• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.101-101
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• 2007

• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.103-103
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• 2007

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.363-367
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• 2006

We synthesized new blue and bluish green emitting materials by using fully substituted ethylene moieties. Multi-layered EL devices were fabricated with synthesized materials and evaluated in terms of emission color and luminescence efficiency. BPBAPE[EML 4] having high $T_g$ of $155^{\circ}C$ showed luminance and power efficiency of 10.33cd/A and 4.0 lm/W without any doping agent. BTBPPA[EML 5] exhibited 5cd/A and 1.67lm/W efficiency with blue CIE value of (0.165, 0.195).

• Proceedings of the Korean Vacuum Society Conference
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• 2003.02a
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• pp.127-127
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.53.3-53
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• 1998

• Journal of the Semiconductor & Display Technology
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• v.17 no.3
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• pp.10-16
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• 2018

In silicon crystalline PV (Photo Voltaic) industry, PV module or panel electric power is directly related to the companies' profit. Thus, many PV companies have invested and focused on R&D activities to get the higher module power. The main BOM (Bills of Material) on the module consists of PV solar cell, ribbon, EVA (Ethylene-Vinyl Acetate copolymer), glass and back sheet. Based on consistent research efforts on enhancing module power using BOM, there have been increase of around 5 watt per module every year as results. However, there are lack of studies related to enhancing accuracy of measurement. In this study, the enhancing on the metrology is investigated and the improvement shows actually contribution to company's profit. Especially, the measurement issues related to heat and to quasi state of bandgap diagram by EL(Electro Luminescence) are described in this study.

• Journal of Information Display
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• v.8 no.1
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• pp.10-13
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• 2007

We synthesized new blue and bluish green emitting materials by using fully substituted ethylene moieties. Multi-layered EL devices were fabricated with synthesized materials and evaluated in terms of emission color and luminescence efficiency. TBBPE[EML 2] device showed bluish-green CIE value of (0.236, 0.412) and 5.02cd/A at $10mA/cm^2$. BPBBPE[EML 3] device also showed sky-blue CIE value of(0.218, 0.355) and 2.31cd/A at $l0mA/cm^2$.

• Proceedings of the KIEE Conference
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• 2002.06a
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• pp.110-113
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• 2002

Organic EL has been expected to adopt to a new styles of technology that make flat display after Tang & Vanslyke made good electric luminescence device in late 1980s. Their studies based on multi layer structure that consists of emitting layer and carrier transporting layer using proper organic material. In this study. we made multi layer device using $Eu(TTA)_3(phen)$ as a luminescence material by PVD and investigate luminous properties of each device. But oxidization of organic layer by ITO. energy walls in both pole interface. contaminations of ITO surface, importance of protecting membrane, diffusive dimming of light to cathode organic layer. these causes of degradations are common facts of a macromolecule and micromolecule. We think these degradation caused by the impact of heat and electro-chemical factor, bulk effect and interface phenomenon. and raise a question.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.424-425
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• 2006

Zinc sulfide is a well-known host material of phosphor emitting different radiations dependent on different doping impurities of metallic ion. It emits green, blue, orange-yellow or white colors by doping with activators such as copper, silver, manganese and so on. In this study, manganese, copper and chlorine doped ZnS phosphor (ZnS:Mn,Cu,Cl) was synthesized by solid-state reaction method. The optical properties were investigated according to different concentrations of sulfur and activators used during the synthesis process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.1
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• pp.11-14
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• 2012

The AlGaN layer has direct wide bandgaps ranging from 3.4 to 6.2 eV. Nowadays, it is becoming more important to fabricate optical devices in an UV region for the many applications. The high quality AlGaN layer is necessary to establish the UV optical devices. However, the growth of AlGaN layer on GaN layer is difficult due to the lattice mismatch and difference thermal expansion coefficient between GaN layer and AlGaN layer. In this paper, we attempted to grow the LED structure on GaN template by mixed-source HVPE method with multi-sliding boat system. We tried to find the optical and lattice transition of active layer by control the Al content in mixed-source. For the growth of epi layer, the HCl and $NH_3$ gas were flowed over the mixed-source and the carrier gas was $N_2$. The temperature of source zone and growth zone was stabled at 900 and $1090^{\circ}C$, respectively. After the growth, we performed the x-ray diffraction (XRD) and electro luminescence (EL) measurement.