• 한국전기전자재료학회논문지
• /
• 제13권9호
• /
• pp.758-763
• /
• 2000

Dielectric strength of insulators made of epoxy composites rapidly decreases due to ageing to interfaces between the matric resin and filler particles. The adhesion variation of interfaces caused by moisture absorption also alters electrical properties that are the basic characteristics of insulators, particularly, in outdoor use. In this paper, electrical properties of epox/SiO$_2$composites were investigated at boiling absorption condition to observe the influences of moisture. In order to analyze the basic physical properties of samples, scanning electron microscopy and DC, AC and impulse voltage dielectric strength were measured. Also, the breakdown time of samples was measured under AC 6[kV] applied voltage, and the variation of lifetime was verified by using Weibull distribution function.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 학술대회 및 기술세미나 논문집 디스플레이 광소자
• /
• pp.85-88
• /
• 2006

The transport properties of amorphous selenium typical of the material used in direct conversion x-ray imaging devices are reported. The effects of As addition on the carrier mobility and recombination lifetime in amorphous selenium (a-Se) films have been studied using the moving photocarrier grating (MPG) technique. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with the drift mobilities of holes and electrons obtained by time of flight (TOF) measurement.

• 한국방사선학회논문지
• /
• 제6권6호
• /
• pp.489-493
• /
• 2012

양전자소멸법은 양전자와 전자가 만나 소멸하면서 발생하는 광자로부터 물질의 상태를 간접적으로 파악하는 실험 방법이다. 본 연구에서는 다양한 분야에서 널리 사용되고 있는 폴리머인 CR, EPDM, NBR에 대하여 양전자소멸법을 통해 양전자 소멸시간을 측정하였다. 한국원자력연구원의 Na-22 선원을 이용한 양전자소멸시간측정장치를 통해 양전자소멸시간의 세가지 수명과 세기를 측정하였다. 이중 세 번째 수명성분은 폴리머의 자유부피와 직접적으로 관계된다. Tao-Eldrup 모델을 이용하여 3가지 폴리머에 대한 자유부피를 측정하였다. 그 결과 CR, EPDM, NBR의 자유부피와 상대비율은 각각 $0.1217nm^3$(1.910%), $0.1478nm^3$(5.315%), $0.1216nm^3$(2.638%)로 나타났다. 이를 통해 양전자소멸법의 폴리머에 대한 적용성을 확인할 수 있었으며 향후 비파괴적으로 폴리머의 특성변화를 분석하는 자료로 활용될 수 있을 것이다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.1805-1808
• /
• 2006

In this paper, we describe a versatile use of fullerene(C60) as a charge transporting material for organic light-emitting diodes. The use of fullerene as a buffer layer for an anode, a doping material for hole transport layer, and an electron transport layer was investigated. Fullerene improved the hole injection from an anode to a hole transport layer by lowering the interfacial energy barrier and enhanced the lifetime of the device as a doping material for a hole transport layer. In addition, it was also effective as an electron transporting material to get low driving voltage in the device.

• Transactions on Electrical and Electronic Materials
• /
• 제17권3호
• /
• pp.163-167
• /
• 2016

Inverter surge resistant enameled wire was prepared with an organic/inorganic hybrid nanocomposite, and the effect of ambient temperature on the insulation lifetime of the enameled wire in the form of twisted pair was studied by a withstanding voltage tester. The organic polymer was Polyesterimide-polyamideimide (EI/AI) and the inorganic material was a Nano-sized silica (average particle size : 15 nm). The enamel thickness was 50 μm and the ambient temperature was 100, 150, 200, and 250, respectively. Transmission electron microscopy (TEM) observation showed that Nano-sized Silica were evenly dispersed in EI/AI. There were many air gaps in a twisted pair, therefore, when voltage was applied to the twisted pair, enamel erosion took place in the air gap area because of partial discharge accordi, ng to Paschen’s law. As ambient temperature increased, insulation lifetime decreased according to Arrhenius relationship, which was explained by the increasing mobility of polymer chains in EI or AI. And insulation breakdown voltage value at 10 kHz was 1,864.5 sec (31.1 min), which is 1.9 times higher than at 20 kHz, 981.6 sec (16.4 min).

• 한국전기전자재료학회논문지
• /
• 제11권12호
• /
• pp.1070-1078
• /
• 1998

A density of phonon is increased by application of electric field. At this time the phonon which has higher energy than around is called hot phonon is disappeared after 7 picosecond by scattering with electron and loss energy. Since the lifetime of phonon is very short, the effects of hot phonon can be neglected in the low speed semiconductor device, but it must be considered in high speed devices. DC and AC electric fields are applied to bulk GaAs, and the density of phonon is obtained and analyzed for its effects on electron velocity and electron distribution using Monte Carlo simulation method. Under high electric filed the density of hot phonon increased and energy of hot phonon is decreased by scattering with electron on the other hand the energy of electron is increased. Therefore electron move from central valley of conduntion band to satellite vallies and the valocity of electron decrease since the mass of electron in satellite vally is heavier than central vally. In millimeter wave frequencies, the effects of hot phonon increased at higher frequencies.

