• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1994년도 추계 학술발표 강연 및 논문 개요집
• /
• pp.43-44
• /
• 1994

• 한국재료학회지
• /
• 제23권11호
• /
• pp.661-665
• /
• 2013

We investigated the characteristics of electroless plated Cu films on screen printed Ag/Anodized Al substrate. Cu plating was attempted using neutral electroless plating processes to minimize damage of the anodized Al substrate; this method used sodium hypophosphite instead of formaldehyde as a reducing agent. The basic electroless solution consisted of $CuSO_4{\cdot}5H_2O$ as the main metal source, $NaH_2PO_2{\cdot}H_2O$ as the reducing agent, $C_6H_5Na_3O_7{\cdot}2H_2O$ and $NH_4Cl$ as the complex agents, and $NiSO_4{\cdot}6H_2O$ as the catalyser for the oxidation of the reducing agent, dissolved in deionized water. The pH of the Cu plating solutions was adjusted using $NH_4OH$. According to the variation of pH in the range of 6.5~8, the electroless plated Cu films were coated on screen printed Ag pattern/anodized Al/Al at $70^{\circ}C$. We investigated the surface morphology change of the Cu films using FE-SEM (Field Emission Scanning Electron Microscopy). The chemical composition of the Cu film was determined using XPS (X-ray Photoelectron Spectroscopy). The crystal structures of the Cu films were investigated using XRD (X-ray Diffraction). Using electroless plating at pH 7, the structures of the plated Cu-rich films were typical fcc-Cu; however, a slight Ni component was co-deposited. Finally, we found that the formation of Cu film plated selectively on PCB without any lithography is possible using a neutral electroless plating process.

• 한국세라믹학회지
• /
• 제52권4호
• /
• pp.264-268
• /
• 2015

Cu films were plated in an eco-friendly electroless bath (No-Formaldehyde) on Ni/screen printed Ag pattern/PET substrate. For electroless Cu plating, we used sodium-phosphinate ($NaH_2PO_2{\cdot}H_2O$) as reducing agent instead of Formaldehyde. All processes were carried out in electroless solution of pH 7 to minimize damage to the PET substrate. According to the increase of sodium-phosphinate, the deposition rate, the granule size, and rms roughness of the electroless Cu film increased and the Ni content also increased. The electroless Cu films plated using 0.280 M and 0.575 M solutions of sodium-phosphinate were made with Cu of 94 at.% and 82 at.%, respectively, with Ni and a small amount P. All electroless Cu plated films had typical FCC crystal structures, although the amount of co-deposited Ni changed according to the variation of the sodium-phosphinate contents. From these results, we concluded that a formation of higher purity Cu film without surface damage to the PET is possible by use of sodium-phosphinate at pH 7.

• 한국의류학회지
• /
• 제27권7호
• /
• pp.843-850
• /
• 2003

Cu/PET film composites were prepared by electroless copper plating method. In order to improve adhesion between electroless plated Cu layer and polyester (PET) film, the effect of pretreatment conditions such as etching method, mixed catalyst composition were investigated. Chemical etching and plasma treatment increased surface roughness in decreasing order of Ar＞HCl＞O$_2$＞NH$_3$. However, adhesion of Cu layer on PET film increased in the following order: $O_2$＜Ar＜HCl＜NH$_3$. It indicated that appropriate surface roughness and introduction of affinitive functional group with Pd were key factors of improving adhesion of Cu layer. PET film was more finely etched by HCI tolution, resulting in an improvement in adhesion between Cu layer and PET film. Plasma treatment with NH$_3$produced nitrogen atoms on PET film, which enhances chemisorption of Pd$^{2+}$ on PET film, resulting in improved adhesion and shielding effectiveness of Cu layer deposited on the Pd catalyzed surface. Surface morphology of Cu plated PET film revealed that Pd/Sn colloidal particles became more evenly distributed in the smaller size by increasing the molar ratio of PdCl$_2$; SnCl$_2$from 1 : 4 to 1 : 16. With increasing the molar ratio of mixed catalyst, adhesion and shielding effectiveness of Cu plated PET film were increased.d.

• 한국마이크로전자및패키징학회:학술대회논문집
• /
• 한국마이크로전자및패키징학회 2001년도 The IMAPS-Korea Workshop 2001 Emerging Technology on packaging
• /
• pp.95-99
• /
• 2001

Cu is considered as a promising alternative interconnection material to Al-based interconnection materials in Si-based integrated circuits due to its low resistivity and superior resistance to the electromigration. New humping and UBM material systems for solder flip chip interconnection of Cu pads were investigated using electroless-plated copper (E-Cu) and electroless-plated nickel (E-Ni) plating methods as low cost alternatives. Optimally designed E-Ni/E-Cu UBM bilayer material system can be used not only as UBMs for solder bumps but also as bump itself. Electroless-plated E-Ni/E-Cu bumps assembled using anisotropic conductive adhesives on an organic substrate is successfully demonstrated and characterized in this study

• 한국표면공학회지
• /
• 제24권4호
• /
• pp.187-195
• /
• 1991

Adhesion strength of electroless-plated Ni, Ni-P and Cu deposites on alumina substrate has been studied. Grain boundary spaces produced on the substrate surface by etching treatment provided anchoring sites for enhancing the adhesion strength. Adhesion strengths of Ni-P and Ni deposit were higher than that of Cu deposit, because of higher initial nucleation rates than the latter. The electroless-plated Ni-P and Ni underlayer improved the adhesion strength of the Cu deposit. In could be attributed to the enhanced adhesion between the substrate and those underlayers as well as the satisfactory adhesion between Cu deposits and those underlayers. Heat treatment was also conducted in order to enhance the adhesion strength of Cu layer. The strength was enhanced by about 19% when the treatment was conducted at $150^{\circ}C$ for 2 hours. The enhancement was attributed to relief of internal stress and release of hydrogen.

