• 한국표면공학회지
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• 제28권1호
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• pp.46-54
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• 1995

An electrochromic(EC) cell was constructed using $WO_3$ as a electrochromic material and NiO as a counter electrode, deposited onto ITO-coated glass by the implementation of electron beam evaporation. The electrolytic media were both lithium and proton conducting polymers such as poly-acrylonitrile(PAN)-$LiClO_4$, poly-ethylene oxide(PEO)-$LiClO_4$, poly-vinyl butyral(PVB)-LiCl and PVB-H$_3$$PO_4$. Potentiodynamic cycling of the cells using PAN-$LiClO_4$, or PVB-$H_3$$PO_4$ electrolyte yielded a transmission variation of more than 40% at the wavelength of 632.8 nm within less than 10 sec response time at room temperature. These results indicate that these electrolytes, transparent in gel type, are premising for the application in large area electrochromic windows.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.150-150
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• 2013

Al-Mg films were prepared onto steel sheet according to deposition condition by eco-friendly electron beam vacuum evaporation method. The influence of Al-Mg films on corrosion resistance was evaluated by salt spray test and electrochemical method etc.. From the experimented results, it was found that the Al-Mg films which showed good corrosion resistance tend to have fine structure with homogenious composition distribution. In addition, it was shown that the property of coating films can be improve by controlling thickness ratio and uniform distribution of intermetallic compounds in Al-Mg films.

• 한국진공학회지
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• 제8권2호
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• pp.127-135
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• 1999

Nickel oxide films were prepard by using the electron beam evaporation technique. Coloring and bleaching experiments for cyclic durability were repeated in KOH electrolyte by cyclic voltammetry. Visible spectrophtometry was used to assess the stability of the transmittance in the degraded films. X-ray photoelectron spectroscopy results showed that the grain surface are oxygen-rich compared to the grain interiors in a NiO film. Open circuit memory of colored films is about 400hours in lN KOH. The rate of self discharge was evaluated by measuring the transmittance at 550nm of a fully oxidized NiO film. The rate of self discharge was increased polynomially with time and the film is nearly bleached after about 400hours. It was also found that the degraded film by repeated cycles in the KOH solution changed the grain shape of film surface The film prepared under a vacuum pressure of $3\times10^{-4}$ mbar was found to be rather stable when subjected to the repeated coloring and bleaching cycles in KOH electrolyte. Band theory applied to explain the electrochromic mechanism was discussed.

• 한국세라믹학회지
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• 제33권9호
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• pp.1012-1018
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• 1996

To investigate the final structures and reactions of silicides a somewhat thick Ti monolayer Co monolayer and Co/Ti bilayer films were deposited on single Si(100) wafer by electron beam evaporation followed by heat treatment using RTA system in N2 ambient. TiO2 film formed between Ti and TiSi2 layers due to oxgen or moisture in the Ti monolayer sample. The final layer structure obtained after the silicidation heat-treatment of the Co/Ti bilayer sample turned out to be TiSi2/CoSi2/Ti-Co-Si alloy/CoSi2/Si sbustrate. This implies that imperfect layer inversion occurred due to the formation of Ti-Co-Si intermediate phase.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.282-285
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• 1999

Fabrication and pakaging method for low delve voltage and 10Gbps Ti diffused waveguide LiNbO$_3$ optical intensity modulator are described. Optical waveguides were prepared by conventionaly electron-beam evaporation and Ti-indiffusion into Z-cut plate LiNbO$_3$. Traveling-wave electrodes were used for obtaining the wideband frequency response and impedance matching. Microwave effective index and characteristic impedance measured by time domain reflectometry and compared with the calculated value by conformal mapping. The characteristics of 10Gbps modulator at the 1550nm wavelength are as follows : perfect modulation voltage Is about 5V, optical insertion loss Is about 5dB, 3-dB bandwidth is 10GHz, and characteristic impedance is about 50$\Omega$.

• E2M - 전기 전자와 첨단 소재
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• 제8권6호
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• pp.752-758
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• 1995

Red emitting CaS:Eu,S electroluminescent(EL) device prepared at 550.deg. C by an electron-beam evaporation technique, demonstrated luminance of 175cd/m$\^$2/ and efficiency of 0.311m/W with 3kHz drive. Luminance was increased with the increase of applied voltage and frequency. From the results of the PL spectrum and the EL spectrum, the CaS:Eu, S device showed emission peak near 640nm resulted from the transition of EU$\^$2+/ 4f$\^$6/5d.rarw.4f$\^$7/. The capacitance of the phosphor layer from the Sawyer-Tower circuit was 10.5nF/cm$\^$2/.