• 한국재료학회지
• /
• 제27권2호
• /
• pp.107-112
• /
• 2017

The BCBJ (Back Contact and Back Junction) or back-lit solar cell design eliminates shading loss by placing the pn junction and metal electrode contacts all on one side that faces away from the sun. However, as the electron-hole generation sites now are located very far from the pn junction, loss by minority-carrier recombination can be a significant issue. Utilizing Medici, a 2-dimensional semiconductor device simulation tool, the interdependency between the substrate thickness and the minority-carrier recombination lifetime was studied in terms of how these factors affect the solar cell power output. Qualitatively speaking, the results indicate that a very high quality substrate with a long recombination lifetime is needed to maintain the maximum power generation. The quantitative value of the recombination lifetime of minority-carriers, i.e., electrons in p-type substrates, required in the BCBJ cell is about one order of magnitude longer than that in the front-lit cell, i.e., $5{\times}10^{-4}sec$ vs. $5{\times}10^{-5}sec$. Regardless of substrate thickness up to $150{\mu}m$, the power output in the BCBJ cell stays at nearly the maximum value of about $1.8{\times}10^{-2}W{\cdot}cm^{-2}$, or $18mW{\cdot}cm^{-2}$, as long as the recombination lifetime is $5{\times}10^{-4}s$ or longer. The output power, however, declines steeply to as low as $10mW{\cdot}cm^{-2}$ when the recombination lifetime becomes significantly shorter than $5{\times}10^{-4}sec$. Substrate thinning is found to be not as effective as in the front-lit case in stemming the decline in the output power. In view of these results, for BCBJ applications, the substrate needs to be only mono-crystalline Si of very high quality. This bars the use of poly-crystalline Si, which is gaining wider acceptance in standard front-lit solar cells.

• Transactions on Electrical and Electronic Materials
• /
• 제6권5호
• /
• pp.221-224
• /
• 2005

To overcome of poor electron injection in organic light-emitting diodes (OLEDs) with Al cathode, a thin layer of inorganic insulating materials, like as LiF, is inserted between an Al cathode and an organic electron transport layer. Though the device, mentioned above, improves both turn on voltage and luminescent properties, it has some problems like as thickness restriction, less than 2 nm, and difficulty of deposition control. On the other hand, Li organic complex, Liq, is less thickness restrictive and easy to deposit and it also enhances the performance of devices. This paper reports the improved electron injection on OLEDs with another I A group metal complex, Potassium quinolate (Kq), as an electron injection material. OLEDs with organic complexes showed improved turn-on voltage and luminous efficiency which are remarkably improved compared to OLEDs with Al cathode. Especially, OLEDs with Kq have longer life time than OLEDs with Liq.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
• /
• pp.549-552
• /
• 2008

We have developed a novel bipolar host material with both electron and hole transporting characteristics. Since CGH(Cheil Green Host) has some electron transporting characteristics, it shows increased luminance efficiency in device including TCTA and without HBL(hole blocking layer:BAlq). Maximum power efficency of CGH was 27.4lm/W at the device structure ITO/DNTPD(60)/NPB(20)/TCTA(10)/EML(30)/Alq3(20)/LIF(1)/Al. We measured device performance again without HBL. The result of CGH showing 26.0lm/W is outstanding compared to that of CBP showing 19.1lm/W without holeblocking layer. We also measured lifetime and found to be 205hr at 3000nit, that is significant result compared to the life time of CBP device showing 82hr. CGH shows high device performance with holeblocking layer. Moreover, it shows better device performance and life time than those of CBP without holeblocking.

• Journal of Electrochemical Science and Technology
• /
• 제7권1호
• /
• pp.52-57
• /
• 2016

Nanoporous-layer-covered TiO₂ nanotube arrays (Type II TNTs) were fabricated by two-step electrochemical anodization. For comparison, conventional TiO₂ nanotube arrays (Type I TNTs) were also prepared by one-step electrochemical anodization. Types I and II TNTs were detached by selective etching and then transferred successfully to a transparent F-doped SnO₂ (FTO) substrate by a sol-gel process. Both FTO/Types I and II TNTs allowed front side illumination to exhibit incident photon-to-current efficiencies (IPCEs) in the long wavelength region of 300 to 750 nm without the absorption of light by the iodine-containing electrolyte. The Type II TNT exhibited longer electron lifetime and faster charge transfer than the Type I TNT because of its relatively fewer defect states. These beneficial effects lead to a high overall energy conversion efficiency (5.32 %) of the resulting dye-sensitized solar cell.