• 전기학회논문지
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• 제65권9호
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• pp.1564-1570
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• 2016

This study proposes a newly modified form of existing ground electrodes in order to secure trust of grounding system for large current caused by a stroke of lightning. Proposed planar earth structure has a several needle electrodes around a circular rod and 4 plane electrodes in all directions. The plane electrodes are fused with the insulator on the linear rod, so that they're electrically isolated. The concept is to increase the discharge amount of earth structure using multiple discharge paths like needle and plane electrodes. To check the discharge efficiency of the suggested scheme, the discharge currents are compared with typically used two kinds of ground rods. To ensure accuracy in the measurement of the discharge current, the same material was used for the comparison model. Also, the ground resistance are simulated by CDEGS commercial software and the results are compared with measured data. Based on this kind of experimental study, the suggested ground rod can be used when designing a ground system or when constructing a ground system at the site.

• 한국전기전자재료학회논문지
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• 제28권1호
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• pp.51-56
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• 2015

The object of this study is to obtain the optimum mix proportion of halogen free compound with flame resistance and, for the purpose, thermal/electrical characteristics test are conducted using compatibilizing agents, flame resistance agents, hydroxide aluminum, sunscreen, antioxidant and silicon oil on the base resin of linear low density polyethylene (LLDPE), Ethylene vinyl acetate copolymer (EVA). Existing compound method accompanies many requirements to be satisfied including a lot of addition of flame resistance agents, prohibition of impact on mixing capability with base and property and etc. In this study, different from the existing method, the optimum mix proportion is determined and experimented by adding nano clay. Oxygen index test shows no difference between specimens while T-6, T-9 shows oxygen index of 29[%] and 26[%], respectively. This is concluded that hydroxide aluminum, which is a flame resistance agent, leads low oxygen index. From UL94-V vertical flame resistance test, the combustion behavior is determined as V-0, Fail based on UL94-V decision criteria. Viscometry shows low measurements in specimens with separate addition of compatibilizing agents or nano clay. Volume resistivity test shows low measurement mainly in specimens without compatibilizing agents. Therefore, with the flame resistance compound shows better performance for thermal/electrical property and the optimum mix proportion are achieved among many existing materials.

• Journal of Electrical Engineering and Technology
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• 제9권2호
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• pp.686-694
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• 2014

A power semiconductor device, usually used as a switch or rectifier, is very significant in the modern power industry. The power semiconductor, in terms of its physical properties, requires a high breakdown voltage to turn off, a low on-state resistance to reduce static loss, and a fast switching speed to reduce dynamic loss. Among those parameters, the breakdown voltage and on-state resistance rely on the doping concentration of the drift region in the power semiconductor, this effect can be more important for a higher voltage device. Although the low doping concentration in the drift region increases the breakdown voltage, the on-state resistance that is increased along with it makes the static loss characteristic deteriorate. On the other hand, although the high doping concentration in the drift region reduces on-state resistance, the breakdown voltage is decreased, which limits the scope of its applications. This addresses the fact that breakdown voltage and on-state resistance are in a trade-off relationship with a parameter of the doping concentration in the drift region. Such a trade-off relationship is a hindrance to the development of power semiconductor devices that have idealistic characteristics. In this study, a novel structure is proposed for the Insulated Gate Bipolar Transistor (IGBT) device that uses conductivity modulation, which makes it possible to increase the breakdown voltage without changing the on-state resistance through use of a P-floating layer. More specifically in the proposed IGBT structure, a P-floating layer was inserted into the drift region, which results in an alleviation of the trade-off relationship between the on-state resistance and the breakdown voltage. The increase of breakdown voltage in the proposed IGBT structure has been analyzed both theoretically and through simulations, and it is verified through measurement of actual samples.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.69-70
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• 2006

A detailed Investigation of cell structure and electrical characteristic in chalcogenide-based phase-change random access memory(PRAM) devices is presented. We used compound of Ge-Sb-Te material for phase-change cell. A novel bottom electrode structure and manufacture are described. We used heat radiator structure for improved reset characteristic. A resistance change measurement is performed on the test chip. From the resistance change, we could observe faster reset characteristic.

