• Journal of Powder Materials
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• v.18 no.5
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• pp.430-436
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• 2011

Joining of NiO-YSZ to 316 stainless steel was carried out with B-Ni2 brazing alloy (3 wt% Fe, 4.5 wt% Si, 3.2 wt% B, 7 wt% Cr, Ni-balance, m.p. 971-$999^{\circ}C$) to seal the NiO-YSZ anode/316 stainless steel interconnect structure in a SOFC. In the present research, interfacial (chemical) reactions during brazing at the NiO-YSZ/316 stainless steel interconnect were enhanced by the two processing methods, a) addition of an electroless nickel plate to NiO-YSZ as a coating or b) deposition of titanium layer onto NiO-YSZ by magnetron plasma sputtering method, with process variables and procedures optimized during the pre-processing. Brazing was performed in a cold-wall vacuum furnace at $1080^{\circ}C$. Post-brazing interfacial morphologies between NiO-YSZ and 316 stainless steel were examined by SEM and EDS methods. The results indicate that B-Ni2 brazing filler alloy was fused fully during brazing and continuous interfacial layer formation depended on the method of pre-coating NiO-YSZ. The inter-diffusion of elements was promoted by titanium-deposition: the diffusion reaction thickness of the interfacial area was reduced to less than 5 ${\mu}m$ compared to 100 ${\mu}m$ for electroless nickel-deposited NiO-YSZ cermet.

• Resources Recycling
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• v.14 no.4 s.66
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• pp.34-40
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• 2005

Reusing of electroless Co-Cu-P waste solution was investigated in the respect of plating time, plating rate, solution composition and deposit. Plating time of cobalt-catalytic surface took longer than that of zincated-catalytic surface. It was possible to reuse the waste solution by mixing $50\%$ fresh solution at batch type. Plating time of initial solution at continuous type took longer 7.5 times over than that of batch type. Plating time of $50\%$ waste solution additive at continuous type took longer 2.5 times over than that of batch type. Component change of cobalt-topper for electroless deposition was greatly affected by deposit inferiority and rapid decrease in plating rate.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.323-323
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• 2013

High power light-emitting diodes (LEDs) are widely used in many device applications due to its ability to operate at high power and produce high luminance. However, releasing the heat accumulated in the device during operating time is a serious problem that needs to be resolved to ensure high optical efficiency. Ceramic or Aluminium base metal printed circuit boards are generally used as integral parts of communication and power devices due to its outstanding thermal dissipation capabilities as heat sink or heat spreader. We investigated the characterisation of electroless plating of Ni-B film according to plating bath temperature, ranging from $50^{\circ}C$ to $75^{\circ}C$ on Ag paste/anodised Al ($Al_2O_3$)/Al substrate to be used in metal PCB for high power LED packing systems. X-ray diffraction (XRD), Field-Emission Scanning Electron Microscopy (FE-SEM) and X-ray Photoelectron Spectroscopy (XPS) were used in the film analysis. By XRD result, the structure of the as deposited Ni-B film was amorphous irrespective of bath temperature. The activation energy of electroless Ni-B plating was 59.78 kJ/mol at the temperature region of $50{\sim}75^{\circ}C$. In addition, the Ni-B film grew selectively on the patterned Ag paste surface.

• Journal of the Korean institute of surface engineering
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• v.18 no.4
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• pp.153-163
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• 1985

In the electroless nickel plating bath which contained nickel sulfate, sodium hypophosphite, boric acid and triethanolamine, effect of their concentration on the rate of deposition was tested by gravimetric method and polarization method. The polarization method that polarize small range of voltage anodicaly and cathodicaly at the mixed potential in the electroless plating bath can calculate mixed current (depositing rate) from $i_{mp}=\frac {i}{\eta}\;\frac{RT}{nF}\;or\;i_{mp}=\frac{i}{\eta}\;\frac{1}{2.3}(\frac{b_a\;\;b_c}{b_c+b_a})$ Where $i_{mp}$ is the depositing current, i is the polarized current, ${\eta}$ is the polarized voltage, $b_a\;and\;b_c$ are the Tafel slop of anodic and cathodic polarization curves respectively. The calculated mixed current ($i_{mp}$) is proportional to the depositing rate obtained by gravimetric method and corresponded mostly to the real depositing rate by multifying supplementary constant. The polarization method can be used for founding inclination of reaction on various concentration of each composition. Decreasing or increasing concentration of triethanolaminc as a complexing agent , the depositing rate is decreased and when the bath contained 25-50mL/L of triethanoloamine, the depositing rate is increased. The depositing rate is increased with increasing the concentration of boric acid, and when the bath contained 0.5M of boric acid, the depositing rate is increased abruptly. The optimum composition of the electroless nickel bath was estimated 0.1M of nickel sulfate, 0.25M of sodium hypophosphite, 0.5M of boric acid, and 25-50mL/L of triethanalamine.