• 한국진공학회지
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• 제4권S2호
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• pp.24-29
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• 1995

The magnetic amd magneto-optical(MO)properties of Co-based multilayered(ML)films are known to vary sensitively according to the manufacturing methods and the film microstructures. Co/Pd and Co/Pt ML films with ultrathin layers of Co were prepared by alternating deposition in an ultrahigh-vacuum physical-vapor-deposition system. The individual layer thicknesses of the samples were estimated making use of the angular positions of x-ray diffraction peaks. The magnetic and MO properties were investigated, and correlated systematically to the structural parameters of the films. A Kerr spectrometer was self-manufactured to measure the MO properties such as Kerr rotation angle, ellipticity and reflectivity. The rms surface roughness was also measured using atomic force microscopy. Some of the samples showed good properties for MO medium, such as large perpendicular magnetic anisotropy and Kerr rotation, and perfect squareness of the magnetic hysteresis loop.

• 한국결정성장학회지
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• 제5권1호
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• pp.25-36
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• 1995

유리기판(Corning 7059) 위에 Electron Beam Evaporator(EBE)로 진공 중에서 증착된 $Cd_{1-y}Zn_{y}Te$(CZT) 박막의 표면 조성비와 결정구조를 조사하였다. 증착시 기판의 온도는 각각 실온과 $300^{\circ}C$였으며, 열처리는 압력 $1 {\times} 10^{-6}$ torr하에서 $300^{\circ}C$에서 1시간 동안 행하였다. 증착된 CZT 박막의 표면조성비는 Cd 원자가 상대적으로 약 4% 정도 부족하였고, Zn원자는 비교적 안정하였다. 박막의 구조는 거의 Cubic phase인 다결정(polycrystal)이었다. $400^{\circ}C$에서 측정된 X-선 분말 회절상으로부터 구한 격자상수 값으로부터 계산된 열팽창 계수는 $6.30 {\times} 10^{-6}/^{\circ}C$ 이었다. 박막은 열처리에 의하여 회절상의 peak가 증가하였으나 기판의 온도가 결정화에 더 큰 영향을 미치는 것으로 판단된다.

• 한국진공학회지
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• 제7권4호
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• pp.306-313
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• 1998

전기적 착색 텅스텐산화물 박막이 전자비임 증착법에 의해 제작되었다. 전자비임에 의한 막의 퇴화에 미치는 영향이 논의되었다. 진공도 $10^{-4}$mbar에서 제작된 막이 사이클 내 구성 시험에 의한 결과, 가장 안정하였다. 황산 수용액에서 막의 퇴화는 진공도에 의존함을 보였다. 막두께는 산화와 환원전류 그리고 광학적 특성에 큰 영향을 미쳤다. 박막들 중에서 두께 5,000$\AA$의 시료가 사이클에 의한 내구성이 가정 안정하였다. 착색과 탈색이 반복되는 동안에 막의 퇴화의 근원은 막속에 이온의 누적 때문이며, 이로인해 산화와 환원전류가 감 소하였다. 티타늄의 양이 약10~15mol% 함유된 텅스텐산화물 박막은 착색과 탈색사이클이 반복되는 동안 최소한의 퇴화가 일어나서 가정 안정하였다. 사이클이 반복되는 동안 최소한 의 막 퇴화의 주 원인은 막속에 리튬이온의 포획위치 개수의 감소에 있었으며 이로인해 막 의 내구성이 증가하였다.

• Applied Microscopy
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• 제36권spc1호
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• pp.35-40
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• 2006

Self-assembled InAs/GaAs quantum dots (QDs) were grown by the atomic layer epitaxy (ALE) and molecular beam epitaxy (MBE) techniques, The structure and the thermal stability of QDs have been studied by high resolution electron microscopy with in-situ heating experiment capability, The ALE and MBE QDs were found to form a hemispherical structure with side facets in the early stage of growth, Upon capping by GaAs layer, however, the apex of QDs changed to a flat one. The ALE QDs have larger size and more regular shape than those of MBE QDs. The QDs collapse due to elevated temperature was observed directly in atomic scale, In situ heating experiment within TEM revealed that the uncapped QDs remained stable up to $580^{\circ}C$, However, at temperature above $600^{\circ}C$, the QDs collapsed due to the diffusion and evaporation of In and As from the QDs, The density of the QDs decreased abruptly by this collapse and most of them disappeared at above $600^{\circ}C$.