• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.160-166
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• 1998

The field emission characteristics of defective diamond films grown by microwave plasma enhanced chemical vapor deposition (MPECVD) have been studied. X-ray diffraction, the poor crystal quality and/or small grain sizes of the diamond phase and the inclusion of the non-diamond carbon phases in these films have been condirmed by raman spectroscopy, scanning electron microscopy, atomic force microscopy, and the reflectance measurements. The degrees of the film defectiveness and the emission characteristics were dependent on the methane concentration. Current-versus-voltage measurements have demonstrated that the defective diamond films have good electron emission characteristics. characteristics strongly suggests the defect-related electron-emission mechanism. The defective diamond films deposited on Si substrates show the field emission current density of 1$\mu\textrm{A}/\textrm{cm}^2$ and 1mA/$\textrm{cm}^2$ have been measured at electric fields as low as 4.5V/$\mu\textrm{m}$ and 7.6V/$\mu\textrm{m}$, respectively. We also observed the similar emission characteristics from the defective diamond film deposited on Cr/Si substrate and could decrease the deposition temperature to $600^{\circ}C$.

• Applied Microscopy
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• v.47 no.3
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• pp.86-94
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• 2017

In this study, we will describe a new design of carbon nanotubes tip. Single-walled carbon nanotubes produced using high-pressure CO over Fe particles (HiPCO) at CNI, Houston, TX used in this study. These tips were manufactured by employing a drawing technique using glass puller. Field electron microscopies with tips (cathode) to screen (Anode) separation of ~10 mm was used to characterize the electron emitters. The system was evacuated down to base pressure of (${\sim}10^{-8}$ mbar) when baked at up to (${\sim}200^{\circ}C$) over night. An electron field emission patterns, as well as current versus voltage characteristics and Fowler-Nordheim plots, are discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.2
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• pp.93-101
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• 2002

We have proposed and fabricated two lateral type field emission diodes, poly-Si emitter by utilizing the local oxidation of silicon (LOCOS) and GaN emitter using metal organic chemical vapor deposition (MOCVD) process. The fabricated poly-Si diode exhibited excellent electrical characteristics such as a very low turn-on voltage of 2 V and a high emission current of $300{\;}\bu\textrm{A}/tip$ at the anode-to-cathode voltage of 25 V. These superior field emission characteristics was speculated as a result of strong surface modification inducing a quasi-negative electron affinity and the increase of emitting sites due to local sharp protrusions by an appropriate activation treatment. In respect, two kinds of procedures were proposed for the fabrication of the lateral type GaN emitter: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing $Si_3N_4$ film as a masking layer. The fabricated device using the ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for $7\bu\textrm{m}$ gap and an emission current of~580 nA/l0tips at anode-to-cathode voltage of 100 V. These new field emission characteristics of GaN tips are believed to be due to a low electron affinity as well as the shorter inter-electrode distance. Compared to lateral type GaN field emission diode using ECR-RIE, re-grown GaN emitters shows sharper shape tips and shorter inter-electrode distance.

• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.7-12
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• 2010

Field-emission characteristics of carbon nanotubes(CNTs), which were grown on conical-type tungsten micro-tips by using an electrophoretic deposition(EPD) method, were examined. The EPD method proved to be convenient to manipulate and arrange CNTs from well dispersed suspensions onto such tip-type substrates. The growth rate of CNTs was proportional to the applied d.c. bias voltage and the process time. It was observed from the Raman study that the EPDproduced CNTs showed better crystal qualities with the Raman intensity ratio( $I_D$/$I_G$) of 0.41-0.42 than the CVD-produced CNTs and their crystal qualities could be further improved by thermal annealing. The electron emitters based on the EPDCNTs showed excellent field emission properties, such as the threshold voltage for electron emission of about 620 V and the maximum emission current of about 345 ${\mu}A$. In addition, the EPD-CNTs exhibited the stable long-term(up to 40 h) emission capability and the emission stability was enhanced by thermal annealing.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.122-129
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• 2000

Field emission behavior from vitreous carbon powders deposited on Mo coated glass by electro-phoretic method was investigated. Although the vitreous carbon has only $sp^2$ hybridized carbon bond, we could observe an excellent field emission behavior. Reproducible electron emission was observed without initiation process which is known to be needed in most carbon cathode materials. Critical electric field for electron emission was in the range from 3 to 4 MV/m. The effective work function was estimated to be about 0.06 eV, as obtained from the slope of Fowler-Nordheim plot. The stability of the emission behavior characterized by repeated I-V measurements, was much superior to the Si tips. We observed the possibility of full area light emission in vitreous carbon materials. This results showed that the field emission is not intimately related to the $sp^3$ hybridization of carbon, but the electrical properties of cathod/electrode interface or the conductivity of the cathode materials which required for the electron transport to the cathode surface.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.1277-1281
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• 2007

A Nano-tip as a cold field emitter for inducing a field emission current has manufactured in many ways. In the paper, the electrochemical etching method is used. Thus, in order to optimize the final shape as the field emitter, the reliable fabrication system for electrochemical etching was constructed. In addition, the effective parameters such as applied voltage, submerged length, meniscus height, electrolyte concentration and environmental condition(vibration, humidity, cut-off time) have investigated in detail. By controlling the parameters, reliable tungsten tip for field emitter was fabricated. And the fabricated tungsten tip was evaluated optically. Finally, the very sharp apex of the tungsten tip was observed with scanning electron microscope.

