• International Journal of Precision Engineering and Manufacturing
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• v.9 no.4
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• pp.74-78
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• 2008

High-speed tool steels are extensively used in tooling industries for manufacturing cutting tools, forming tools, and rolls. Electrical discharge machining (EDM) has been found to be an effective process for machining these extremely hard and difficult-to-cut materials. Extensive research has been conducted to identify the optimum machining parameters for EDM with different tool steels. This paper presents a fundamental study of the surface characteristics of SKH-51 tool steel machined by micro-EDM, with particular focus on obtaining a better surface finish. An RC pulse generator was used to obtain a better surface finish as it produces fine discharge craters. The main operating parameters studied were the gap voltage and the capacitance while the resistance and other gap control parameters were kept constant. A negative tungsten electrode was used in this study. The micro-EDM performance was analyzed by atomic force microscopy to determine the average surface roughness and the distance between the highest peak and lowest valley. The topography of the machined surface was observed using a scanning electron microscope and a digital optical microscope.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.3
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• pp.63-67
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• 2001

Up to now, most studies about Pt-etching have been focused on physical sputtering mechanism with Cl-based plasma, while only a limited results are available for etching characteristics with fluorine-based plasma. In this study, etch characteristics of Pt thin film with $Cl_2$/Ar and $SF_{6}$/Ar Ar gas chemistries have been studied with ECR plasma etching system. It is confirmed that $SF_{6}$/Ar Ar plasma chemistry could make volatile etch-products through the reaction with Pt thin film. Also the improvement in etch rate, etch profile and surface roughness is obtained due to the formation of volatile platinum fluoride compounds.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.910-913
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• 2009

This paper examines attaching speed, detaching speed and contact time which affected in the ink transfer ratio and presents the best conditions for fabrication process of electrodes with Ag-ink using microcontact printing method. In conclusion, it shows the best printing characteristic by two conditions. One of condition is the attaching speed have to within less than 1mm/s and the detaching speed is high velocity as 1000mm/s and the contact time is taken about the minimum time when inking process. Another condition is the attaching speed have to within more than 100mm/s and the detaching speed have to within less than 1mm/s and the contact time is longer than 30second when the printing process. As using these condition and the stamp sized 5cm${\times}$5cm, it was possible for printing equally until $30{\mu}m$ of width. The printed thickness of a electrode was about 300 to 500 nm, the surface roughness was about dozens nm under 50 nm.

• International Journal of Fuzzy Logic and Intelligent Systems
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• v.5 no.3
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• pp.183-188
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• 2005

Although it is widely used to find an optimum setting of manufacturing process parameters in a variety of engineering fields, the Taguchi method has a difficulty in dealing with multi-response situations in which several response variables should be considered at the same time. For example, electrode wear, surface roughness, and material removal rate are important process response variables in an electrical discharge machining (EDM) process. A simultaneous optimization should be accomplished. Many researches from various disciplines have been conducted for such multi-response optimizations. One of them is a fuzzy logic approach presented by Lin et al. [1]. They showed that two response characteristics are converted into a single performance index based upon fuzzy logic. However, it is pointed out that information regarding relative importance of response variables is not considered in that method. In order to overcome this problem, a desirability function can be adopted, which frequently appears in the statistical literature. In this paper, we propose a novel approach for the multi-response optimization by incorporating fuzzy logic into desirability function. The present method is illustrated by an EDM data of Lin and Lin [2].

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.20-24
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• 2000

This study aimed to develop ITO(Indium Tim Oxide) tin films ablation with a pulsed type KrF excimer laser required for the electrode patterning application in flat panel display into small geometry on a large substrate are. The threshold fluence for ablating ITO on glass substrate is about 0.1 J/㎠. And its value is much smaller than that using 3 .sup rd/ harmonic Nd:YAG laser. Through the optical microscope measurement the surface color of the ablated ITO is changed into dark brown due to increase of surface roughness and transformation of chemical composition by the laser light. The laser-irradiated regions were all found to be electrically isolating from the original surroundings. The XPS analysis showed that the relative surface concentration of Sn and In was essentially unchanged (In:Sn=5:1)after irradiating the KrF excimer laser. Using Al foil made by 2$\^$nd/ harmonic Na:YAG laser, the various ITO patterning is carried out.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1450-1451
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• 2006

In this paper, we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. $Bi_{3.25}La_{0.75}Ti_{3}O_{12}$ (BLT) ferroelectric fan was fabricated by the sol-gel method. Removal rate and non-uniformity (WIWNU%) were examined by change of silica slurries pH(10.3, 11.3, 12.3). Surface roughness of BLT thin films before and after CMP process was inquired into by atomic force microscopy (AFM). Effects of silica slurries pH(10.3, 11.3, 12.3) were investigated on the CMP performance of BLT film by the surface analysis of X-ray photoelectron spectroscopy(XPS).

• Applied Chemistry for Engineering
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• v.8 no.4
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• pp.645-652
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• 1997

Electrochemical characteristics and kinetic parameters of copper ion reduction were investigated with a platinum rotating disk electrode (RDE) in a diffusion controlled region. Reduction of Cu(II) in sulfate had one-step two-xelectron process, while the reduction of Cu(II) in chloride solution was involved two one-electron processes. The transfer coefficient of Cu(II) in sulfate solution was lowest, and the transfer coefficient of Cu(I) in halide solutions had the value of nearly one. In chloride solutions, electrodeposition rate of Cu(II) was about one hundred times faster than Cu(I). Diffusion coefficient increased in the order of Cu(II) in chloride solution, Cu(I) in the iodide, bromide, chloride solution, Cu(II) in sulfate solution. The calculated ionic radii and activation energy for diffusion decreased in the same order as above. Morphological study on the copper electrodeposition indicated that the electrode surface became rougher as both concentration and reduction potential increases, and the roughness of the surface was analyzed with UV/VIS spectrophotometer.

