• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.4
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• pp.273-279
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• 2000

Electrical repair method which has replaced laser repair method can replace defective cell by redundancy’s in the redundancy scheme of conventional high density memory. This electrical repair circuit consists of the antifuse program/read/latch circuits, a clock generator a negative voltage generator a power-up pulse circuit a special address mux and etc. The measured program voltage of made antifuses was 7.2~7.5V and the resistance of programmed antifuses was below 500 Ω. The period of clock generator was about 30 ns. The output voltage of a negative voltage generator was about 4.3 V and the current capacity was maximum 825 $mutextrm{A}$. An antifuse was programmed using by the electric potential difference between supply-voltage (3.3 V) and output voltage generator. The output pulse width of a power-up pulse circuit was 30 ns ~ 1$mutextrm{s}$ with the variation of power-up time. The programmed antifuse resistance required below 44 ㏀ from the simulation of antifuse program/read/latch circuit. Therefore the electrical repair circuit behaved safely and the yield of high densitymemory will be increased by using the circuit.

• Journal of Practical Engineering Education
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• v.8 no.2
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• pp.91-94
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• 2016

This study is focused on the development and application of automotive lighting system simulator device to help understanding of the repair and overhaul, electrical instrumentation and automotive circuit checks the contents of the automotive electrical system. The purpose of this study is to define the circuit numeracy, circuit repair preparation skills, detachable power, circuit analysis capabilities, inspection and measurement capability, and repair (problem solving) skills, through the cultivation of clean ability to increase the understanding of electrical equipment maintenance circuitry to verify the improvement of the repair. Automotive electrical device requires understanding of the invisible parts, and understanding of the various symbols and complex circuitry to measure the basic checks and repair are indispensable. This paper would likely contribute to help students to gain more interest in the fields that they feel difficult such as basic skills which necessary to cultivate a variety of electrical equipment fault diagnosis of the basic knowledge needed for electric cars practical.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.8
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• pp.1877-1886
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• 2010

In this paper, we design a redundancy control circuit for 1T-SRAM repair using electrical fuse programming. We propose a dual port eFuse cell to provide high program power to the eFuse and to reduce the read current of the cell by using an external program supply voltage when the supply power is low. The proposed dual port eFuse cell is designed to store its programmed datum into a D-latch automatically in the power-on read mode. The layout area of an address comparison circuit which compares a memory repair address with a memory access address is reduced approximately 19% by using dynamic pseudo NMOS logic instead of CMOS logic. Also, the layout size of the designed redundancy control circuit for 1T-SRAM repair using electrical fuse programming with Dongbu HiTek's $0.11{\mu}m$ mixed signal process is $249.02 {\times}225.04{\mu}m^{2}$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.85-92
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• 2007

With the development of the memory design and process technology, the production of high-density memory has become a large scale industry. Since these memories require complicated designs and accurate manufacturing processes, It is possible to exist more defects. Therefore, in order to analyze the defects, repair them and fix the problems in the manufacturing process, memory repair using BISR(Built-In Self-Repair) circuit is recently focused. This paper presents an efficient memory BISR architecture that uses spare memories effectively. The proposed BISR architecture utilizes the additional storage space named 'sign bit' for the repair of memories. This shows the better performance compared with the previous works.

• Proceedings of the KSR Conference
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• 2000.05a
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• pp.188-194
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• 2000

This study is about fault detection and fault area detection of LV circuit in Cab Cubicle system which have control of train to keep safety in High Speed Train. LV circuit is operated with diagnosis system like safety system. In this paper, we suggest a design and an implementation method to detect fault or to detect fault area automatically about LV circuit. The implemented system is tested successfully after implementation of some function. We expect reduction to diagnosis area or repair time by fault area module

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.5
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• pp.48-55
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• 2010

As the complexity and the clock speed of semiconductor integrated circuits increase, silicon validation becomes important. In this research, we developed new post-silicon repair & revision techniques to reduce cost and time-to-market. Spare cells are fabricated with the original design and are used for repair when necessary. The interconnections are modified by repair layer revision. The repair cost can be reduced by logic partitioning. Experimental results show that these techniques are effective for low-cost and fast turnaround repair.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.54-60
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• 2007

