• Title/Summary/Keyword: electrical parameters.

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Vector Control for Linear Induction Motor using Neural Network (신경회로망을 이용한 선형 유도전동기의 벡터제어)

  • Kwon, Byung-Il;Woo, Kyong-Il;Park, Seung-Chan
    • Proceedings of the KIEE Conference
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    • 1996.07a
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    • pp.247-249
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    • 1996
  • The indirect vector control method is generally used for variable speed control of induction motor, due to its excellent response characteristics. However, this is very sensitive to the variation of motor parameters caused by temperature rise and magnetic saturation and so on. Linear induction motor(LIM) has asymetric phase circuit parameters because of its special phenomena, end effects. So this paper describes on the method that identifies the circuit parameters using neural network in the vector control of LIM.

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On the Local Identifiability of Load Model Parameters in Measurement-based Approach

  • Choi, Byoung-Kon;Chiang, Hsiao-Dong
    • Journal of Electrical Engineering and Technology
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    • v.4 no.2
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    • pp.149-158
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    • 2009
  • It is important to derive reliable parameter values in the measurement-based load model development of electric power systems. However parameter estimation tasks, in practice, often face the parameter identifiability issue; whether or not the model parameters can be estimated with a given input-output data set in reliable manner. This paper introduces concepts and practical definitions of the local identifiability of model parameters. A posteriori local identifiability is defined in the sense of nonlinear least squares. As numerical examples, local identifiability of third-order induction motor (IM) model and a Z-induction motor (Z-IM) model is studied. It is shown that parameter ill-conditioning can significantly affect on reliable parameter estimation task. Numerical studies show that local identifiability can be quite sensitive to input data and a given local solution. Finally, several countermeasures are proposed to overcome ill-conditioning problem in measurement-based load modeling.

Chromosome Karyotype Classification using Multi-Step Multi-Layer Artificial Neural Network (다단계 다층 인공 신경회로망을 이용한 염색체 핵형 분류)

  • Chang, Yong-Hoon;Lee, Kwon-Soon;Chong, Hyeng-Hwan;Jun, Kye-Rok
    • Proceedings of the KOSOMBE Conference
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    • v.1995 no.11
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    • pp.197-200
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    • 1995
  • In this paper, we proposed the multi-step multi-layer artificial neural network(MMANN) to classify the chromosome, Which is used as a chromosome pattern classifier after learning. We extracted three chromosome morphological feature parameters such as centromeric index, relative length ratio, and relative area ratio by means of preprocessing method from ten chromosome images. The feature parameters of five chromosome images were used to learn neural network and the rest of them were used to classify the chromosome images. The experiment results show that the chromosome classification error is reduced much more, comparing with less feature parameters than that of the other researchers.

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Dynamic Analysis of Transverse type Switched Reluctance Motor considering nolinear magnetic equivalent circuit (비선형 자기회로를 고려한 횡자속형 SRM 동특성해석)

  • Kim, Kyung-Ho;Cho, Yun-Hyun;Jeoung, Yeon-Ho;Kim, Jong-Mu;Kang, Do-Hyun
    • Proceedings of the KIEE Conference
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    • 2001.07b
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    • pp.930-932
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    • 2001
  • This paper is proposed the modeling and computational methods for estimating the steady and dynamic characteristics of a transverse flux type SRM. Prediction of the steady and dynamic characteristics state of a switched reluctance motor (SRM) drive can be quite involved because of complex interdependent influences between motor parameters and excitation. To obtain characteristics parameters of the transverse flux type SRM which is considered the magnetic non-linearity phenomena, the magnetic equivalent parameters of SRM are computed by the finite element method as functions of the input current and angular displacement. Dynamic characteristics of the designed transverse flux type SRM is simulated and estimated by Matlab/simlunk.

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Structural analysis of $Al_{x}Ga_{1-x}As/In_{y}Ga_{1-y}$As P-HEMTs reverse engineering (Reverse Engineering을 이용한 $Al_{x}Ga_{1-x}As/In_{y}Ga_{1-y}$As P-HEMTs의 구조적 분석)

  • 김병헌;황광철;안형근;한득영
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.255-258
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    • 2001
  • In this paper, DC and small signal characteristics with different physical parameters are expected for p-HEMTs (Pseudomorphic High Electron Mobility Transistors) with different temperatures ranging from 300K to 623K which are widely used for a low noise and/or ultra high frequency device. A device of 0.2$\times$200 ${\mu}{\textrm}{m}$$^2$dimension having very low noise has been chosen to extract the experimental data. Theoretical prediction has been obtained using a simulaor(HELENA) which needs experimental input data extracted from reverse engineering process. From the results, relation between structural parameters and temperature dependency of electrical characteristics are qualitatively explained to use in the design of descrete and integrated circuits to guarantee the optimal operation of the system.

