• Journal of the Korean Magnetic Resonance Society
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• v.9 no.2
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• pp.155-162
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• 2005

The interaction of poly(ethylene glycol)(PEG) with cationic dodecyl trimethyl ammonium bromide (DTAB)micelle was studied with electron spin resonance (ESR) by determining line widths of the ESR spectra and coupling constant of nitrogen($A_N$). The degree of ESR line shape change such as line widths and coupling constant indicated that PEG mixes well with DTAB micelle due to a great hydrophobic interaction with surfactant alkyl chains. This suggests that the PEG can be used as non-ionic surfactant to disperse the exposed oil in the ocean.

• Journal of the Korean Magnetic Resonance Society
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• v.1 no.1
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• pp.59-70
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• 1997

The interaction of poly(ethylene glycol) (PEG) with cationic dodecyl trimethyl ammonium bromide (DTAB) micelle was studied with electron spin resonance (ESR) by determining line widths of ESR spectra and coupling constant of nitrogen(AN). The degree of ESR line shape change such as line widths and coupling constant indicated that PEG mixes well with DTAB micelle due to a great hydrophobic interaction with surfactant alkyl chains. This suggests that the PEG can be used as non-ionic surfactant to disperse the exposed oil in the ocean.

• Korean Journal of Materials Research
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• v.23 no.9
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• pp.517-524
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• 2013

The electrical and optical properties of fluorine-doped tin oxide films grown on polyethylene terephthalate film with a hardness of 3 using electron cyclotron resonance plasma with linear microwave of 2.45 GHz of high ionization energy were investigated. Fluorine-doped tin oxide films with a magnetic field of 875 Gauss and the highest resistance uniformity were obtained. In particular, the magnetic field could be controlled by varying the distribution in electron cyclotron deposition positions. The films were deposited at various gas flow rates of hydrogen and carrier gas of an organometallic source. The surface morphology, electrical resistivity, transmittance, and color in the visible range of the deposited film were examined using SEM, a four-point probe instrument, and a spectrophotometer. The electromagnetic field for electron cyclotron resonance condition was uniformly formed in at a position 16 cm from the center along the Z-axis. The plasma spatial distribution of magnetic current on the roll substrate surface in the film was considerably affected by the electron cyclotron systems. The relative resistance uniformity of electrical properties was obtained in film prepared with a magnetic field in the current range of 180~200A. SEM images showing the surface morphologies of a film deposited on PET with a width of 50 cm revealed that the grains were uniformly distributed with sizes in the range of 2~7 nm. In our experimental range, the electrical resistivity of film was able to observe from $1.0{\times}10^{-2}$ to $1.0{\times}10^{-1}{\Omega}cm$ where optical transmittance at 550 nm was 87~89 %. These properties were depended on the flow rate of the gas, hydrogen and carrier gas of the organometallic source, respectively.

• Proceedings of the Korean Magnetic Resonance Society Conference
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• 2000.08a
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• pp.41-41
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• 2000

• Journal of the Korean Magnetic Resonance Society
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• v.6 no.2
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• pp.113-117
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• 2002

The chalcogenide glass (ALS, $Al_2S_3-La_2S_3$) was prepared by melting a stoichiometric mixture of aluminum powder and $La_2S_3$ under $H_2S$ atmosphere at $1200{\circ}C$. Glasses containing 0.1-0.1% of $Mn^{2+},\;Gd^{3+}$ and $Cu^{2+}$ were also prepared. The characteristic features of the ESR spectra for the transition metal containing ALS glasses are interpreted.

• Journal of the Korean Magnetic Resonance Society
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• v.4 no.1
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• pp.50-63
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• 2000

Titanium dioxide particles with three different average sizes, prepared by three different methods, were incorporated into silica gel pores by impregnation. The titanium dioxide incorporated into the silica gel pores was photoionized by 240-400 nm irradiation at 77 K by a one-photon process to from trapped hole centers on OH group and trapped electron centers on titanium which were detected by electron paramagnetic resonance at 77 K. During the impregnation the smallest size range of TiO2 particles can be incorporated into silica gels with 2.5-1.5 nm pores. However, the largest size range of TiO2 particles can only be incorporated into silica gels with 6-15 nm pores and not into silica gels with 2.5-4 nm pores. The photoyield and stability of photoinduced hole and electron centers depends on the silica pore sizes of silica gels and surface area as well as on the TiO2 loading. In large pore silica gels and large particle size of TiO2, photoinduced charge separation reaches to a plateau at shorter irradiation times and the trapped hole and electron centers are more stable to decay.

