• Title/Summary/Keyword: electron beam method

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Measurement of secondary electron emission coefficient(${\gamma}$) with oblique low energy ion and work function ${\phi}_{\omega}$ of theMgO thin film in AC-PDPs

  • Park, W.B.;Lim, J.Y.;Oh, J.S.;Jeong, H.S.;Jung, K.B.;Jeon, W.;Cho, G.S.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.507-510
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    • 2004
  • Oblique ion-induced secondary electron emission coefficient(${\gamma}$) with low energy ..and work function ${\phi}_{\omega}$(${\theta}$ = 0 and ${\theta}$ = 20) of the MgO thin film in AC-PDPs has been measured by ${\gamma}$-FIB system. The MgO thin film has been deposited from sintered material under electron beam evaporation method. The energy of $He^+$ ions used has been ranged from 50eV to 150eV. Oblique ion beam has been chosen to be 10 degree, 20 degree and 30 degree. It is found that the higher secondary electron emission coefficient(${\gamma}$) has been achieved by the higher oblique ion beam up to inclination angle of 30 degree than the perpendicular incident ion beam.

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Electron Reflecting Layer with the WO3-ZnS:Cu.Al-PbO-SiO2 System Concerned in Doming Property of Shadow Mask in CRT

  • Kim, Sang-Mun;Cho, Yoon-Lae
    • Journal of the Korean Ceramic Society
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    • v.39 no.12
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    • pp.1124-1127
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    • 2002
  • In this paper, we studied the effects of the electron reflection on shadow mask on which the electron reflecting materials with $WO_3-ZnS:Cu.Al-PbO-SiO_2$ system were screen-printed and we evaluated the variation of the electron beam mislanding in CRT. As a result, the green emitted spectra on the electron reflecting layer are observed due to the transformation of the electron energy, when the electron impacted on shadow mask. The beam mislanding is reduced about 40% in comperision with that of CRT made by the conventional method.

New analysis method of electrostatic lens for CRT

  • Seok, J.M.;Ham, Y.S.;Lee, J.I.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.395-398
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    • 2002
  • The spherical aberration and optical integer (f) of the electron gun's main lens in color CRT is obtained, using electron beam trajectory. A spherical aberration is obtained from the relation between the object plane and the image of a beam trajectory. To analyze beam profile, 3rd and 1st order coefficient were obtained and used. It is shown that, in practice, they are applied to electron gun design.

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Enhanced Adhesion of Cu Film on the Aluminum Oxide by Applying an Ion-beam-mixd Al Seed Layar

  • Kim, Hyeong-Jin;Park, Jae-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.229-229
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    • 2012
  • Adhesion of Copper film on the aluminum oxide layer formed by anodizing an aluminum plate was enhanced by applying ion beam mixing method. Forming an conductive metal layer on the insulating oxide surface without using adhesive epoxy bonds provide metal-PCB(Printed Circuit Board) better thermal conductivities, which are crucial for high power electric device working condition. IBM (Ion beam mixing) process consists of 3 steps; a preliminary deposition of an film, ion beam bombardment, and additional deposition of film with a proper thickness for the application. For the deposition of the films, e-beam evaporation method was used and 70 KeV N-ions were applied for the ion beam bombardment in this work. Adhesions of the interfaces measured by the adhesive tape test and the pull-off test showed an enhancement with the aid of IBM and the adhesion of the ion-beam-mixed films were commercially acceptable. The mixing feature of the atoms near the interface was studied by scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy.

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Characterization Method for Testing Circuit Patterns on MCM/PCB Modules with Electron Beams of a Scanning Electron Microscope (MCM/PCB 회로패턴 검사에서 SEM의 전자빔을 이용한 측정방법)

  • Kim, Joon-Il;Shin, Joon-Kyun;Jee, Yong
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.9
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    • pp.26-34
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    • 1998
  • This paper presents a characterization method for faults of circuit patterns on MCM(Multichip Module) or PCB(Printed Circuit Board) substrates with electron beams of a SEM(Scanning Electron Microscope) by inducing voltage contrast on the signal line. The experimentation employes dual potential electron beams for the fault characterization of circuit patterns with a commercial SEM without modifying its structure. The testing procedure utilizes only one electron gun for the generation of dual potential electron beams by two different accelerating voltages, one for charging electron beam which introduces the yield of secondary electron $\delta$ < 1 and the other for reading beam which introduces $\delta$ > 1. Reading beam can read open's/short's of a specific net among many test nets, simultaneously discharging during the reading process for the next step, by removing its voltage contrast. The experimental results of testing the copper signal lines on glass-epoxy substrates showed that the state of open's/short's had generated the brightness contrast due to the voltage contrast on the surface of copper conductor line, when the net had charged with charging electron beams of 7KV accelerating voltages and then read with scanning reading electron beams of 2KV accelerating voltages in 10 seconds. The experimental results with Au pads of a IC die and Au plated Cu pads of BGA substrates provided the simple test method of circuit lines with 7KV charging electron beam and 2KV reading beam. Thus the characterization method showed that we can test open and short circuits of the net nondestructively by using dual potential electron beams with one SEM gun.

