• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.2
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• pp.98-103
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• 2009

An RF test structure is proposed and its applicability is confirmed by measuring DC characteristics and high frequency characteristics. Effective mobility extraction is also performed to confirm the validity of proposed test structure. The area of suggested test structure consumed on wafer was decreased by more than 50% and its characteristics do not be degraded compared with conventional structure.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.65-68
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• 2008

In this study, in order to improve luminous efficacy of AC-PDP, the new facing discharge structure has been suggested. The suggested structure has tilted facing electrode. It shows lower discharge current, higher luminance and luminous efficacy compared with those of reference structure with coplanar electrode structure.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.459-462
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• 2006

In this paper, we proposed a novel TFT-LCD pixel structure to compensate ${\Delta}V_p$, which is a maximum value of 1.82V in conventional pixel structure without compensation. We achieved a maximum value of 60mV in proposed pixel structure by integrating a dummy switch TFT in each pixel. The proposed TFT-LCD pixel structure with a remarkably reduced ${\Delta}V_p$ allows ultra high picture quality AMLCDs.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.69-72
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• 2008

A new electrode structure is proposed in this paper which can increase the discharge efficiency of plasma display panels and also decrease the panel capacitance by decreasing the electrode area effectively. Even with the decreased electrode area, the proposed structure could suppress the requirement for increasing the voltage and improve efficiency by limiting the discharge current.

• Journal of Power Electronics
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• v.17 no.5
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• pp.1256-1267
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• 2017

A fault tolerant structure and its corresponding control strategy for electromagnetic stirring power supplies are proposed in this paper. The topology structure of the electromagnetic stirring power supply contains two-stages. The fore-stage is the PWM rectifier. The back-stage is the fault tolerant inverter, which is a two-phase three-bridge orthogonal inverter circuit while operating normally. When the power switch devices in the inverter are faulty, the structure of the inverter is reconfigured. The two-phase half bridge inverter circuit is constructed with the remaining power switch devices and DC-link capacitors to keep the system operating after cutting the faulty power switch devices from the system. The corresponding control strategy is proposed to let the system work under both normal and fault conditions. The reliability of the system is improved and the requirement of the electromagnetic stirring process is met. Finally, simulation and experimental results verify the feasibility of the proposed fault tolerant structure and corresponding control strategy.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.88-90
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• 2003

We reported an AC PDP structure with grooved front panel dielectric layer. The structure exhibits low breakdown voltage, better luminance, and better endurance to crosstalk in high Xe contents. It also shows less luminous efficacy then conventional structure because of the thinner dielectric layer, but we can apply the higher Xe contents to the grooved dielectric structure, which results in the higher luminous efficacy. We made experiments with the Xe contents from 4 to16% and total gas pressure from 400 to 600Torr. The grooved dielectric structure shows the improvement of 20% luminous efficacy and 17% luminance. The firing voltages lower about 40V at 600Torr and Xe 12, 16%. The discharge characteristics of grooved dielectric structure are verified also with 2D simulation.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.5
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• pp.769-772
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• 2016

In this paper, the overhang structure was applied to the axial flux permanent magnet (AFPM) motor. This paper describes the overhang effect in the AFPM motor. Moreover, the overhang effect was analyzed according to the different overhang length and an optimal overhang structure was proposed. Finally, the proposed structure was applied to design, analysis and experiment of prototype motors. Through the comparison between 3D finite element analysis results and experimental ones, the validity of proposed structure is clarified.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.140-140
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• 2009

The Metal-ferroelectric-semiconductor (MFS) structure has superior advantages such as high density integration and non-destructive read-out operation. However, to obtain the desired electrical characteristics of an MFS structure is difficult because of interfacial reactions between ferroelectric thin film and Si substrate. As an alternative solution, the MFS structure with buffer insulating layer, i.e. metal-ferroelectric-insulator-semiconductor (MFIS), has been proposed to improve the interfacial properties. Insulators investigated as a buffer insulator in a MFIS structure, include $Ta_2O_5$, $HfO_2$, and $ZrO_2$ which are mainly high-k dielectrics. In this study, we prepared the Dy-doped $La_2O_3$ solution buffer layer as an insulator. To form a Dy-doped $La_2O_3$ buffer layer, the solution was spin-coated on p-type Si(100) wafer. The coated Dy-doped $La_2O_3$ films were annealed at various temperatures by rapid thermal annealing (RTA). To evaluate electrical properties, Au electrodes were thermally evaporated onto the surface of the samples. Finally, we observed the surface morphology and crystallization quality of the Dy-doped $La_2O_3$ on Si using atomic force microscopy (AFM) and x-ray diffractometer (XRD), respectively. To evaluate electrical properties, the capacitance-voltage (C-V) and current density-voltage (J-V) characteristics of Au/Dy-doped La2O3/Si structure were measured.

• Journal of Electrical Engineering and Technology
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• v.9 no.6
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• pp.1995-2003
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• 2014

Power semiconductor devices have been the major backbone for high-power electronic devices. One of important parameters in view of power semiconductor devices often characterize with a high breakdown voltage. Therefore, many efforts have been made, since the development of the Insulated Gate Bipolar Transistor (IGBT), toward having higher level of breakdown voltage, whereby the typical design thereof is focused on the structure using the field ring. In this study, in an attempt to make up more optimized field-ring structure, the characteristics of the field ring were investigated with the use of theoretical arithmetic model and methodologically the design of experiments (DOE). In addition, the IGBT having the field-ring structure was designed via simulation based on the finding from the above, the result of which was also analyzed. Lastly, the current study described the trench field-ring structure taking advantages of trench-etching process having the improved field-ring structure, not as simple as the conventional one. As a result of the simulation, it was found that the improved trench field-ring structure leads to more desirable voltage divider than relying on the conventional field-ring structure.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.2043-2045
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• 2004

This thesis complemented the weak points that the existing theses did not represented a phase characteristic as the equivalent circuit by applying 4-port simulation to DGS (Defected Ground Structure) characteristic and an equivalent circuit, which are the transmission line structure that has the defect made in the ground surface. We used a distribute device and a lumped device, obtained the equivalent circuit by applying the structure of balun to a discontinuous part. An indicated DGS (Defected Ground structure) is a dumbbells-shaped single defect, we indicated satisfying a magnitude and phase characteristics by applying this equivalent circuit.