complex impedance Z and phase e in the frequency range of 40Hz to $10^8Hz$. We obtained dielectric constant and loss tangent (tan $\delta$) of the device. From these analyses, we are able to interpret a dielectric dispersion and dielectric absorption contributed by an interfacial and orientational polarization.

• Journal of Plant Biology
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• v.28 no.1
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• pp.69-77
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• 1985

The degree of The degree of The degree of ${Zn}^{2+}$ effect on the photosynthetic electron transport and photophosphorylation activities in barley chloroplasts has been tested.${Zn}^{2+}$treatment was done in the 2 ways. One was that it was added into the chloroplasts suspensions isolated from the plants grown under the normal ${Zn}^{2+}$level (10$^{-6}$ M). The other was that the different concentrations of ${Zn}^{2+}$was applied in each growth medium. Then, it was not added into the chloroplasts suspensions isolated from the plants. PS II activity in both way of the treatments was more severely inhibited than PS I by the increment of ${Zn}^{2+}$ concentration. The photophosphorylation activity measured by pH measurement was gradually decreased with the increase of ${Zn}^{2+}$concentration in both ways, too. However, it was shown that M $n^{2+}$ could be near fully overcome the inhibitory effect of ${Zn}^{2+}$in PS II, and $Mg^{2+}$ could also reduce the Z $n^{2+}$ inhibition in the photophosphorylation. In the low concentrations of $Mg^{2+}$ (3 to 5$\times$10$^{-3}$ M) in the suspension, ${Zn}^{2+}$(2$\times$10$^{-5}$ M) could increase the activity of photophosphorylation. As compares to other cations, Z $n^{2+}$ caused less inhibitory effect on the photophosphorylation activity than Cu, Cd, but more than Pb and Ni. It may be assumed that a complex from reaction of Z $n^{2+}$ and mercaptoethanol was produced and it could reduce the stability of CPI band during SDS-PAGE.effect on the photosynthetic electron transport and photophosphorylation activities in barley chloroplasts has been tested. Z $n^{2+}$ treatment was done in the 2 ways. One was that it was added into the chloroplasts suspensions isolated from the plants grown under the normal Z $n^{2+}$ level (10$^{-6}$ M). The other was that the different concentrations of Z $n^{2+}$ was applied in each growth medium. Then, it was not added into the chloroplasts suspensions isolated from the plants. PS II activity in both way of the treatments was more severely inhibited than PS I by the increment of Z $n^{2+}$ concentration. The photophosphorylation activity measured by pH measurement was gradually decreased with the increase of Z $n^{2+}$ concentration in both ways, too. However, it was shown that M $n^{2+}$ could be near fully overcome the inhibitory effect of Z $n^{2+}$ in PS II, and $Mg^{2+}$ could also reduce the Z $n^{2+}$ inhibition in the photophosphorylation. In the low concentrations of $Mg^{2+}$ (3 to 5$\times$10$^{-3}$ M) in the suspension, Z $n^{2+}$ (2$\times$10$^{-5}$ M) could increase the activity of photophosphorylation. As compares to other cations, Z $n^{2+}$ caused less inhibitory effect on the photophosphorylation activity than Cu, Cd, but more than Pb and Ni. It may be assumed that a complex from reaction of Z $n^{2+}$ and mercaptoethanol was produced and it could reduce the stability of CPI band during SDS-PAGE.effect on the photosynthetic electron transport and photophosphorylation activities in barley chloroplasts has been tested. Z $n^{2+}$ treatment was done in the 2 ways. One was that it was added into the chloroplasts suspensions isolated from the plants grown under the normal Z $n^{2+}$ level (10$^{-6}$ M). The other was that the different concentrations of Z $n^{2+}$ was applied in each growth medium. Then, it was not added into the chloroplasts suspensions isolated from the plants. PS II activity in both way of the treatments was more severely inhibited than PS I by the increment of Z $n^{2+}$ concentration. The photophosphorylation activity measured by pH measurement was gradually decreased with the increase of Z $n^{2+}$ concentration in both ways, too. However, it was shown that M $n^{2+}$ could be near fully overcome the inhibitory effect of Z $n^{2+}$ in PS II, and $Mg^{2+}$ could also reduce the Z $n^{2+}$ inhibition in the photophosphorylation. In the low concentrations of $Mg^{2+}$ (3 to 5$\times$10$^{-3}$ M) in the suspension, Z $n^{2+}$ (2$\times$10$^{-5}$ M) could increase the activity of photophosphorylation. As compares to other cations, Z $n^{2+}$ caused less inhibitory effect on the photophosphorylation activity than Cu, Cd, but more than Pb and Ni. It may be assumed that a complex from reaction of Z $n^{2+}$ and mercaptoethanol was produced and it could reduce the stability of CPI band during SDS-PAGE.ld reduce the stability of CPI band during SDS-PAGE.

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.15-19
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• 2009

A high efficient organic red light emitting device with structure of DNTPD/TAPC/$Bebq_2$ :[$(pq)_2Ir(acac)$, SFC-411]/SFC-137 was fabricated on the plastic substrate, which can be applied in the fields of flexible display and illumination. In the device structure, N,N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolylamino)-phenyl]-biphenyl-4,4'-diamine[DNTPD] as a hole injection layer and 1,1-bis-(di-4-tolylaminophenyl) cyclohexane [TAPC] as a hole transport were used. Bis(10-hydroxybenzo[h]quinolinato) beryllium complex [$Bebq_2$] was used as a light emitting host material. The host material, $Bebq_2$ was doubly doped with volume ratio of 7% iridium(III)bis-(2-phenylquinoline)acetylacetonate[$(pq)_2$Ir(acac)] and 3% SFC-411[red phosphor dye coded by the proprietary company]. And then, SFC-137 was used as an electron transport layer. The luminous intensity and current efficiency of the fabricated device were $22,780\;cd/m^2$ at 9V and 17.3 cd/A under $10,000\;cd/m^2$, respectively. The maximum current efficiency of the device was 22.4cd/A under $580\;cd/m^2$.