• 마이크로전자및패키징학회지
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• 제10권1호
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• pp.7-11
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• 2003

반도체 칩이나 전자제품에 사용되는 부품들은 작동할 때 발열을 하게 되며 발생한 열이 적절히 제거되지 않을 경우 제품 오작동의 원인이 된다. 이러한 열을 제거하기 위해 히트싱크(heatsink)와 냉각 팬 (cooling fan)을 조합한 냉각 구조가 사용된다. 그러나 히트싱크와 냉각 팬의 조합 구조는 복잡한 형상을 취하기 때문에 전기 전자 제품의 소형화 추세에 부응하기에는 어려움이 따른다. 냉각 효율은 히트싱크의 표면적과 히트싱크 제조시 사용된 재료에 따라 달라진다. 일반적인 냉각 구조의 한계를 극복하기 위한 방안으로써, Trach-etched 멤브레인의 표면과 기공(pore)에 무전해 금도금과 구리 도금을 실행하여 크기는 작으면서 표면적을 증가시킨 마이크로 히트싱크를 제조하였다. 제조한 마이크로 히트싱크의 구조는 주사현미경(SEM)과 광학 현미경으로 관찰하였으며, 일반적인 구리보다 열효율이 우수함을 방열 특성 실험을 통해 관찰하였다.

• Bulletin of the Korean Chemical Society
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• 제25권2호
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• pp.167-171
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• 2004

The electroless deposition of copper on the hydrogen-terminated Si(111) surface was investigated by means of attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy, scanning tunneling microscopy (STM), and energy-dispersive spectroscopy (EDS). The hydrogen-terminated Si(111) surface prepared was stable under air atmosphere for a day or more. It was found from ATR-FTIR that two bands centered at 2000 and 2260 $cm^{-1}$ appeared after the H-Si(111) surface was immersed in 40% $NH_4F$ solution containing 10 mM $Cu^{2+}$. On the other hand, STM image included the copper islands with a height of 5 nm and a diameter of 10-20 nm. The EDS data displayed the presence of copper, silicon and oxygen species. The results were rationalized in terms of the redox reaction of surface Si atoms and $Cu^{2+}$ ions in solutions, which are changed into $Si(OH)_x(F)_y$ containing $SiF_6^{2-}$ ions and neutral copper islands.

• 한국재료학회지
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• 제24권4호
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• pp.186-193
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• 2014

A thin Cu seed layer for electroplating has been employed for decades in the miniaturization and integration of printed circuit board (PCB), however many problems are still caused by the thin Cu seed layer, e.g., open circuit faults in PCB, dimple defects, low conductivity, and etc. Here, we studied the effect of heat treatment of the thin Cu seed layer on the deposition rate of electroplated Cu. We investigated the heat-treatment effect on the crystallite size, morphology, electrical properties, and electrodeposition thickness by X-ray diffraction (XRD), atomic force microscope (AFM), four point probe (FPP), and scanning electron microscope (SEM) measurements, respectively. The results showed that post heat treatment of the thin Cu seed layer could improve surface roughness as well as electrical conductivity. Moreover, the deposition rate of electroplated Cu was improved about 148% by heat treatment of the Cu seed layer, indicating that the enhanced electrical conductivity and surface roughness accelerated the formation of Cu nuclei during electroplating. We also confirmed that the electrodeposition rate in the via filling process was also accelerated by heat-treating the Cu seed layer.

• Bulletin of the Korean Chemical Society
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• 제33권7호
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• pp.2333-2337
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• 2012

We report the synthesis and thermal annealing of Si-core/ZnO-shell nanorods using a two-step process comprising the metal-assisted electroless etching of Si and the sputter deposition of ZnO. Transmission electron microscopy and X-ray diffraction analysis showed that the cores of the annealed core-shell nanorods were single crystal diamond cubic-type Si, whereas the shells of the annealed core-shell nanorods were single crystal wurtzite-type ZnO. The PL spectra of Si nanorods consisted of a broad red emission band and a weaker blue emission band. The major emission band of Si nanorods was shifted from 700 nm (in the red region) to 440 nm (in the violet region) by ZnO coating. The violet emission of the core-shell nanorods was enhanced in intensity considerably by annealing in an oxidizing atmosphere. The origin of the PL enhancement by annealing is also discussed.

