• 한국전기전자재료학회논문지
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• 제36권1호
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• pp.81-87
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• 2023

Heaters using the resistance heating principle are used in various industrial fields that require heat and are also essentially used in bidet among small home appliances. A planar heater and a coil-inserted heater mounted on a conventional commercially used bidet have disadvantages and limitations of complicated manufacturing process and local heating. In this study, silver-palladium (Ag-Pd) powder material was used for a screen-printing process that is more advantageous in achieving simplification than the existing process, and a rod-type heater for bidet was manufactured. The on-off cycle test under actual conditions was conducted to confirm the durability and the capability of the fabricated heater, and the fabricated heater operated more than 2,600 on-off cycles, which means it could be applied for a commercial product. In addition, through the on-off cycles under harsh conditions, the cause of failure was identified after the test that the durability limit temperature of the heater was 850℃. Through Ag-Pd rod heater in this study, it is expected to contribute to the efficient development of electrode materials for heaters and the improvement of the durability of heaters in the future.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.456-456
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• 2009

Boron doping on an n-type Si wafer is requisite process for IBC (Interdigitated Back Contact) solar cells. Fiber laser annealing is one of boron doping methods. For the boron doping, uniformly coated or deposited film is highly required. Plasma enhanced chemical vapor deposition (PECVD) method provides a uniform dopant film or layer which can facilitate doping. Because amorphous silicon layer absorption range for the wavelength of fiber laser does not match well for the direct annealing. In this study, to enhance thermal affection on the existing p-a-Si:H layer, a ${\mu}c$-Si:H intrinsic layer was deposited on the p-a-Si:H layer additionally by PECVD. To improve heat transfer rate to the amorphous silicon layer, and as heating both sides and protecting boron eliminating from the amorphous silicon layer. For p-a-Si:H layer with the ratio of $SiH_4$ : $B_2H_6$ : $H_2$ = 30 : 30 : 120, at $200^{\circ}C$, 50 W, 0.2 Torr for 30 minutes, and for ${\mu}c$-Si:H intrinsic layer, $SiH_4$ : $H_2$ = 10 : 300, at $200^{\circ}C$, 30 W, 0.5 Torr for 60 minutes, 2 cm $\times$ 2 cm size wafers were used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 20 ~ 27 % of power, 150 ~ 160 kHz, 20 ~ 50 mm/s of marking speed, and $10\;{\sim}\;50 {\mu}m$ spacing with continuous wave mode of scanner lens showed the correlation between lifetime and sheet resistance as $100\;{\Omega}/sq$ and $11.8\;{\mu}s$ vs. $17\;{\Omega}/sq$ and $8.2\;{\mu}s$. Comparing to the singly deposited p-a-Si:H layer case, the additional ${\mu}c$-Si:H layer for doping resulted in no trade-offs, but showed slight improvement of both lifetime and sheet resistance, however sheet resistance might be confined by the additional intrinsic layer. This might come from the ineffective crystallization of amorphous silicon layer. For the additional layer case, lifetime and sheet resistance were measured as $84.8\;{\Omega}/sq$ and $11.09\;{\mu}s$ vs. $79.8\;{\Omega}/sq$ and $11.93\;{\mu}s$. The co-existence of $n^+$layeronthesamesurfaceandeliminating the laser damage should be taken into account for an IBC solar cell structure. Heavily doped uniform boron layer by fiber laser brings not only basic and essential conditions for the beginning step of IBC solar cell fabrication processes, but also the controllable doping concentration and depth that can be established according to the deposition conditions of layers.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 B
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• pp.1038-1040
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• 2001

A half-bridge type resonant current injection type high frequency resonant inverter using ZVS(Zero-Voltage-Switching) used as power source of induction heating at high frequency is presented in this paper. This proposed inverter can reduce distribution of the switching current because of using the current of serial resonant circuit to the input current of the parallel one. The analysis of the proposed circuit is generally described by using the normalized parameters, the principle of basic operating and the its characteristics are estimated by the parameters such as switching frequency and load resistance. According to the calculated characteristics value, this paper proves the validity of theoretical analysis through the Pspice.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 정기총회 및 추계학술대회 논문집 학회본부
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• pp.82-84
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• 1993

A method for simulating general characteristics and temperature characteristics of magnetizing fixture coil of the capacitor discharge impulse magnetizer-magnetizing fixture system using SPICE is presented. This method has been developed which can aid the design, understanding and inexpensive, time-saving of magnetizing circuit. As the detailed characteristics of magnetizing circuit can be obtained, the efficient design of the magnetizing circuit which produce desired magnet will be possible using our SPICE modeling. Especially, The knowledge of the temperature of the magnetizing fixture is very important to forecast the characteristics of the magnetizing circuits tinder different conditions. The capacitor voltage was not raised above 810[V] to protect the magnetizing fixture from excessive heating. The temperature estimation method uses multi-lumped model with equivalent thermal resistance and thermal capacitance.