• Journal of the Semiconductor & Display Technology
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• v.8 no.3
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• pp.31-37
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• 2009

This paper presents one and two dimensional simulation results with discontinuous features (shocks) of capacitively coupled rf plasmas. The model consists of the first two and three moments of the Boltzmann equation for the ion and electron fluids respectively, coupled to Poisson's equation for the self-consistent electric field. The local field and drift-diffusion approximations are not employed, and as a result the charged species conservation equations are hyperbolic in nature. Hyperbolic equations may develop discontinuous solutions even if their initial conditions are smooth. Indeed, in this work, secondary electron emission is shown to produce transient electron shock waves. These shocks form at the boundary between the cathodic sheath (CS) and the quasi-neutral (QN) bulk region. In the CS, the electrons emitted from the electrode are accelerated to supersonic velocities due to the large electric field. On the other hand, in the QN the electric field is not significant and electrons have small directed velocities. Therefore, at the transition between these regions, the electron fluid decelerates from a supersonic to a subsonic velocity in the direction of flow and a jump in the electron velocity develops. The presented numerical results are consistent with both experimental observations and kinetic simulations.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.468-468
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• 2011

Carbon nanotubes (CNTs) have been considered as one of the promising candidate for next-generation field emitters because of their unique properties, such as high field enhancement factor, good mechanical strength, and excellent chemical stability. So far, a lot of researchers have been interested in field emission properties of CNT itself. However, it is necessary to study proper field emitter shapes, as well as the fundamental properties of CNTs, to apply CNTs to real devices. For example, specific applications, such as x-ray sources, e-beam sources, and microwave amplifiers, need to get a focused electron beam from the field emitters. If we use planar-typed CNT emitters, it will need several focal lenses to reduce a size of electron beam. On the other hand, the point-typed CNT emitters can be an effective way to get a focused electron beam using a simple technique. Here, we introduce a fabrication of CNT fibers with nanoscale point tips which can be used as a point-typed emitter. The emitter made by the CNT fibers showed very low turn-on electric field, high current density, and large enhancement factor. In addition, it showed stable emission current during long operation period. The high performance of CNT point emitter indicated the potential e-beam source candidate for the applications requiring small electron beam size.

• Proceedings of the KSME Conference
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• 2005.11a
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• pp.239.1-239.1
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• 2005

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.62-62
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• 1999

Carbon based materials have many attractive properties such as a wide band gap, a low electron affinity, and a high chemical and mechanical stability. Therefore, researches on the carbon-based materials as field emitters have been drawn extensively to enhance the field emission properties. Especially, diamond gives high current density, high current stability high thermal conductivity durable for high temperature operation, and low field emission behaviors, Among these properties understanding the origin of low field emission is a key factor for the application of diamond to a filed emitter and the verification of the emission site and its distribution of diamond is helpful to clarify the origin of low field emission from diamond There have been many investigations on the origin of low field emission behavior of diamond crystal or chemical vapor deposition (CVD) diamond films that is intentionally doped or not. However, the origin of the low field emission behavior and the consequent field emission mechanism is still not converged and those may be different between diamond crystal and CVD diamond films as well as the diamond that is doped or not. In addition, there have been no systematic studies on the dependence of nondiamond carbon on the spatial distribution of emission sites and its uniformity. Thus, clarifying a possible mechanism for the low field emission covering the diamond with various properties might be indeed a difficult work. On the other hand, it is believed that electron emission mechanisms of diamond are closely related to the emission sites and its distributions. In this context, it will be helpful to compare the spatial distribution of emission sites and field emission properties of the diamond films prepared by systematic variations of structural property. In this study, we have focused on an understanding of the field emission variations of structural property. In this study, we have focused on an understanding of the field emission mechanism for the CVD grown undoped polycrystalline diamond films with significantly different structural properties. The structural properties of the films were systematically modified by varying the CH4/H2 ratio and/or applying positive substrate bias examined. It was confirmed from the present study that the field emission characteristics are strongly dependent on the nondiamond carbon contents of the undoped polycrystalline diamond films, and a possible field emission mechanism for the undoped polycrystalline diamond films is suggested.