• 한국표면공학회지
• /
• 제45권1호
• /
• pp.8-14
• /
• 2012

The effects of the alkali surface modification process on the adhesion strength between electroless-plated Cu and polyimide films were investigated. The polyimide surfaces were effectively modified by alkali surface treatments from the hydrophobic to the hydrophilic states, and it was confirmed by the results of the contact angle measurement. The surface roughness increased by alkali surface treatments and the adhesion strength was proportional to the surface roughness. The adhesion strength of Cu/polyimide interface treated by KOH + EDA (Ethylenediamine) was 874 gf/cm which is better than that treated by KOH and KOH + $KMnO_4$. The results of XPS spectra revealed that the alkali treatment formed oxygen functional groups such as carboxyl and amide groups on the polyimide films which is closely related to the interfacial bonding mechanism between electroless-plated Cu and polyimide films. It could be suggested that the species and contents of functional group on polyimide films, surface roughness and contact angle were related with the adhesion strength of Cu/polyimide in combination.

• 한국재료학회지
• /
• 제19권11호
• /
• pp.625-630
• /
• 2009

Embedding of active devices in a printed circuit board has increasingly been adopted as a future electronic technology due to its promotion of high density, high speed and high performance. One responsible technology is to embedded active device into a dielectric substrate with a build-up process, for example a chipin-substrate (CiS) structure. In this study, desmear treatment was performed before Cu metallization on an FR-4 surface in order to improve interfacial adhesion between electroless-plated Cu and FR-4 substrate in Cu via structures in CiS systems. Surface analyses using atomic force microscopy and x-ray photoemission spectroscopy were systematically performed to understand the fundamental adhesion mechanism; results were correlated with peel strength measured by a 90o peel test. Interfacial bonding mechanism between electrolessplated Cu and FR-4 substrate seems to be dominated by a chemical bonding effect resulting from the selective activation of chemical bonding between carbon and oxygen through a rearrangement of C-C bonding rather than from a mechanical interlocking effect. In fact, desmear wet treatment could result in extensive degradation of FR-4 cohesive strength when compared to dry surface-treated Cu/FR-4 structures.

• 한국태양에너지학회:학술대회논문집
• /
• 한국태양에너지학회 2009년도 추계학술발표대회 논문집
• /
• pp.350-355
• /
• 2009

The crysralline silicon solar cell where the solar cell market grows rapidly is occupying of about 85% or more high efficiency and low cost endeavors many crystalline solar cells. The fabricaion process of high efficiency crystalline silicon solar cells necessitate complicated fabrication processes and Ti/Pd/AG contact, This metal contacts have only been used in limited areas in spite of their good srability and low contact resistance because of expensive materials and process. Commercial solar cells with screen-printed solar cells formed by using Ag paste suffer from loe fill factor and high contact resistance and low aspect ratio. Ni and Cu metal contacts have been formed by using electroless plating and light-induced electro plating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on 0.2~0.6${\Omega}$ cm, $20{\times}20mm^2$, CZ(Czochralski) wafer.

• 공업화학
• /
• 제33권6호
• /
• pp.630-635
• /
• 2022

멜라민 스펀지를 열처리하여 제조된 질소함유 탄소 스펀지에 산화구리(CuO)를 무전해 도금하여 기판없이 작동하는 일산화질소(NO) 가스 센서를 제조하였다. 탄소 스펀지 표면의 CuO 함량은 도금 시간이 증가함에 따라 증가하였으나, NO 가스 흡착을 유도한다고 알려져 있는 질소의 함량은 CuO 표면 함량이 증가함에 따라 감소하였다. 미처리 탄소스펀지는 NO 가스에 대하여 18 min에 최대 저항 변화(5.0%)를 나타내었다. 반면에, CuO가 도금된 샘플(CuO30s-CS)은 8 min만에 최대 18.3%의 저항변화를 보였다. 이러한 NO 가스 감지 능력 향상은 CuO로 인하여 탄소 스펀지의 정공 캐리어 수 증가 및 전자전달 촉진에 기인하는 것으로 판단된다. 그러나, 60 s 동안 CuO 무전해 도금된 탄소 스펀지의 NO가스 감지 저항은 1.9%로 오히려 감소하였다. 이는 탄소 스펀지 표면에 CuO로 완전히 도금되어 NO 가스 흡착 능력이 떨어져 저항변화가 감소한 것으로 판단된다. 따라서, CuO가 도금된 탄소 스펀지는 빠르고 우수한 저항변화 특성을 가지고 있어 유용한 NO 가스 센서로 사용할 수 있으나, CuO가 탄소 스펀지 표면을 완전히 도금해서는 안 된다.