• Korean Journal of Metals and Materials
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• v.48 no.11
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• pp.1041-1046
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• 2010

The reactions between a Sn-3.0Ag-0.5Cu solder alloy and electroless Ni/electroless Pd/immersion Au (ENEPIG) surface finishes with various Pd layer thicknesses (0, 0.05, 0.1, 0.2, $0.4{\mu}m$) were examined for the effect of the Pd layer on the massive spalling of the $(Cu,Ni)_6Sn_5$ layer during reflow at $235^{\circ}C$. The thin layer deposition of an electroless Pd (EP) between the electroless Ni ($7{\mu}m$) and immersion Au ($0.06{\mu}m$) plating on the Cu substrate significantly retarded the massive spalling of the $(Cu,Ni)_6Sn_5$ layer during reflow. Its retarding effect increased with an increasing EP layer thickness. When the EP layer was thin (${\leq}0.1{\mu}m$), the retardation of the massive spalling was attributed to a reduced growth rate of the $(Cu,Ni)_6Sn_5$ layer and thus to a lowered consumption rate of Cu in the bulk solder during reflow. However, when the EP layer was thick (${\geq}0.2{\mu}m$), the initially dissolved Pd atoms in the molten solder resettled as $(Pd,Ni)Sn_4$ precipitates near the solder/$(Cu,Ni)_6Sn_5$ interface with an increasing reflow time. Since the Pd resettlement requires a continuous Ni supply across the $(Cu,Ni)_6Sn_5$ layer from the Ni(P) substrate, it suppressed the formation of $(Ni,Cu)_3Sn_4$ at the $(Cu,Ni)_6Sn_5/Ni(P)$ interface and retarded the massive spalling of the $(Cu,Ni)_6Sn_5$ layer.

• Applied Chemistry for Engineering
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• v.30 no.2
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• pp.212-218
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• 2019

To investigate the effect of the oxyfluorination of carbon nanotubes (OF-CNTs) on electroless Ni deposition and electromagnetic interference shielding efficiency (EMI SE), CNTs were treated with a mixture of oxygen and fluorine gases and sequentially deposited with nickel. These samples were then manufactured into thin films on a polyimide film to evaluate their EMI SE. The surface chemical property of OF-CNTs was investigated by X-ray photoelectron spectroscopy. From the results of thermogravimetric and scanning electron microscopic analyses, it was found that both the amount of deposited Ni and the surface morphology changed depending on oxyfluorination. Moreover, the Ni-deposited CNTs pretreated with $O_2:F_2=1:9vol%$ exhibited the maximum EMI SE as approximately 19.4 dB at 1 GHz. These results were attributed to the formation of oxygen and fluorine functional groups on the surface of CNTs due to the oxyfluorination, and the functional groups enabled to deposit a suitable amount of Ni and improve the dispersion in the deposited solution.

• Journal of Integrative Natural Science
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• v.10 no.2
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• pp.65-73
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• 2017

In this review paper, we will discuss about the methods of synthesizing Si nanowires by Top-down and Bottom-up. Silicon nanowires have a lot of application on various fields such as Li ion batteries, solar cells, chemical and biological sensors. We will address some of the applications of silicon Nanowires.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.83-84
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• 2007

Damascene 공정을 이용하여 80nm급의 trench 패턴 내에 구리 배선 형성을 위해 무전해 구리 도금법을 이용하였다. 화학 반응으로 진행되는 무전해 도금법에 의한 구리이온의 초미세 패턴 내 환원 과정에 구리 이온의 물질 전달과정이 구리 도금층의 표면 특성과 superconformality에 미치는 영향을 살펴보았다. 회전 전극에 고정된 칩의 회전 속도가 증가함에 따라 구리 도금층의 비저항이 감소하고, trench 내 균일 도금성이 향상되는 것으로 나타났다.

• Journal of the Korean institute of surface engineering
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• v.20 no.4
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• pp.154-162
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• 1987

The recent literatures on the amorphous plating are reviewed. The methods of the amorphous plating are classified into the electrodeposition and electroless deposition. The structure and properties of the amorphous deposits, and the prospect in the future on the amorphous plating are discussed.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.5
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• pp.475-480
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• 2017

In this paper, the conductivity of the fine pattern is improved in the insulating substrate by laser-induced forward transfer (LIFT) process. The high laser beam energy generated in conventional laser induced deposition processes induces problems such as low deposition density and oxidation of micro-patterns. These problems were improved by using a polymer coating layer for improved deposition accuracy and conductivity. Chromium and copper were used to deposit micro-patterns on silicon wafers. A multi-pulse laser beam was irradiated on a metal thin film to form a seed layer on an insulating substrate(SiO2) and electroless plating was applied on the seed layer to form a micro-pattern and structure. Irradiating the laser beam with multiple scanning method revealed that the energy of the laser beam improved the deposition density and the surface quality of the deposition layer and that the electric conductivity can be used as the microelectrode pattern. Measuring the resistivity after depositing the microelectrode by using the laser direct drawing method and electroless plating indicated that the resistivity of the microelectrode pattern was $6.4{\Omega}$, the resistance after plating was $2.6{\Omega}$, and the surface texture of the microelectrode pattern was uniformly deposited. Because the surface texture was uniform and densely deposited, the electrical conductivity was improved about three fold.