• Journal of Information Processing Systems
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• 제16권2호
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• pp.394-405
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• 2020

The parameters of transmission lines have an influence on the electromagnetic environment surrounding the line. This paper proposes a method based on phasor measurement unit (PMU) and supervisory control and data acquisition (SCADA) to achieve online estimation of transmission line full parameters, such as resistance, reactance and susceptance. The proposed full parameter estimation method is compared with the traditional method of estimating resistance independently based on SCADA system. Then, the electromagnetic environment is analyzed based on the different parameter estimation methods. The example results illustrate that online estimation of transmission line full parameters is more accurate in the analysis of electromagnetic environment, which further confirms its necessity and significance in engineering application.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1874-1876
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• 2000

In this paper, the effects of the positions of the current probe on the measurements of the ground resistanc, and potential gradients with fall-of-potential method are described, and the testing techniques to minimize the measuring errors are proposed. The fall-of-potential method is theoretically based on the potential and current measuring principle and the measuring error is primarily caused by the position of the measuring auxiliary probes. The ground resistance is calculated by applying the 61.8% lute using fall-of-potential method.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• 제5B권3호
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• pp.283-288
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• 2005

A portable primary inductance standard set that includes a Maxwell-Wien bridge and a 10 mH standard inductor installed in a thermostat has been developed at KRISS. Two auxiliary resistance capacitance networks (analogous to a 'Wagner ground') provide excellent stability of the bridge balance and impose less strict requirements on the components of these networks. Removable capacitance and ac-dc resistance standards used in the bridge arms made it possible to reproduce 10 mH and 100 mH inductance values in the frequency range of 500 Hz to 3 kHz. From investigations of this standard and preliminary comparison with VNIIM (D. I. Mendeleyev Institute for Metrology), the results have demonstrated that the bridge can be used as a part of the transportable inductance standard with a measurement uncertainty within (1-3) $\mu$H/H at frequencies of 1 kHz and 1.6 kHz. The application of the bridge as a constituent part of the transportable standard gives us an opportunity to eliminate the influence of the standard inductors.

• Nuclear Engineering and Technology
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• 제56권2호
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• pp.402-409
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• 2024

High energy neutron irradiations impact on structural and electrical properties of alumina are studied with particular emphasis on real time in-situ radiation induced conductivity measurement in low flux region. Polycrystalline Al₂O₃ samples are subjected to high energy neutrons produced from D-T neutron generator and Am-Be neutron source. 14 MeV neutrons from D-T generator are chosen to study the role of fast neutron irradiation in the structural modification of samples. Real time in-situ electrical measurement is performed to investigate the change in insulation resistance of Al₂O₃ due to radiation induced conductivity at low flux regime. During neutron irradiation, a significant transient decrease in insulation resistance is observed which recovers relative higher value just after neutron exposure is switched off. XRD results of 14 MeV neutron irradiated samples suggest annealing effect. Impact of relatively low energy neutrons on the structural properties is also studied using Am-Be neutrons. In this case, clustering is observed on the sample surface after prolonged neutron exposure. The structural characterizations of pristine and irradiated Al₂O₃ samples are performed using XRD, SEM, and EDX. The results from these characterizations are analysed and interpreted in the manuscript.

• 전기의세계
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• 제22권4호
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• pp.7-10
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• 1973

The characteristics of all the instruments and materials used in atomic industry is changed due to radiation damages by the effects of radiation activities. In this study, when the Carbon Resistor, main element of electrical circuits, is irradiated by Gamma-Ray, variations in its electrical properties have been investigated. The following results are obtained: 1) The resistance value in Carbon Resistor is exponentially increased as the quantity of irradiation by Gamma-Ray is increased, but in case of more than 10$^{6}$ R/hr. of quantity of irradiation it has saturated-state value. 2) The rate of change inrestistance value has been independent on the intensity of Gamma-Ray source when Carbon Resistor is irradiated in the same quantity of irradiation. 3) The resistance value in irradiated Carbon Resistor has not been varied with elapse of time. 4) The more the distance from the Carbon Resistor to the Gamma-Ray source the more greatly the resistance value is decreased and that it has been shown that the more quantity of irradiation by Gamma-Ray, the greater the rate of decrease in resistance value. Through the above results it has been concluded that the measurement values obtained by the high-precision instruments in the radiation field have to be corrected with proper consideration to radiation damages.

• Transactions on Electrical and Electronic Materials
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• 제9권3호
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• pp.101-104
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• 2008

The electrical properties and microstructure of nitrogen-doped poly 3C-SiC films were studied according to different thickness. Poly 3C-SiC films were deposited by LPCVD(low pressure chemical vapor deposition) at $900^{\circ}C$ and 4 Torr using $SiH_2Cl_2$ (100 %, 35 sccm) and $C_2H_2$ (5 % in $H_2$, 180 sccm) as the Si and C precursors, and $NH_3$ (5 % in $H_2$, 64 sccm) as the dopant source gas. The resistivity of the 3C-SiC films with $1,530{\AA}$ of thickness was $32.7{\Omega}-cm$ and decreased to $0.0129{\Omega}-cm$ at $16,963{\AA}$. In XRD spectra, 3C-SiC is so highly oriented along the (1 1 1) plane at $2{\theta}=35.7^{\circ}$ that other peaks corresponding to SiC orientations are not presented. The measurement of resistance variations according to different thickness were carried out in the $25^{\circ}C$ to $350^{\circ}C$ temperature range. While the size of resistance variation decreases with increasing the films thickness, the linearity of resistance variation improved.