• 동력기계공학회지
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• 제9권4호
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• pp.90-95
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• 2005

The wire-arc process is a low-cost thermal spray method simply utilizes electrical energy to melt the feedstock wire. It is more userful for field applications, especially to coat large surface area. In this paper, a special Fe-based alloy coatings by using the wire-arc process were developed. Nanoscale composite coatings were achieved either during spraying or through a post heat treatment. As-sprayed Fe-based alloy coatings had been an amorphous matrix structure, after heating to $700^{\circ}C$ for 10 minutes a solid state transformation occurred in the some fraction of amorphous matrix which resulted in the formation of nanostructured recrystallized phase. Scanning electron microscopy (SEM) and field emotional scanning electron microscope(FE-SEM) were applied to analyze the microstructure of the coatings. Additionally hardness and bend resistance of the Fe-based alloy coatings were examined, and these results were compared with those of partially stabilized zirconia(PSZ) coatings by using the plasma spray process.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2009년도 춘계학술발표논문집
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• pp.450-453
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• 2009

Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites. Compare economic estimation of SiC ceramic heater with sheathe heater are as followings. (1) Temperature rising time of sheath heater is 1.1 times faster than SiC ceramic heater. (2) Heating insulation of SiC ceramic heater is 2.7 times larger than sheath heater. If SiC ceramic heater is one body type of a product application, contact resistance will decrease. I think that temperature initial rising time is faster than now. The more SiC ceramic heater is used for a long time, the more economic benefit is larger in the view point of heat insulation.

• 대한설비공학회:학술대회논문집
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• 대한설비공학회 2007년도 동계학술발표대회 논문집
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• pp.640-645
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• 2007

An experimental apparatus to show the hot spot cooling of an IC chip using a thermoelectric cooler is developed. The spot heating in very small area is achieved by the applying CO$_2$ laser source and temperatures are measured using miniature thermocouples. The active effects of thermoelectric cooler on the hot spot cooling system such as rapid heat spreading in the chip and lowering the peak temperature around the hot spot region are investigated. The experimental results are simulated numerically using the TAS program, which the performance characteristics such as Seebeck coefficient, electrical resistance and thermal conductivity of the thermoelectric cooler are searched by trial and error. Good agreements are obtained between numerical and experimental results if the appropriate performance data of the thermoelectric cooler are given.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 학술대회 논문집 전문대학교육위원
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• pp.184-186
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• 2002

$ITO_{(n)}/Si_{(p)}$ solar cell was fabricated by vaccum deposition method under the resistance heating with substrate temperature kept about 200[$^{\circ}C$] and than their properties are investigated. The cell charateristics can be improved by annealing but are deteriorated at temperature above 650[$^{\circ}C$] for longer than 15[min].

• Journal of the Optical Society of Korea
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• 제16권4호
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• pp.349-353
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• 2012

Uniform spreading of injection current in light-emitting diodes (LEDs) is one of the crucial requirements for better device performances. It is reported that non-uniform current spreading leads to low output power, high current crowding, heating, and reliability degradation of the LED device. This paper reports on the effects of different surface and electrode geometries in the LEDs. To increase the output power of LEDs and reduce the series resistance, a rectangular-type LED (RT-LED) with a centered island cathode has been fabricated and investigated by comparison with a conventional LED (CV-LED). The performances of RT-LEDs were prominently enhanced via uniform current spreading and low current crowding. Performances in terms of increased output power and lower forward voltage of simulated RT-LEDs are much superior to those of CV-LEDs. Based on these results, we investigated the correlation between device geometries and optical characteristics through the fabricated CV and RT-LEDs. The measured output power and forward voltage of the RT-LEDs at 100 mA are 64.7% higher and 8% smaller compared with those of the CV-LEDs.

• 한국세라믹학회지
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• 제47권5호
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• pp.467-473
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• 2010

The objective of this study is to prepare lead-free thick film resistor (TFR) paste compatible with AlN substrate for hybrid microelectronics. For this purpose, CaO-ZnO-$B_2O_3-Al_2O_3-SiO_2$ glass system was chosen as a sintering aid of $RuO_2$. The effects of the weight ratio of CaO to ZnO in glass composition, the glass content and the sintering temperature on the electrical properties of TFR were investigated. $RuO_2$ as a conductive and glass powder were dispersed in an organic binder to obtain printable paste and then thick-film was formed by screen printing, followed by sintering at the range between $750^{\circ}C$ and $900^{\circ}C$ for 10 min with a heating rate of $50^{\circ}C$/min in an ambient atmosphere. The addition of ZnO to glass composition and sintering at higher temperature resulted in increasing sheet resistance and decreasing temperature coefficient of resistance. Using $RuO_2$-based resistor paste containing 40 wt%glass of CaO-20.5%ZnO-25%$B_2O_3$-7%$Al_2O_3$-15%$SiO_2$ composition, it is possible to produce thick film resistor on AlN substrate with sheet resistance of $10.6\Omega/\spuare$ and the temperature coefficient of resistance of 702ppm/$^{\circ}C$ after sintering at $850^{\circ}C$.