• 한국표면공학회지
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• 제51권5호
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• pp.325-331
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• 2018

Calcium carbonate($CaCO_3$) films were formed by an eco-friendly electro-chemical technique on steel substrates in synthesized distilled water solutions containing $NaHCO_3$, $CaCl_2$ and $MgCl_2$ with different ratio respectively. It was investigated to confirm the effect of $Mg^{2+}$ concentration by Scanning Electron Microscopy(SEM), Energy Dispersive x-ray Spectroscopy(EDS) and X-Ray Diffraction(XRD) respectively. From an experimental result, only calcite crystals were found in solution containing no $Mg^{2+}$. By increasing concentration of $Mg^{2+}$, deposition rate decreased and crystal structure was transformed form calcite to aragonite. In case of including $MgCl_2$ 300mM in synthesized solutions containing $NaHCO_3$, $CaCl_2$ 60mM, it was showed over the 90% of aragonite contents which have quite high deposition rate of aragonite. Also, it was confirmed that $Mg^{2+}$ acted as inhibitor on the films which made transforming from calcite to aragonite.

• 한국정밀공학회지
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• 제30권6호
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• pp.567-572
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• 2013

In many electro-devices, the vacuum process is used as the manufacturing process. However, the vacuum process has a problem, it is difficult to apply to a continuous process such as a R2R(roll to roll) printing process. In this paper, we propose an ESD (electro static deposition) printing process has been used to apply an organic solar cell of thin film forming. ESD is a method of liquid atomization by electrical forces, an electrostatic atomizer sprays micro-drops from the solution injected into the capillary with electrostatic force generated by electric potential of about several tens kV. The organic solar cell based on a P3HT/PCBM active layer and a PEDOT:PSS electron blocking layer prepared from ESD method shows solar-to-electrical conversion efficiency of 1.42% at AM 1.5G 1sun light illumination, while 1.86% efficiency is observed when the ESD deposition of P3HT/PCBM is performed on a spin-coated PEDOT:PSS layer.

• 한국구조물진단유지관리공학회 논문집
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• 제16권6호
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• pp.155-162
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• 2012

해수에 노출된 콘크리트 구조물은 시간의 경과에 따라 철근부식이 야기될 수 있으며, 이는 구조적인 성능저하로 진전된다. 1단계 연구에서 도출된 해수전착시스템의 개발을 통하여 2단계 연구에서는 해수전착 코팅된 철근 및 코팅철근을 사용한 RC 콘크리트 부재의 구조적, 내구적 성능이 평가되었다. 내구적 성능평가에서는 반전위 측정이 수행되었는데, 코팅된 철근은 일반철근의 35%수준의 부식속도를 가지고 있었으므로 높은 내부식성을 확보하고 있었다. 구조실험에서는 직접인장시험, 부착력시험, RC 부재를 이용한 휨 및 전단시험이 수행되었다. 인장강도 시험에서는 3.2%, 부착성능에서는 8.8%의 강도 증가가 코팅된 철근에서 평가되었다. RC보에 대한 실험에서는 최대하중 및 파괴형태는 두가지 경우에서 거의 동일하게 평가되었다. 해수전착된 시편은 철근주위에 콘크리트와 비슷한 화합물(수산화마그네슘, 탄산칼슘)이 형성되므로 부착력 및 강도를 일부 증가시키는 것으로 평가되었다. 해수전착철근은 피로, 내충격성, 장기침지실험 등을 통하여 성능이 입증되면 더욱 활발하게 사용될 것으로 사료된다.

• KEPCO Journal on Electric Power and Energy
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• 제1권1호
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• pp.151-156
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• 2015

In order to improve the properties of high-temperature superconducting wire for superconducting cable system, we optimized the electro-polishing (EP), ion-beam assisted deposition (IBAD), superconducting (SC) layer, and baking (heat) treatment. The buffer layer was deposited on electro-polished substrate with RMS roughness ($R_{RMS}$) less than 5 nm. The IBAD process was carried out at $V_{beam}$: 1100 V and $V_{accel}$: 850 V that resulted in highly crystalline film of $LaMnO_3$. Chemical composition of SC layer is key to higher critical current, and we found that composition can be determined by surface color of SC layer. We adopt a proprietary contorl system based on RGB analysis of the surface and achieved critical current of 150 A/4 mm-width. The proposed baking treatment resulted in decreasing of about 10% of fraction defects.

• 한국진공학회지
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• 제8권4A호
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• pp.482-489
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• 1999

AC PDP(P1asma Display Pane1)s use the mixture of inert gases to generate a discharge inside the display pixels. Impurities such as CO, $CO_2$ and OH inside discharge region may deteriorate the characteristics of PDP operation during long life time of PDP. Electro-negative gas such as CO can cause the sustain pulse amplitude to rise by attaching electrons which will play an important role in the earlier stage of the discharge. MgO film is used to protect the dielectric layer in AC PDP, and is in contact with the free space of display pixel where it is filled with the inert gas mixture. So, MgO film can be a main source of impurities. In this experiment, we observed the change of impurity generation of various MgO films which were deposited by different methods, by using QMS. (quadropole mass spectrometer) The main impurites were $H_2$, CO and $CO_2$. And with the comparison of the TPD (temperature programmed desorption) result, it can be understood that impurity gases are generated by sputtering of MgO surface not by outgassing. Deposition method had effects on the characteristics of the impurity generation. The MgO film manufactured by e-beam evaporation generated more amount of impurity gases than the MgO films manufactured by sputtering or ion-plating. And also heat treatment of MgO film after deposition decreased the magnitude of impurity gas generation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.382-382
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• 2012