• Journal of dental hygiene science
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• v.18 no.4
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• pp.218-226
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• 2018

The aim of this study was to compare fluoride release and surface changes according to different orthodontic bracket adhesives the application of fluoride products. We used non-fluoridated composite resin Transbond fluoridated composite resins Blugloo and LightBond, resin-modified glass ionomer Rely $X^{TM}$ Luting 2, and conventional glass ionomer Fuji $I^{(R)}$. Fluoride release of five orthodontic bracket adhesives and fluoride release ability after application of three fluoride products (1.23% acidulated phosphate fluoride gel, Tooth Mousse $Plus^{(R)}$, Fluor Protector, and a toothbrush with sodium fluoride-containing toothpaste) were measured using a fluoride electrode that was connected to an ion analyzer. After 4 weeks of fluoride application, the surface roughness and surface morphology were examined using a surface roughness tester and field emission scanning electron microscopy. The amounts of fluoride release were observed not only on application of Tooth Mousse $Plus^{(R)}$ and Fluor Protector on resin-modified glass ionomer Rely $X^{TM}$ Luting 2 and Fuji $I^{(R)}$, but also during tooth brushing using fluoride-containing toothpaste. After application of Tooth Mousse $Plus^{(R)}$, except Transbond XT, the surface roughness increased, and all orthodontic adhesives showed a partial drop of micro-particle filler. On application of 1.23% acidulated phosphate fluoride gel on all orthodontic bracket adhesives, their surface roughness increased. To bond the orthodontic bracket, resin-modified glass ionomer Rely $X^{TM}$ Luting 2 and Fuji $I^{(R)}$ adhesives are highly recommended if the amount of fluoride release is considered to confer a preventative effect on dental caries, and among the fluoride products, Tooth Mousse $Plus^{(R)}$ and Fluor Protector are better than 1.23% acidulated phosphate fluoride gel, and these are expected to prevent dental caries even during tooth brushing with fluoride-containing toothpaste.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.288-289
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• 2011

Indium Tin Oxide (ITO) is a typical highly Transparent Conductive Oxide (TCO) currently used as a transparent electrode material. Most widely used deposition method is the sputtering process for ITO film deposition because it has a high deposition rate, allows accurate control of the film thickness and easy deposition process and high electrical/optical properties. However, to apply high quality ITO thin film in a flexible microelectronic device using a plastic substrate, conventional DC magnetron sputtering (DMS) processed ITO thin film is not suitable because it needs a high temperature thermal annealing process to obtain high optical transmittance and low resistivity, while the generally plastic substrates has low glass transition temperatures. In the room temperature sputtering process, the electrical property degradation of ITO thin film is caused by negative oxygen ions effect. This high energy negative oxygen ions(about over 100eV) can be critical physical bombardment damages against the formation of the ITO thin film, and this damage does not recover in the room temperature process that does not offer thermal annealing. Hence new ITO deposition process that can provide the high electrical/optical properties of the ITO film at room temperature is needed. To solve these limitations we develop the Magnetic Field Shielded Sputtering (MFSS) system. The MFSS is based on DMS and it has the plasma limiter, which compose the permanent magnet array (Fig.1). During the ITO thin film deposition in the MFSS process, the electrons in the plasma are trapped by the magnetic field at the plasma limiters. The plasma limiter, which has a negative potential in the MFSS process, prevents to the damage by negative oxygen ions bombardment, and increases the heat(-) up effect by the Ar ions in the bulk plasma. Fig. 2. shows the electrical properties of the MFSS ITO thin film and DMS ITO thin film at room temperature. With the increase of the sputtering pressure, the resistivity of DMS ITO increases. On the other hand, the resistivity of the MFSS ITO slightly increases and becomes lower than that of the DMS ITO at all sputtering pressures. The lowest resistivity of the DMS ITO is $1.0{\times}10-3{\Omega}{\cdot}cm$ and that of the MFSS ITO is $4.5{\times}10-4{\Omega}{\cdot}cm$. This resistivity difference is caused by the carrier mobility. The carrier mobility of the MFSS ITO is 40 $cm^2/V{\cdot}s$, which is significantly higher than that of the DMS ITO (10 $cm^2/V{\cdot}s$). The low resistivity and high carrier mobility of the MFSS ITO are due to the magnetic field shielded effect. In addition, although not shown in this paper, the roughness of the MFSS ITO thin film is lower than that of the DMS ITO thin film, and TEM, XRD and XPS analysis of the MFSS ITO show the nano-crystalline structure. As a result, the MFSS process can effectively prevent to the high energy negative oxygen ions bombardment and supply activation energies by accelerating Ar ions in the plasma; therefore, high quality ITO can be deposited at room temperature.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.79-84
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• 2009

The electron emission source of triode type has been fabricated using CNT paste. The nano Ag particle and photosensitive polymers were added to the CNT paste. The surface roughness of the CNT emitter was uniform by the back exposure method. The added nano Ag particle improves the adhesion and the electric conductance with small variation in the CNTs and between electrode. After the aging with heat-exhausting, the reliability of the triode CNT electron source was secured in the high voltage and current operation for 12 hours. At this time, the gate leakage current was about 10 % less than.