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Modeling and prediction of rapid pollution of insulators in substations based on weather information

  • Nanayakkara, Nishantha;Nakamura, Masatoshi;Goto, Satoru;Taniguchi, Takashi
    • 제어로봇시스템학회:학술대회논문집
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    • 1994.10a
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    • pp.202-206
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    • 1994
  • Mathematical model of the pollution rate of substation insulators is constructed, taking the model parameters as wind speed, wind direction, typhoon conditions and rainfall in an hourly basis. The main feature of model construction is to distinguish the effect of each parameter by separately analyzing the positive and negative pollution causing factors. Model parameters for the insulators of Karatsu substation, Saga, Japan were estimated and model validation was done using the actual data, in which the pollution deposits on the insulators were measured using pilot insulator and 'salt meter'. The proposed model of the pollution rate [mg/cm$^{2}$/hr] enables the identification of the effective parameters and prediction of the pollution rate so that it helps for the automatic decision making for insulator cleaning or the model can be used as a tool for the substation engineers to make precautionary measures.

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A New Method to Estimate the Induced Electric Field in the Human Child Exposed to a 100 kHz-10 MHz Magnetic Field Using Body Size Parameters

  • Park, Young-Min;Song, Hye-Jin;Byun, Jin-Kyu
    • Journal of Magnetics
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    • v.19 no.2
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    • pp.174-180
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    • 2014
  • In this paper, a new and simple method is proposed to quickly estimate the induced electric field in the human child exposed to a 100 kHz-10 MHz magnetic field, for the sake of electromagnetic field (EMF) safety assessment. The quasi-static finite-difference time-domain (FDTD) method is used to calculate the induced electric fields in high resolution 3D human child models with various body size parameters, in order to derive the correction factor for the estimation equation. The calculations are repeated for various frequencies and incident angles of the magnetic field. Based on these calculation results, a new and simple estimation equation for the 99th percentile value of the body electric field is derived that depends on the body size parameters, and the incident magnetic field. The estimation errors were equal to or less than 5.1%, for all cases considered.

A Study on Parameters for Design of IGBT (IGBT 설계 Parameter 연구)

  • Lho, Young-Hwan;Lee, Sang-Yong;Kim, Yoon-Ho
    • Proceedings of the KSR Conference
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    • 2009.05a
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    • pp.1943-1950
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    • 2009
  • The development of high voltage Insulated Gate Bipolar Transistor (IGBT) have given new device advantage in the areas where they compete with conventional GTO (Gate Turnoff Thyristor) technology. The IGBT combines the advantages of a power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) and a bipolar power transistor. The change of electrical characteristics for IGBT is mainly coming from the change of characteristics of MOSFET at the input gate and the PNP transistors at the output. The gate oxide structure gives the main influence on the changes in the electrical characteristics affected by environments such as radiation and temperature, etc.. The change of threshold voltage, which is one of the important design parameters, is brought by charge trapping at the gate oxide. In this paper, the electrical characteristics are simulated by SPICE simulation, and the parameters are found to design optimized circuits.

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On-line Parameter Estimator Based on Takagi-Sugeno Fuzzy Models

  • Park, Chang-Woo;Hyun, Chang-Ho;Park, Mignon
    • Journal of the Korean Institute of Intelligent Systems
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    • v.12 no.5
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    • pp.481-486
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    • 2002
  • In this paper, a new on-line parameter estimation methodology for the general continuous time Takagi-Sugeno(T-5) fuzzy model whose parameters are poorly known or uncertain is presented. An estimator with an appropriate adaptive law for updating the parameters is designed and analyzed based on the Lyapunov theory. The adaptive law is designed so that the estimation model follows the plant parameterized model. By the proposed estimator, the parameters of the T-S fuzzy model can be estimated by observing the behavior of the system and it can be a basis for the indirect adaptive fuzzy control. Based on the derived design method, the parameter estimation for controllable canonical T-S fuzzy model is also Presented.

Study on 3.3 kV Super Junction Field Stop IGBT According to Design and Process Parameters (설계 및 공정 파라미터에 따른 3.3 kV급 Super Junction FS-IGBT에 관한 연구)

  • Kang, Ey Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.4
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    • pp.210-213
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    • 2017
  • In this paper, we analyzed the structural design and electrical characteristics of a 3.3 kV super junction FS IGBT as a next generation power device. The device parameters were extracted by design and process simulation. To obtain optimal breakdown voltage, we researched the breakdown characteristics. Initially, we confirmed that the breakdown voltage decreased as trench depth increased. We analyzed the breakdown voltage according to p pillar dose. As a result of the experiment, we confirmed that the breakdown voltage increased as p pillar dose increased. To obtain more than 3.3 kV, the p pillar dose was $5{\times}10^{13}cm^{-2}$, and the epi layer resistance was $140{\Omega}$. We extracted design and process parameters considering the on state voltage drop.