CIGS thin films have received great attention as a promising material for solar cells due to their high absorption coefficient, appropriate bandgap, long-term stability, and low cost production. CIGS thin films are deposited by various methods such as co-evaporation, sputtering, spray pyrolysis and electro-deposition. The deposition technique is one of the most important processes in preparing CIGS thin film solar cells. Among these methods, co-evaporation is one of the best technique for obtaining high quality and stoichiometric CIGS films. However, co-evaporation method is known to be unsuitable for commercialization. The sputtering is known to be very effective and feasible process for mass production. In this study, CIGS thin films have prepared by rf magnetron sputtering using a $Cu(In_{1-x}Ga_x)Se_2$ single quaternary target without post deposition selenization. This process has been examined by the effects of deposition parameters on the structural and compositional properties of the films. In addition, we will explore the influences of substrate temperature and additional annealing treatment after deposition on the characteristics of CIGS thin films. The thickness of CIGS films will be measured by Tencor-P1 profiler. The crystalline properties and surface morphology of the films will be analyzed using X-ray diffraction and scanning electron microscopy, respectively. The optical properties of the films will be determined by UV-Visible spectroscopy. Electrical properties of the films will be measured using van der Pauw geometry and Hall effect measurement at room temperature using indium ohmic contacts.

• 한국자원리싸이클링학회:학술대회논문집
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• 한국자원리싸이클링학회 2003년도 추계정기총회 및 국제심포지엄
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• pp.185-189
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• 2003

The effect of surface roughness of the substrate on HF-CVD diamond coating was researched. The surface roughness was changed variously by electro-chemical etching conditions. The etching process acted to remove the metallic cobalt from the WC-Co. Diamond nucleation density was higher in etched the substrate. Therefore, the etching process was effective in both Co-removal and higher surface roughness, leading to the improving the diamond nucleation and deposition.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.675-675
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• 2013

CIGS thin films have received a great attention as a promising material for solar cells due to their high absorption coefficient, appropriate bandgap, long-term stability, and low cost production. CIGS thin films have been deposited by various methods such as co-evaporation, sputtering, spray pyrolysis and electro-deposition. In this study, Cu(In,Ga)Se2(CIGS) thin films were prepared using a single quaternary target by rf magnetron sputtering. The effect of sulfurization on the structural, compositional and electrical properties of the films was examined in order to develop the deposition process. An optimal sulfurization process will be selected for the preparation of CIGS thin films with good structural, optical and electrical properties by applying various sulfurization processes. In addition, the electrical properties of CIGS thin films were investigated by post-deposition annealing process. The carrier concentration of CIG(SSe) thin films after sulfurization was increased from $10^{14}cm^{-3}$ to $10^{16}cm^{-3}$ and the resistivity was increased from 10 ${\Omega}cm$ to $10^3$ ${\Omega}cm$. It is confirmed that CIG(SSe) thin films prepared at optimal deposition condition have similar atomic ratio to the target value after sulfurization.

• 한국재료학회지
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• 제15권10호
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• pp.626-631
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• 2005

GaN-related compound semiconductors were grown on the corrugated interface substrate using a metalorganic chemical vapor deposition system to increase the optical power of white LEDs. The patterning of substrate for enhancing the extraction efficiency was processed using an inductively coupled plasma reactive ion etching system and the surface morphology of the etched sapphire wafer and that of the non-etched surface were investigated using an atomic force microscope. The structural and optical properties of GaN grown on the corrugated interface substrate were characterized by a high-resolution x-ray diffraction, transmission electron microscopy, atomic force microscope and photoluminescence. The roughness of the etched sapphire wafer was higher than that of the non-etched one. The surface of III-nitride films grown on the hemispherically patterned wafer showed the nano-sized pin-holes that were not grown partially. In this case, the leakage current of the LED chip at the reverse bias was abruptly increased. The reason is that the hemispherically patterned region doesn't have (0001) plane that is favor for GaN growth. The lateral growth of the GaN layer grown on (0001) plane located in between the patterns was enhanced by raising the growth temperature ana lowering the reactor pressure resulting in the smooth surface over the patterned region. The crystal quality of GaN on the patterned substrate was also similar with that of GaN on the conventional substrate and no defect was detected in the interface. The optical power of the LED on the patterned substrate was $14\%$ higher than that on the conventional substrate due to the increased extraction efficiency.

• 전기화학회지
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• 제5권4호
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• pp.221-225
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• 2002

Assisted by the highly sensitive confocal microprobe Raman spectrometer and proper surface roughening procedure, the Raman investigation on the adsorption and reaction of methanol was performed on Pt-Ru electrodes with different coverages. A detailed description of the roughening process of the Pt electrodes and the underpotential deposition of the Ru was given. Reasonably good Raman signal reflecting the metal-carbon vibration and CO vibration was detected. The appearance of vibrations of the Ru oxides, together with the existence of Ru-C, Pt-C and CO bands, clearly demonstrates the participation of the bi-functional mechanism during the oxidation process of methanol on Pt-Ru electrodes. The Pt-Ru electrode was found to have a higher catalytic activity over Pt electrodes. This preliminary study shows that electrochemical Raman spectroscopy can be applied to the study of rough electrode surface.