• E2M - 전기 전자와 첨단 소재
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• 제10권1호
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• pp.39-44
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• 1997

Bulk type radiation detector of Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure using Cd$_{1-x}$ Zn$_{x}$Te(x=20%) wafer(3x4xl mm$^{3}$) grown by high pressure Bridgman method has been developed. We etched wafer surfaces with 2% Br-methanol solution and coated gold thin film on the surfaces by electroless deposition method for 5 min. in 49/o HAuCI$_{3}$ 4H20 solution. Initial etch rates of Cd, Zn and Te were 46%, 12% and 42% respectively. After etched, the surface of wafer was slightly revealed to Te rich condition. The leakage current was increased with etch time, but it didn't exceed 3nA at 50volt. The thickness of Au film was about 100nm by Rutherford Backscattering Spectroscopy(RBS). The resolution were 6.7% for 22.1 keV photon from 109 $^{109}$ Cd and 8.2% for 59.5 keV photon from $^{241}$ Am. The radiation detector such as Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure was more effective to monitor the low energy gamma radiation.iation.

• 한국표면공학회지
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• 제32권3호
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• pp.447-451
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• 1999

Silver has the highest electrical conductivity of all metals and consequently this property is an attractive feature which makes it a leading candidate for use in electronic devices. The research conducted was focused primarily on the development of a process for obtaining a deposited silver-coating onto alumina, for applications related to electrical-conducting devices and, ancillarily, catalysts. Alumina balls and plane substrates were utilized for the investigation. The coating process employed an aqueous ammoniacal silver-nitrate electrolytes with a formaldehyde solution as the reductant. Modifying additives-an activator which would be expected to promote good deposition-characteristics onto the (dielectric) substrate and an inhibitor which would obviate homogeneous reduction (precipitation) of silver was observed when the activator-containing silver-electrolyte reductant constituents were combined. However, the silver-electrolyte/reductant system with inhibitor could be employed (at 8$0^{\circ}C$) to achieve a viable (subject to future research optimization) coating on alumina. The influence of the processing temperature on the deposition process was delineated during the course of the research. The morphology of the deposited-silver on the alumina balls was assessed by SEM imaging. A tape-peel test was employed, with the plane substrates, to semi-quantitatively characterize the adhesion to the alumina.

• 한국분말재료학회지
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• 제29권6호
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• pp.511-516
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• 2022

Electroless plating is widely utilized in engineering for the metallization of insulator substrates, including polymers, glass, and ceramics, without the need for the application of external potential. Homogeneous nucleation of metals requires the presence of Sn-Pd catalysts, which significantly reduce the activation energy of deposition. Therefore, rinsing conducted during Sn sensitization and Pd activation is a key variable for the formation of a uniform seed layer without the lack or excess of catalysts. Herein, we report the optimized rinsing process for the functionalization of Sn-Pd catalysts, which enables the uniform FeCo metallization of the glass fibers. Rinsing enables good deposition of the FeCo alloy because of the removal of excess catalysts from the glass fiber. Concurrently, excessive rinsing results in a complete removal of the Sn-Pd nucleus. Collectively, the comprehensive study of the proposed nanomaterial preparation and surface science show that the metallization of insulators is a promising technology for electronics, solar cells, catalysts, and mechanical parts.

• Bulletin of the Korean Chemical Society
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• 제28권8호
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• pp.1285-1288
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• 2007

Au was electrolessly deposited on polycarbonate (PC) membranes (0.1 μm pores) at the air/water interface. It was found that the Au nanotube dimension can be controlled by adjusting the plating temperature and the solution composition. Interfacial deposition of Au at relatively low temperatures (4℃) produced long nanotubes, which run through the whole membrane thickness with small openings. Increase of plating temperatures resulted in the decrease of nanotube lengths and Au film thicknesses. It was also disclosed that the inside-diameter of Au nanotubes can be controlled with negligible variations in length by changing the composition of a plating solution.

