• Title/Summary/Keyword: electro magnetic interference

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Magnetic and Electric Transport Properties of MnTe Thin Film Grown by Molecular Beam Epitaxy (분자선 증착법에 의해 성장한 MnTe 박막의 자기적 및 전기수송 특성)

  • Kim, Woo-Chul;Bae, Sung-Whan;Kim, Sam-Jin;Kim, Chul-Sung;Kim, Kwang-Joo;Yoon, Jung-Bum;Jung, Myung-Hwa
    • Journal of the Korean Magnetics Society
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    • v.17 no.2
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    • pp.81-85
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    • 2007
  • MnTe layers of high crystalline quality were successfully grown on Si(100) : B and Si(111) substrates by molecular beam epitaxy (MBE). Under tellurium-rich condition and the substrate temperature around $400^{\circ}C$, a layer thickness of $700{\AA}$ could be easily obtained with the growth rate of $1.1 {\AA}/s$. We investigated the structural, magnetic and transport properties of MnTe layers by using x-ray diffraction (XRD), superconducting quantum interference device (SQUID) magnetometry, and physical properties measurement system (PPMS). Characterization of MnTe layers on Si(100) : B and Si(111) substrates by XRD revealed a hexagonal structure of polycrystals with lattice parameters, ${\alpha}=4.143{\pm}0.001{\AA}\;and\;c=6.707{\pm}0.001{\AA}$. Investigation of magnetic and transport properties of MnTe films showed anomalies unlike antiferromagnetic powder MnTe. The temperature dependence of the magnetization data taken in zero-field-tooling (ZFC) and field-cooling (FC) conditions indicates three magnetic transitions at around 21, 49, and 210 K as well as the great irreversibility between ZFC and FC magnetization in the films. These anomalies are attributable to a magnetic-elastic coupling in the films. Magnetization measurements indicate ferromagnetic behaviour with hysteresis loops at 5 and 300 K for MnTe polycrystalline film. The coercivity ($H_c$) values at 5 and 300 K are 55 and 44 Oe, respectively. In electro-transport measurements, the temperature dependence of resistivity revealed a noticeable semiconducting behaviours and showed conduction via Mott variable range hopping at low temperatures.

A Development of Dielectric Measurement System for Detecting Physical Parameters of Ground in Subsurface Dam (지하댐 지반 물성치 측정을 위한 유전율 측정 시스템 개발)

  • Kim Man-il;Jeong Gyo-Cheol;Park Chang-Kun
    • The Journal of Engineering Geology
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    • v.14 no.4 s.41
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    • pp.361-369
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    • 2004
  • The authors designed a new technique to measure dielectric constant of a soil media by Frequency Domain Reflectometry (FDR) system and its measurement sensor probe with different length such as 7m, 10cm and 15cm for estimating the variations of dielectric constant. Measurement of dielectric constant of soil material is possible to measure an interference wave generated by between incidence wave and reflection wave which are detected to electro-magnetic wave through the directional coupler at the high frequency range,0.1 to 1.7GHz, by FDR system. The obtained experimental results verified that the technique is very promising for non-destructive and continuous soil volumetric water content measurement monitoring in a laboratory. The relationship between the soil volumetric water content and the dielectric constant of soil media (standard sand) was expressed by a single regression ewe independent of soil texture at a small experimental error. Also the derived regression curve coincided well with that obtained by Topp curve.

A DC-DC Converter Design for OLED Display Module (OLED Display Module용 DC-DC 변환기 설계)

  • Lee, Tae-Yeong;Park, Jeong-Hun;Kim, Jeong-Hoon;Kim, Tae-Hoon;Vu, Cao Tuan;Kim, Jeong-Ho;Ban, Hyeong-Jin;Yang, Gweon;Kim, Hyoung-Gon;Ha, Pan-Bong;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.12 no.3
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    • pp.517-526
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    • 2008
  • A one-chip DC-DC converter circuit for OLED(Organic Light-Emitting Diode) display module of automotive clusters is newly proposed. OLED panel driving voltage circuit, which is a charge-pump type, has improved characteristics in miniaturization, low cost and EMI(Electro-Magnetic Interference) compared with DC-DC converter of PWM(Pulse Width Modulator) type. By using bulk-potential biasing circuit, charge loss due to parasitic PNP BJT formed in charge pumping, is prevented. In addition, the current dissipation in start-up circuit of band-gap reference voltage generator is reduced by 42% and the layout area of ring oscillator is reduced by using a logic voltage VLP in ring oscillator circuit using VDD supply voltage. The driving current of VDD, OLED driving voltage, is over 40mA, which is required in OLED panels. The test chip is being manufactured using $0.25{\mu}m$ high-voltage process and the layout area is $477{\mu}m{\times}653{\mu}m$.