• Journal of the Korean Electrochemical Society
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• v.1 no.1
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• pp.24-27
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• 1998

Electroluminescence (EL) comes from the light emission obtained by the electrical excitation energy passing through a phosphor layer undo. an applied high electrical field $(10^6 V/cm)$. The preparation of white and blue phosphors and characterizations of light emitting alternating current powder electroluminescent devices (ACPELDs) were investigated. In this work, we fabricated two kinds of ELDs, that is, yellow electroluminescent device (B-ELD), blue electroluminescent device (B-ELD). The basic st.uctures of Y-ELD and B-ELD are ITO (Indium Tin Oxide)/phosphor layer/Insulator layer/Carbon electrode and ITO/Phosphor layer/Insulating layer/carbon electrode, respectively. Another structures of ITO/Phosphor and Insulator mixture layer/Backelectrode are introduced. EL spectra and luminance of two types of ELDs were measured by changing voltage at fixed frequency 0.4kHz, 1.5kHz. Blue and yellow phosphors prepared in this work show $50cd/m^2\;and\;30cd/m^2$ of luminance at 400Hz, 150V.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.05a
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• pp.225-231
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• 2006

.고상반응법 (solid state reaction)합성된 ZnS:Mn,Cu,Cl 형광체는 약 $20^{\sim}25{\mu}m$ 의 구형이고, Cubic/hexagonal 구조를 보였다. Electroluminescent device(ELD)는 실크 스크린된 형광층(ZnS:Mn,Cu,Cl)/유전체층 ($BaTiO_3$)으로 구성되었으며, 각층은 $30^{\sim}50{\mu}m,\;50^{\sim}60{\mu}m$ 정도로 도포 하였다. 100 V-400 Hz 의 구동조건에서, ELD 의 백색 발광은 450 nm, 480 nm 픽에서 각각 $Cl_s{\to}Cu^{+}\;_{Zn},\;Cl_s{\to}Cu^{2+}\;_{Zn}$ 전이에 의해 중첩된 청색, 녹색 밴드의 발광과, 580 nm 픽에서 Mn 의 $^{4}T_1{\to}^{6}A_1$ 전이에 의한 황색 밴드의 발광으로 이루어진다. Cu 농도의 증가에 따라 450 nm 의 발광 밴드의 휘도는 감소하며 580 nm 의 발광 밴드의 휘도가 증가하였고 발광 휘도가 향상되었다. 즉, 색온도가 높은 cold white(10000 K)에서 색온도가 낮은 Warm white(3000 K) 로 변한다. 이것은 450 nm 의 발광 밴드가 580 nm 의 발광 밴드에 흡수되는 에너지 전이 (Energy transfer) 현상에 기인한다. ZnS:Mn,Cu,Cl 의 Mn 1.5 wt %, Cu 2.5 wt.% 에서 최적 발광 휘도를 보이며, 100 V-400 Hz 에서 약 $12cd/cm^2$이였다.

• Journal of the Speleological Society of Korea
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• no.85
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• pp.1-14
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• 2008

Electroluminescent Display(ELD) will be the innovative ideas to replace existed electricity illumination systems that consider to under effectiveness and environmental pollution generators in the commercial caves because ELD has less heat and low electricity consumption by the new illumination materials. Characteristics of the ELD are as following: it is a proper matter for the small merchandise ads due to its thickness is only below 3oo micoron, electricity consumption of ELD is less (1/3) than LED, ELD that is a whole face illumination system is much brighter than LED that is a dot illumination system, ELD is longer life than others due to its less light generation systems, ELD is any problems to bend, and it is a best device to use a light board ads. ELD has advantages on conservation of cave biosystems and reduce pollution when ELD is installed in touring spots and emergency corridors of weak illuminated cave internal areas by less heating and low electricity consumption using the indirect illumination of the ELD. Therefore when the high technologic ELD is installed in the commercial caves in Korea, it will be innovating cave environmental systems, saving budgets, and increasing tours.

