• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.525-528
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• 1997

In this study, Eu(TTA)$_3$(phen) was synthesized and its films were prepared by vapor deposition method. Its films were characterized by UV-Vis absorption spectroscopy, Atomic Force Microscopy(AFM) and Photoluminescence(PL) measurements. Their electroluminescent(EL) characteristics were investigated by PL measurements, where a cell structure of glass substrate/ITO/Eu(TTA)$_3$(phen)/Al was employed. It was found that its films were well prepared without any decomposition and the film thickness could be controlled by adjusting the amount of Eu(TTA)$_3$(phen) in a boat. The EL spectrum of these films was almost the same as that of PL spectrum of these films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1050-1053
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• 2004

Many organic materials have been synthesized and extended efforts have been made to obtain high performance electroluminescence(EL) devices, since the first report of the light-emitting diodes based on Alq3. BECCP[bis(3-N-ethylcarbazolyl)cyanoterephthalidene] is a new luminescent material having cyano as an electron acceptor part and carbazole moiety as an electron donor part. The BECCP material shows blue PL and EL spectra of the device at about 480nm and in the ITO/BECCP/Al device shows typical rectifying diode characteristics. We have introduced Alq3 between the electrode and BECCP, and obtained more intensive rectifying diode characteristics in forward and reverse bias.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 1999년도 추계 기술심포지움 논문집
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• pp.45-48
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• 1999

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2000년도 추계 기술심포지움 논문집
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• pp.143-147
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• 2000

• 한국섬유공학회:학술대회논문집
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• 한국섬유공학회 2000년도 봄 한국섬유공학회 학술발표회 논문집(Proceedings of the Korean Textile Conference)
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• pp.271-274
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• 2000

• E2M - 전기 전자와 첨단 소재
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• 제15권1호
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• pp.13-21
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• 2002

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 추계학술발표강연 및 논문개요집
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• pp.101-101
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• 1998

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.70.2-70
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• 1998

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.125-128
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• 1998

Electroluminescent(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. One of the problems of such device is a lifetime, where a degradation of the cell is possibly due to an organic layer's thickness, morphology and interface with electrode. In this study, light-emitting organic electroluminescent devices were fabricated using Alq$_3$(8-hydroxyquinolinate aluminum) and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl)-[1-1'-biphenyl]-4,4'-diamine).Where Alq$_3$ is an electron-transport and emissive layer, TPD is a hole-transport layer. The cell structure is ITO/TPD/Alq$_3$/Al and the cell is fabricated by vacuum evaporation method. In a measurement of current-voltage characteristics, we obtained a turn-on voltage at about 9 V. And we used other buffer layer of PPy(Polypyrrole) with ITO/PPy/TPD/Alq$_3$/Al structure. We observed a surface morphology by AFM(Atomic Force Microscopy), UV/visible absorption spectrum, and PL(Photoluminescence) spectrum. We obtained the UV/visible absorption peak at 358nm in TPD and at 359nm in Alq$_3$, and at 225nm and the PL peaks at 410nm in TPD and at 510nm in Alq$_3$ and at 350nm. We also studied EL spectrum in the cell structure of ITO/TPD/Alq$_3$/Al and ITO/PPy/TPD/Alq$_3$/Al and we observed the EL spectrum peak at 510nm from our cell

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권1호
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• pp.1-4
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• 2002

To obtain the blue emission of powder electroluminescent device, the emission properties of ZnS:Cu were estimated by the variation of applied frequency and the addition of dye to ZnS:Cu phosphor. The variation of applied frequency was from 400 to 4kHz and the addition ratio of dye was from 0 to 5 weight percent respectively. The increment of applied frequency made that emission peaks were shifted from 500.5nm and 460nm at 400Hz to 490nm and 450nm at 4kHz. CIE coordinate system was shifted from x=0.1647, y=0.3711 at 400Hz to x=0.1543, y=0.1856 at 4kHz. On the basis of applied voltage 100V, 400Hz, the increment of addition ratio of dye also made that emission peak was shifted from 505nm(0wt%) to 490nm(5wt%) and the CIE coordinate system was shifted from x=0.1647, y=0.3711(0wt%) to x=0.1334, y=0.2363 (5wt%). The brightness was increased from 60 cd/$m^2$(400Hz) to 174 cd/$m^2$(4kHz) with increment of frequency. When the addition ratio of dye was above 1wt%, the brightness was decreased below 42% of initial brightness and changed from 60 cd/$m^2$(0wt%) to 20.84 cd/$m^2$(5wt%).