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Analysis of Tension Mask Thermal Deformations under Localized Heating and Prediction of Electron Beam Landing Shifts (국부가열에 의한 Tension Mask 의 열변형 해석 및 전자빔의 오착 예측)

  • Shin, Woon-Seo;You, Se-Jonn;Jang, Bo-Woong
    • Journal of the Korean Society for Precision Engineering
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    • v.16 no.8
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    • pp.138-148
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    • 1999
  • Thermal deformations of tension mask under localized heating are analyzed using finite element method and electron beam landing shifts are predicted by the analysis results. In CRT, electron beam landing shifts due to thermal deformations of the tension mask make the color purity of screen worse. In order to get the final results of thermal deformations, firstly the tension processes of the mask and following welding processes between the tensional mask and rail must be analyzed sequentially. And then, nonlinear transient thermo-elastic finite element analysis is performed on every part inside CRT including tension mask, wherein thermal radiation is a main heat transfer mechanism. Because the tension mask has numerous slits, the effective thermal conductivity and effective and effective elastic modulus is calculated, and the tension mask is modeled as a shell without slits. From the displacement results of tension mask, electron beam landing shifts is calculated directly. Experiments are performed to confirm our analysis results. Temperature distributions and beam landing shifts of tension mask are measured and the results are in good agreement with those of analyses.

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Transmission Electron Microscope Sampling Method for Three-Dimensional Structure Analysis of Two-Dimensional Soft Materials

  • Lee, Sang-Gil;Lee, Ji-Hyun;Yoo, Seung Jo;Datta, Suvo Jit;Hwang, In-Chul;Yoon, Kyung-Byung;Kim, Jin-Gyu
    • Applied Microscopy
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    • v.45 no.4
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    • pp.203-207
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    • 2015
  • Sample preparation is very important for crystal structure analysis of novel nanostructured materials in electron microscopy. Generally, a grid dispersion method has been used as transmission electron microscope (TEM) sampling method of nano-powder samples. However, it is difficult to obtain the cross-sectional information for the tabular-structured materials. In order to solve this problem, we have attempted a new sample preparation method using focused ion beam. Base on this approach, it was possible to successfully obtain the electron diffraction patterns and high-resolution TEM images of the cross-section of tabular structure. Finally, we were able to obtain three-dimensional crystallographic information of novel zeolite nano-crystal of the tabular morphology by applying the new sample preparation technique.

Transmission Electron Microscopy Sample Preparation of Ge2Sb2Te5 Nanowire Using Electron Beam

  • Lee, Hee-Sun;Lee, Jun-Young;Yeo, Jong-Souk
    • Applied Microscopy
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    • v.45 no.4
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    • pp.199-202
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    • 2015
  • A simple and novel transmission electron microscopy (TEM) sample preparation method for phase change nanowire is investigated. A $Ge_2Sb_2Te_5$ (GST) nanowire TEM sample was meticulously prepared using nanomanipulator and gas injection system in a field emission scanning electron microscopy for efficient and accurate TEM analysis. The process can minimize the damage during the TEM sample preparation of the nanowires, thus enabling the crystallographic analysis of as-grown GST nanowires without unexpected phase transition caused by e-beam heating.

Influence of surface geometrical structures on the secondary electron emission coefficient $({\gamma})$ of MgO protective layer

  • Park, W.B.;Lim, J.Y.;Oh, J.S.;Jeong, H.S.;Jeong, J.C.;Kim, S.B.;Cho, I.R.;Cho, J.W.;Kang, S.O.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.806-809
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    • 2003
  • Ion-induced secondary electron emission coefficient $({\gamma})$. of the patterned MgO thin film with geometrical structures has been measured by ${\gamma}$ - FIB(focused ion beam) system. The patterned MgO thin film with geometrical structures has been formed by the mask (mesh of ${\sim}$ $10{\mu}m^{2})$ under electron beam evaporation method. It is found that the higher ${\gamma}$. has been achieved by the patterned MgO thin film than the normal ones without patterning.

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Fabrication of Graded-Boundary Ni/steel Material by Electron Beam (전자빔에 의한 조성구배계면 Ni/Steel 합금재료의 개발)

  • 김병철;김도훈
    • Laser Solutions
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    • v.2 no.2
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    • pp.27-33
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    • 1999
  • Electron beam was applied on the low carbon steel in order to fabricate Metal/Metal GBM(Graded Boundary Material). Ni sheet was placed on the steel substrate. The electron beam was irradiated on the surface and produced a homogeous alloyed layer. Sequential repetition of electron beam treatments for 4 times resulted in 8mm thick graded layer. To determine each layers property, optical microscopy, XRD, microhardness tester and EDS were used. The residual stress was measured by the low angle x-ray diffraction method. The graded boundary layer was stepwise profile, but Ni content incresed up to 80 wt% and Fe content decreased 20 wt% near surface. Each layers microstructure and hardness varied by different Fe/Ni composition. The compressive residual stress was induced by martensite transformation in the 1st and End layers and the shrinkage cracks were formed in graded layer by rapid cooling.

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