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.150-155
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• 1997

Powder type electroluminescent device(P-ELD) in this study was prepared by printing method. P-ELDs were basically composed of phosphor, insulator and transparent conducting layer. The phosphor powder was prepared by sintering the mixture of ZnS as a host, Cu as an activator, and NaCl as a flux for co-activator and enhancement of growth of the phosphor particles. The phosphor layer was made by printing the paste of the cyanoethylpullan as a binder and the ZnS system phosphor powder. In order to evaluate the luminescence characteristics of ZnS P-ELD, applied voltage - luminance(V-L), frequency-luminance(f-L), and relative luminance spectra(L- .lambda.) characteristics were measured. The experimental results show that luminance increased with increasing the applied voltage and frequency. It can be explained in terms of the potential barrier formed between ZnS and CuS. Two emission peaks in luminance-wavelength spectra measured at applied voltage of 100 $V_{rms}$ were observed at 500nm as a primary peak and 460nm as a secondary peak, respectively.y.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.147-150
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• 1998

Since P-ELD(powders type electroluminescent device) phenomena were found by G.Destriau at first In 1936, lots of studying was performed in order to realize surface emission devices and flat panel display as a backlight. Due to the problem of low luminance and color and so on, it was delayed. Recently using electric field and thermal effect which can change it\`s molecular arrangement, it can be developed using photoelectric properties of P-ELD. P-ELD in this study was prepared by casting method. Basic structure is ITO/Phosphor/insulator/Al sheet, each layer was mixed by binder, which concentration 11p(poise) for phosphor, 8p(poise) fort insulator. Dielectric properties was investigated first and emission properties of P-ELD based on ZnS:Mn,Cu/ZnS:Cu,Br mixture. P-ELD prepared in this work exhibits about 100cd/㎡ 1-kHz simusoidal excitation.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.36T no.3
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• pp.1-6
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• 1999

The preparation and electrical or optical characteristics of blue-green emitting powder type electroluminescent device(P-ELD) are described. In V-I and Y-L characteristics, current and luminance are increased with increasing frequency and voltage. Luminance was shown 840 cd/$\textrm{m}^2$ at operating condition of 20 kHz, 150 V It can be explained by eqivalent circuit of P-ELD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.116-119
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• 1997

In this paper A double-layer organic electroluminescent(EL) device was fabricated using a TPD(N,N'-dipheny] -N,N'-bis(3-methylphenyl)-[1,1'-biphenyl]-4.4'-diamine: aromatic diamine), as a hole-transport material and tris (8-hydroxy quinolinate) aluminum(Alq$_3$) as a an emiting material and its performance characteristics were investigated. structure of devices is ITO/TPD/Alq$_3$/Al. we have fabricated hole transport layer of two types. Doping material of Hole Transport material is Poly(methyl methacrylate)(PMMA) and PEI(Poly-Ether-Imide). Carrier injection from the electrodes to the doped PMMA and PEI layer through the dopants and concomitant electroluminescence from Alq$_3$were observed. Green emission with luminance of 40cd/m$^2$was achieved at a drive voltage of 30V

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1071-1074
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• 2003

The effects of ZnS insertion on the characteristics of CaS:Pb phosphor were investigated. The intensity of photoluminescence of ZnS inserted CaS:Pb excited by 347nm were increased while that excited by 254nm was unchanged, compared to those of CaS:Pb thin film. The electroluminescent display having ZnS inserted CaS:Pb showed lower threshold voltage and higher efficiency than those of CaS:Pb ELD device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.8
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• pp.679-687
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• 2001

It is known that amorphous BaTiO$_3$ thin films have good insulating properties[1][2]. In this investigation, amorphous BaTiO$_3$ thin films were deposited by rf magnetron sputtering on thick BaTiO$_3$ films of AC powder EL devices which were fabricated by screen-printing. The electrical and optical properties of the EL devices were then investigated. Adding amorphous BaTiO$_3$ thin film, it showed that leakage current density was decreased. Especially, leakage current density was decreased more with he sample of 0.5-hour deposition than the sample of 4-hours deposition. This result led to the improvement of luminous efficiency by 11%. It could be concluded that proper amorphous BaTiO$_3$ thin film deposition improved the surface property of dielectric layer.