• Proceedings of the KIEE Conference
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1367-1369
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• 1998

To achieve the ULSI goals of higher density, greater performance and operation speed have been scaled down. However, the reduction of channel length cause undesirable problems such as drop of punchthrough voltage, hot-carrier degradation and high leakage current, etc.. It is shown that the device characteristics depend on process parameters. In this Paper, we catched hold of trends of hot-carrier effects and punchthrough voltages due to variation of some process parameters such as LDD doses(P), spacer lengths, channel doses($BF_2$) and $V_T$ adjusting channel implantation energies using design trend curve (DTC). As the LDD and channel doses increased, hot-carrier phenomena became more severe, and punchthrough voltage was decreased. It were represented that punchthrough and hot carrier effects were critically depend on LDD and channel doses.

• The Journal of Korea Robotics Society
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• 제8권1호
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• pp.8-19
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• 2013

One of the important issues for structural and electrical specifications in developing a robot is to determine lengths of links and motor specifications, which need to be appropriate to the purpose of robot. These issues become more critical for a gait rehabilitation robot, since a patient wears the robot. Prior to developing an entire gait rehabilitation robot, designing of a 1DOF assistive knee joint of the robot is considered in this paper. Human gait motions were used to determine an allowable range of knee joint that was rotated with a linear type actuator (ball-screw type) and links. The lengths of each link were determined by using an optimization process, minimizing the stroke of actuator and the total energy (kinetic and potential energy). Kinetic analysis was performed in order to determine maximum rotational speed and maximum torque of the motor for tracking gait trajectory properly. The prototype of 1 DOF assistive knee joint was built and examined with a impedance controller.

• Journal of Magnetics
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• 제18권2호
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• pp.159-162
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• 2013

We present how to optimize the operation condition including frequency of the orthogonal fluxgate sensor in this paper. The orthogonal fluxgate sensor was fabricated with a Co-based amorphous wire with 10 mm long and 100 ${\mu}m$ in the diameter and a 270-turn pickup coil wound on the amorphous wire. In order to investigate the frequency dependence of the sensitivity, output spectra of the sensor which was connected by using a coaxial cable with various lengths of 0.5-5 m were measured with a RF lock-in amplifier. The maximum sensitivities were obtained at different frequencies according to coaxial cable lengths. It was found that the optimal operation frequencies, at which maximum sensitivities were appeared, were almost identical to the frequencies of impedance resonance. The maximum sensitivity and optimal operation frequency were 1.1 V/Oe (${\approx}$ 11000 V/T) and 1.25 MHz respectively.

• ETRI Journal
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• 제45권2호
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• pp.291-303
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• 2023

Selfies are a popular form of photography. However, due to physical constraints, the compositions of selfies are limited. We present algorithms for creating virtual portraits with interesting compositions from a set of selfies. The selfies are taken at the same location while the user spins around. The scene is analyzed using multiple selfies to determine the locations of the camera, subject, and background. Then, a view from a virtual camera is synthesized. We present two use cases. After rearranging the distances between the camera, subject, and background, we render a virtual view from a camera with a longer focal length. Following that, changes in perspective and lens characteristics caused by new compositions and focal lengths are simulated. Second, a virtual panoramic view with a larger field of view is rendered, with the user's image placed in a preferred location. In our experiments, virtual portraits with a wide range of focal lengths were obtained using a device equipped with a lens that has only one focal length. The rendered portraits included compositions that would be photographed with actual lenses. Our proposed algorithms can provide new use cases in which selfie compositions are not limited by a camera's focal length or distance from the camera.

• Journal of Electrical Engineering and Technology
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• 제11권6호
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• pp.1787-1792
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• 2016

Previous walking pattern generation methods could generate walking patterns that allow only straight walking on flat and uneven terrain. They were unable to generate modifiable walking patterns whereby the sagittal and lateral step lengths and walking direction can be changed at every footstep. This paper proposes a novel walking pattern generation method to realize modifiable walking of humanoid robots on unknown uneven terrain. The proposed method employs a walking pattern generator based on the 3-D linear inverted pendulum model (LIPM), which enables a humanoid robot to vary its walking patterns at every footstep. A control strategy for walking on unknown uneven terrain is proposed. Virtual spring-damper (VSD) models are used to compensate for the disturbances that occur between the robot and the terrain when the robot walks on uneven terrain with unknown height. In addition, methods for generating the foot and vertical center of mass (COM) of the 3-D LIPM trajectories are developed to realize stable walking on unknown uneven terrain. The proposed method is implemented on a small-sized humanoid robot platform, DARwIn-OP and its effectiveness is demonstrated experimentally.