This paper proposes a built-in-self-repair (BISR) structure using 2-dimensional spare memory to effectively self-repair faults of an embedded memory. In case of multiple faults in the same row (column) of an embedded memory, the previous method using 1-D spare column (row) memory needs the same number of spare memory columns (rows) as the number of faults to self-repair them. while the new method using 2-D spare memory needs only one spare row (column) to self-repair them. Also, the virtual divided memory is adopted to be able to self-repair using not a full spare column memory but the only partial spare column memory corresponding to the faults. A self-repair circuit with $64\times1-bit$ core memory and $2\times8$ 2-D spare memory is designed. And the circuit includes a built-in-self-test block using the 13N March algorithm. The circuit has been implemented using the $0.25{\mu}m$ MagnaChip CMOS process and has $1.1\times0.7mm^2$ chip area with 10,658 transistors.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.4
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• pp.216-231
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• 2001

Several methods for improving device yields and characteristics have been studied by IC manufacturers, as the options for programming components become diversified through the introduction of novel processes. Especially, the sequential repair steps on wafer level and package level are essentially required in DRAMs to improve the yield. Several repair methods for DRAMs are reviewed in this paper. They include the optical methods (laser-fuse, laser-antifuse) and the electrical methods (electrical-fuse, ONO-antifuse). Theses methods can also be categorized into the wafer-level(on wafer) and the package-level(post-package) repair methods. Although the wafer-level laser-fuse repair method is the most widely used up to now, the package-level antifuse repair method is becoming an essential auxiliary technique for its advantage in terms of cost and design efficiency. The advantages of the package-level antifuse method are discussed in this paper with the measured data of manufactured devices. With devices based on several processes, it was verified that the antifuse repair method can improve the net yield by more than 2%~3%. Finally, as an illustration of the usefulness of the package-level antifuse repair method, the repair method was applied to the replica delay circuit of DLL to get the decrease of clock skew from 55ps to 9ps.

• Proceedings of the IEEK Conference
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• 2002.07c
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• pp.2000-2003
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• 2002

In this paper, an IC chip of a cell- network type circuit constructed with 1-dimensional chaos circuits is reported. The circuit, is designed by sing switched-current (Sl) techniques. In the proposed circuit, by controlling connections of cells, an S- dimensional circuit (S ＝ 1, 2, 3,…) and a synchronization system can be constructed easily. Furthermore, in spite of faults of a few cells, the circuit can reconstruct above-mentioned systems only to change connections of cells. This feature will open up new vista for engineering applications which are used in a distance place such as space, deep sea, etc. since it is difficult to repair faults of these application systems. To investigate the characteristics of the circuit, SPICE simulations are performed. The VLSI chip is fabricated from the layout design using a CAD tool, MAGIC. The proposed circuit is integrable by a standard 1.2 $\mu\textrm{m}$ CMOS technology.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.657-662
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• 2005

In this study, the deposition of micrometer-scale metallic interconnects on LCD glass for the repair of open-circuit type defects is investigated. Although there had been a few studies Since 1980 s for the deposition of metallic interconnects by laser-induced chemical vapor deposition, those studies mostly used continuous wave lasers. In this work, a third harmonic Nd:YLF laser (351nm) of high repetition rates, up to 10 KHz, was used as the illumination source and $W(CO)_6$ was selected as the precursor. General characteristics of the metal deposit (tungsten) such as height, width, morphology as well as electrical properties were examined for various process conditions. Height of the deposited tungsten lines ranged from 35 to 500 nm depending on laser power and scan speed while the width was controlled between $3\~50{\mu}$ using a slit placed in the beam path. The resistivity of the deposited tungsten lines was measured to be below 1 $O\cdot{\mu}m$, which is an acceptable value according to the manufacturing standard. The tungsten lines produced at high scan speed had good surface morphology with little particles around the patterns. Experimental results demonstrated that it is likely that the deposit forms through a hybrid process, namely through the combination of photolytic and pyrolytic mechanisms.