• Bulletin of the Korean Chemical Society
• /
• v.35 no.8
• /
• pp.2415-2418
• /
• 2014

In this report, the contact resistance between "electrode" and "lead" is investigated for reasonable measurements of samples' resistance in a polypyrrole (PPy) nanowire device. The sample's resistance, including "electrode-lead" contact resistance, shows a decrease as force applied to the interface increases. Moreover, the sample's resistance becomes reasonably similar to, or lower than, values calculated by resistivity of PPy reported in previous studies. The decrease of electrode-lead contact resistance by increasing the applying force was analyzed by using Holm theory: the general equation of relation between contact resistance ($R_H$) of two-metal thin films and contact force ($R_H{\propto}1/\sqrt{F}$). The present investigation can guide a reliable way to minimize electrode-lead contact resistance for reasonable characterization of nanomaterials in a microelectrode device; 80% of the maximum applying force to the junction without deformation of the apparatus shows reasonable values without experimental error.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.348-348
• /
• 2011

Carbon nanotube (CNT) field effect transistors and sensors use CNT as a current channel, of which the resistance varies with the gate voltage or upon molecule adsorption. Since the performance of CNT devices depends very much on the CNT/metal contact resistance, the CNT/electrode contact must be stable and the contact resistance must be small. Depending on the geometry of CNT/electrode contact, it can be categorized into the end-contact, embedded-contact (top-contact), and side-contact (bottom-contact). Because of difficulties in the sample preparation, the end-contact CNT device is seldom practiced. The embedded-contact in which CNT is embedded inside the electrode is desirable due to its rigidness and the low contact resistance. Fabrication of this structure is complicated, however, because each CNT has to be located under a high-resolution microscope and then the electrode is patterned by electron beam lithography. The side-contact is done by depositing CNT electrophoretically or by precipitating on the patterned electrode. Although this contact is fragile and the contact resistance is relatively high, the side-contact by far has been widely practiced because of its simple fabrication process. Here we introduce a simple method to embed CNT inside the electrode while taking advantage of the bottom-contact process. The idea is to utilize a eutectic material as an electrode, which melts at low temperature so that CNT is not damaged while annealing to melt the electrode to embed CNT. The lowering of CNT/Au contact resistance upon annealing at mild temperature has been reported, but the electrode in these studies did not melt and CNT laid on the surface of electrode even after annealing. In our experiment, we used a eutectic Au/Al film that melts at 250$^{\circ}C$. After depositing CNT on the electrode made of an Au/Al thin film, we annealed the sample at 250$^{\circ}C$ in air to induce eutectic melting. As a result, Au-Al alloy grains formed, under which the CNT was embedded to produce a rigid and low resistance contact. The embedded CNT contact was as strong as to tolerate the ultrasonic agitation for 90 s and the current-voltage measurement indicated that the contact resistance was lowered by a factor of 4. By performing standard fabrication process on this CNT-deposited substrate to add another pair of electrodes bridged by CNT in perpendicular direction, we could fabricate a CNT cross junction. Finally, we could conclude that the eutectic alloy electrode is valid for CNT sensors by examine the detection of Au ion which is spontaneously reduced to CNT surface. The device sustatined strong washing process and maintained its detection ability.

• Journal of the Korean Ceramic Society
• /
• v.33 no.11
• /
• pp.1231-1236
• /
• 1996

The electrode resistance of semiconducting PTC BaTiO3 ceramic material was studied in some detail. Comme-rical In-Ag paste In-Ga alloy and electroless plated Ni as well as evaporated Al were chosen as electrode. The contact resistance of electroded samples were measured by both dc resistivity and ac impedance analysis. The aging effect on contact resistance under cyclic loading from -1$0^{\circ}C$ to 85$^{\circ}C$ was also monitored for the prolonged period of time. In case of Al electroded samples the heat treatment and protective coating had effects on the stability against contact resistance degradation. It was also found that the samples with commercial In-Ag paste and electroless plated Ni electrode had good properties of contact resistance against aging.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.10 no.5
• /
• pp.661-669
• /
• 1986

In this study, the resistance spot welding process of an aluminum alloy was analyzed through the numerical simulation including the electric contact resistance and the heat generation in the electrode. The finite element model was used to solve the electro-thermal responses in weld cycles. The resistance of the contact area was represented as the contact element modeling, but the thermal resistance between the contact surfaces was neglected. Welding tests of Alclad 2024-T3 aluminum alloy were made not only to get the input data for the numerical simulation, but also to compare the numerical results. The contact resistance was determined initially by the contact resistance tests and assumed to decay exponentially up to the solidus temperature. The temperature distributions and dynamic resistance obtained numerically were in good agreement with the experimental results. Numerical results revealed that nugget growth depends mainly on the heat generated in the workpiece and its contact area. The heat generated in the electrode has, however, only a little effect on the nugget growth, and the heat generation in the electrode-workpiece interface is initially high but decrease repidly.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.349-349
• /
• 2010