• Journal of the Korean Magnetic Resonance Society
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• v.12 no.1
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• pp.26-32
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• 2008

We report on the ferromagnetic characteristics of $Zn_{1-x}Mn_xO$ films (x = 0.3) prepared by sol-gel method on the silicon and (0001) ${\alpha}-Al_2O_3$ substrates at the annealing temperature of 700$^{\circ}C$. Magnetic measurements show that Curie temperature ($T_C$) and the coercive field ($H_C$) for the film on the silicon are about 32 K and about 275 Oe, while those for that on the sapphire are about 32 K and 425 Oe, respectively. Energy dispersive spectroscopy and transmission electron microscopy measurements suggest that ferromagnetic precipitates originated by manganese oxide compound formed at the interfaces of the both substrates may be responsible for the observed ferromagnetic behavior of the films. Electron paramagnetic resonance study of the powders up to the concentration of x=0.15 supports the result.

• Journal of the Korean Magnetics Society
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• v.25 no.5
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• pp.149-155
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• 2015

The ECR (Electron Cyclotron Resonance) Ar ion milling was manufactured to fabricate the device of thin film. The ECR ion milling system applied to the device etching operated by a power of 600W, a frequency of 2.45 GHz, and a wavelength of 12.24 cm and transferred by a designed waveguide. In order to match one resonant frequency, a magnetic field of 908 G was applied to a cavity inside of ECR. The Ar gas intruded into a cavity and created the discharged ion beam. The surface of target material was etched by the ion beam having an acceleration voltage of 1000 V. The formed devices with a width of $1{\mu}m{\sim}9{\mu}m$ on the GMR-SV (Giant magnetoresistance-spin valve) multilayer after three major processes such as photo lithography, ion milling, and electrode fabrication were observed by the optical microscope.

• Journal of the Korean Magnetic Resonance Society
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• v.12 no.2
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• pp.103-110
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• 2008

Spin Hamiltonian for the paramagnetic center with a three-fold symmetry and high spin ($S{\geq}2$) multiplicity should contain the fourth order zero-field splitting (ZFS) terms. Electron magnetic resonance transition lines of the center with S = 5/2 are expected to split in a pair when the magnetic field is applied off the principal axes of ZFS, while they are superimposed when the magnetic field is applied parallel to the principal axes of ZFS. In this study we report that the transition lines of $Mn^{2+}$ centers at the three-fold symmetric sites in $LiNbO_3$, chemically equivalent but physically different, split in two due to the nonzero fourth order ZFS term.

• Journal of Magnetics
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• v.16 no.2
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• pp.108-113
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• 2011

The electron spin resonance lineshape (ESRLS) function for the electron spin resonance linewidth (ESRLW) of $Cr^{3+}$ (S = 3/2) in ferroelectric lithium niobate single crystals doped with 0.05 wt% of Cr, is obtained by using the projection operator technique (POT), developed by Argyres and Sigel. The ESRLS function is calculated to be axially symmetric about the c - axis and analyzed by using the spin Hamiltonian $H_{SP}={\mu}_B(B{\cdot}{^\leftrightarrow_{g}}{\cdot}S)+S{\cdot}{^\leftrightarrow_{D}}{\cdot}S$ with the parameters g = 1.972 and D = $0.395\;cm^{-1}$. In the ca plane, the linewidths show a strong angular dependence, whereas in the ab plane, they are independent of the angle. This result implies that the resonance center has an axial symmetry along the c - axis. Further, from the temperature dependence of the linewidths that is shown, it can be seen that the linewidths increase as the temperature increases, at a frequency of v = 9.27GHz. This result implies that the scattering effect increases with increasing temperature. Thus, the POT is considered to be more convenient to explain the scattering mechanism as in the case of other optical resonant systems.