• 한국재료학회지
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• 제9권3호
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• pp.274-281
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• 1999

합금박막형 자기기록매체의 제작방법은 스퍼터링과 무전해 도금방법이 주로 이용되고 있으며, 미국이나 일본 등에서는 스퍼터링 방법에 비하여 대량생산이 용이하고, 도금조건에 따라 다양한 특성의 합금박막을 제조할 수 있는 무전해 도금방법을 이용한 합금자성박막에 대하여 많은 연구를 하고 있지만 국내에서는 이에 관한 연구가 매우 미약한 실정이다. 따라서 이 연구에서는 차아인산이수소나트륨을 환원제로 사용한 무전해 도금법을 이용하여 corning glass 2948 유리기판 위에 Co-Mn-P 도금층은 석출전위에 따라 산성에서 석출되지 않고 알칼리성에서만 환원석출반응에 의해 형성되었으며, 석출속도는 pH와 온도가 증가할수록 상승하여 pH10, 온도 $80^{\circ}C$일 때 가장 우수하였다. 자기적 특성은 pH9, 온도 $70^{\circ}C$일 때 보자력 870Oe, 각형비 0.78로 가장 우수하였으며, 이 때, Co-P 도금층의 인(P)의 함량은 2.54%，두께는 $0.216\mu\textrm{m}$였다. 결정배향은 $\beta$-Co의 Fcc는 발견되지 않았고, $\alpha$-Co의 hcp(1010), (0002), (1011)방향의 결정배향을확인할 수 있었으며, (1010), (1011)방향이 우선 배향한 것으로 보아 수평자기벡터를 형성함을 확인할 수 있었다. 무전해 Co-Mn-P 도금층은 Co-P 도금층에 비해 보자력의 경우 100Oe 정도 증가하였지만, 각형비에 있어서는 큰 변화가 없었고, 결정배향 또는 Co-P 도금층과 마찬가지로 $\alpha$-Co (1010), (1011)방향이 우선 배향하여 수평자기벡터를 형성함을 확인할 수 있었다.2년경에 판매되는 단말기의 80%정도는 멀티모드타입 단말기일 것으로 예측되는 점, 그리고 금년말까지 100개 회사 이상이 SDR 포럼 멤버로 가입할 것으로 예측되는 점, 무선 인터넷 폭발적인 성장으로 복합 멀티미디어 단말기 시대가 다가오는 점 등으로 미루어 볼 때, 고객의 서비스 가치선택에 역점을 둔 기술을 중시해야 한다는 점에서 더욱 설득력을 지닌다. 따라서 이 같은 목적과 3세대 이동통신 및 인터넷 사용자의 증가, 반도체기술의 발전에 힘입어, 과거 군용 시스템에서 이용되던 SWR 기술을 상용시스템 특히 3세대 이동통신에 적용하려는 연구가 활발히 진행되고 있다. '96년 SDR 포럼이 결성되었는데, 목적은 휴대형 장치(hand-held devices), 기지국(base stations), 차량형 장치(mobile stations)를 포함하는 다중모드(multi-mode), 다중대역(multi-band) SDR을 위한 개방형 구조의 표준을 정하기 위함이다. 이 같이 public forum에 의한 표준(open architecture standard)이 정해지면 그 다음은 이를 어떻게 구현할 것인가가 문제가 될 것이다. 본고에서는 먼저 SDR 단말기 요구사항을 살펴보고, 이 요구사항들을 만족하는 SDR 단말기 구조, SDR 계층참조 모델, 그리고 기존의 단말기 구조와 SDR 계층참조 모델의 연관관계에 대해 살펴보고, 크게 두가지 종류의 단말기 즉 사용 SDR 단말기와 군용 SDR 단말기에 대해 살펴보고, 설계 절차 및 현재 시점에서 단말기 구현을 위해 해결해야 하는 기술적 과제를 살펴보고 결론을 언급한다.a^{2+}$ 통로를 자극함으로써 세포바깥의 $Ca^{2+}$이 세포안으로 이동하여 나타나는 변화로 생각된다.축력의 차이로부터 기인한다고

• 한국표면공학회지
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• 제50권3호
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• pp.177-182
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• 2017

The properties of electroless Ni-B thin film on diamond powder with different parameters (temperature, pH, surfactant etc.) were studied. The surface morphology, structure and composition distribution of the Ni-B film were observed by field effect scanning electron microscope (FE-SEM), energy-dispersive spectrometer (EDS), X-ray diffraction (XRD) and Auger electron spectroscopy (AES). The growth rate of Ni-B film was increased with increase of bath temperature. The B content in Ni-B film was reduced with increase of bath pH. As a result the structure of Ni-B film was changed from amorphous to crystalline structure. The PVP in solution plays multi-functional roles as a dispersant and a stabilizer. The Ni-B film deposited with adding 0.1 mM-PVP was strongly introduced an amorphous structure with higher B content (25 at.%). Also the crystallite size of Ni-B film was reduced from 12.7 nm to 5.4 nm.