Great performance of many semiconductor devices requirs the use of low-resistance ohmic contact. Typically, transmission line method (TLM) patterns are used to measure the specific contact resistance between silicon and metal. In this works, we investigate contact resistance for metal dependent (Cr/Ag, Ni) using TLM pattern based on silicon-on-insulator (SOI) wafer. The electrode with Ni linearly increases contact resistance as the pattern distance increase from $15{\mu}m$ to $75{\mu}m$ in accumulation part, but non-linearly increase in inversion part. In additional, the electrode with Cr/Ag linearly increases contact resistance as the pattern distance increase from $15{\mu}m$ to $75{\mu}m$ in inversion part, but non-linearly increase in accumulation part.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.235-236
• /
• 2006

The contact resistance and grain boundary potential barrier of ceramic $BaTiO_3$ PTCR were investigated. The electroless plated Ni, evaporated Al, and Ag paste were chosen as electrode materials of PTCR device for comparison analysis before and after heat treatment. The contact resistance of electrode were measured by electrometer (dc), digital multimeter (dc), and LCR meter (ac). In the case of Al electroded samples, the heat treatment and protective oxide layer had high resistance and effect on the stability of PTCR effect against contact resistance degradation, but the Ag-paste had comparably high contact resistance before heat treatment and decreased after heat treatment with safe. On the other hand, the samples with electroless plated Ni electrode had good properties of contact resistance against aging.

• Journal of the Korean Ceramic Society
• /
• v.42 no.12 s.283
• /
• pp.793-799
• /
• 2005

A composite cathode of LSCF$(La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_3)\;and\;GDC\; (Gd_2O_3-doped\;CeO_2:Ce_{0.9}Gd_{0.1}O_{1.95_})$ was characterized in terms of an electrode response, using a point contact in an Yttria-Stabilized Zirconia (YSZ) electrolyte incorporated into AC two-point impedance spectroscopy. The point-contacted configuration amplifies the responses occurring near the YSZ/cathode interface through the aligned point contact on the planar LSCF/GDC electrode. The point contact interface increases the bulk resistance allowing the estimation of the point contact geometry and resolving the electrode-related responses. The resultant impedance spectra are analyzed through an equivalent circuit model constructed by resistors and constant phase elements. The bulk responses can be resolved from the electrode-related portions in terms of spreading resistance. The electrode-related polarizations are measured in terms of temperature and oxygen partial pressure. The modified impedance spectroscopy is discussed in terms of methodology and analytical aspects, toward resolving the electrode-polarization issues in solid oxide fuel cells.

• Journal of Electrochemical Science and Technology
• /
• v.12 no.3
• /
• pp.330-338
• /
• 2021

An integral electrode-bipolar plate assembly, which is composed of electrode, conductive adhesive film (CAF) and bipolar plate, has been developed and evaluated for application with a vanadium redox flow battery (VRB) to decrease contact resistance between electrode and bipolar plate. The CAF, made of EVA (ethylene-vinyl-acetate) material with carbon black or CNT (Carbon Nano Tube), is applied between the electrode and the bipolar plate to enable an integral assembly by adhesion. In order to evaluate the integral assembly of VRB by adhesive film, the resistivity of integral assembly and the performance of single cell were investigated. Thus, it was verified that the integral assembly is applicable to redox flow battery. Through resistance and contact resistance of bare EVA and CAF films on bipolar plate were changed. Among the adhesive films, CAF film coated with carbon black showed the lowest value in through resistance, and CAF film coated with CNT showed the lowest value in contact resistance, respectively. The efficiency of VRB single cell was improved by applying CAF films coated with carbon black and CNT, resulting in the reduced overvoltage in charging process. Therefore, the energy efficiency of both CAF films, about 84%, were improved than that of blank cell, about 79.5 % under current density at 40 mA cm^-2. The energy efficiency of the two cells were similar, but carbon black coated CAF improved the coulomb efficiency and CNT coated CAF improved the voltage efficiency, respectively.

• Journal of the Korean Ceramic Society
• /
• v.26 no.1
• /
• pp.73-80
• /
• 1989

Preparation and characteristics of electroless Ni-P and Ni-B systems for semiconducting ceramics have been investigated as a function of deposit rate, reducing agent and pH variation. The effect of DMAB as ruducing agent is greater than that of sodium hypophosphite. The nickel electrode prepared from the nickel-phosphorus system with sodium hypophosphite shows low contact resistance of 0.99ohm compared with the resistance of 10chm in the electrode prepared from the nickel-boron system with DMAB. The contact resistance increases with increasing pH valuein the nickel-phosphorus system with sodium hypophosphite. The ratio of Ni to P is about 76.0/24.0 for the contact resistance of 0.99ohm in the above system.

• Bulletin of the Korean Chemical Society
• /
• v.35 no.8
• /
• pp.2277-2280
• /
• 2014

The contact properties between gold and poly(3-hexylthiophene) (P3HT) films having either of two distinct molecular orientations and orderings were investigated. Thermal treatment increased the molecular ordering of P3HT and remarkably reduced the contact resistance at the electrode/semiconductor interface, which enhanced the electrical performance. This phenomenon was understood in terms of a small degree of metal penetration into the P3HT film as a result of the thermal treatment, which formed a sharp interface at the contact interface between the gold electrode and the organic semiconductor.