• Journal of Electrical Engineering and information Science
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• 제2권5호
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• pp.108-113
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• 1997

In this paper, the optimum condition of (110) Si etching with the potassium hydroxide(KOH) etchant is presented. Although several researches on (110) Si anisotropic etching have been studied, there has been lack of effects of mask quality and etching conditions on the selectivity and the roughness o the etched surface. Three kinds of masks (film, emulsion and E-beam mask) were used in order to verify the effect of etching properties. Anisotropic bulk etching depends on the crystalline orientation and the concentration and temperature of the etchant. In order to investigate the effect of etching conditions on selectivity and the roughness of the etched surface, the concentration of the etchant was varied from 35 to 45 per cent in weight with increments by 5 per cent and the temperature was changed from 70 to 90$^{\circ}C$ with increments by 10$^{\circ}C$. The combination of the temperature of 70$^{\circ}C$ and the concentration of 40wt.% was found to be the optimum etching condition for high selectivity. Etched surfaces show minimum surfaces show minimum surface roughness at a temperature of 80$^{\circ}C$ and a concentation of 40wt.%. Comb structures with various comb widths were fabricated and the lengths of the combs wree measured with several etching time durations. A micro comb structure 525$\mu\textrm{m}$ high was fabricated for MEMS application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.87-88
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• 2006

Recently, poly-Si TFT-LCD starts to be mass produced using excimer laser annealing (ELA) poly-Si. The main reason for this is the good quality poly-Si and large area uniformity. We report the influence of channel length and width on poly-Si TFTs performance. Transfer characteristics of p-channel poly-Si thin film transistors fabricated on polycrystalline silicon (poly-Si) thin film transistors (TFTs) with various channel lengths and widths of 2-30 ${\mu}m$ has been investigated. In this paper, we analyzed the data of p-type TFTs. We studied threshold voltage ($V_{TH}$), on/off current ratio ($I_{ON}/I_{OFF}$), saturation current ($I_{DSAT}$), and transconductance ($g_m$) of p-channel poly-Si thin film transistors with various channel lengths and widths.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권1호
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• pp.51-55
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• 2007

This paper investigates the subthreshold behavior of Fin Field Effect Transistor (FinFET). The FinFET is considered to be an alternate MOSFET structure for the deep sub-micron regime, having excellent device characteristics. As the channel length decreases, the study of subthreshold behavior of the device becomes critically important for successful design and implementation of digital circuits. An accurate analysis of subthreshold behavior of FinFET was done by simulating the device in a 3D process and device simulator, Taurus. The subthreshold behavior of FinFET, was measured using a parameter called S-factor which was obtained from the $In(I_{DS})\;-\;V_{GS}$ characteristics. The value of S-factor of devices of various fin dimensions with channel length $L_g$ in the range of 20 nm - 50 nm and with the fin width $T_{fin}$ in the range of 10 nm - 40 nm was calculated. It was observed that for devices with longer channel lengths, the value of S-factor was close to the ideal value of 60 m V/dec. The S-factor increases exponentially for channel lengths, $L_g\;<\;1.5\;T_{fin}$. Further, for a constant $L_g$, the S factor was observed to increase with $T_{fin}$. An empirical relationship between S, $L_g$ and $T_{fin}$ was developed based on the simulation results, which could be used as a rule of thumb for determining the S-factor of devices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• 제45권8호
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• pp.17-23
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• 2008

We have investigated the properties of the novel rectangular ring lasers containing active and passive regions in a InP material system. The rectangular ring laser consists of four low loss total internal reflection mirrors and a directional coupler made out of passive three waveguide. Two different lasers haying active lengths of 250 and $350{\mu}m$ and total cavity lengths of 580 and $780{\mu}m$ are fabricated, respectively. For both devices lasing thresholds of 38 mA is obtained at room temperature and under continuous wave operation. Lasing is predominantly single mode with the side mode suppression ratio better than 20 dB.

• ETRI Journal
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• 제31권5호
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• pp.510-517
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• 2009

A high throughput parallel decoding method is developed for context-based adaptive variable length codes. In this paper, several new design ideas are devised and implemented for scalable parallel processing, a reduction in area, and a reduction in power requirements. First, simplified logical operations instead of memory lookups are used for parallel processing. Second, the codes are grouped based on their lengths for efficient logical operation. Third, up to M bits of the input stream can be analyzed simultaneously. For comparison, we designed a logical-operation-based parallel decoder for M=8 and a conventional parallel decoder. High-speed parallel decoding becomes possible with our method. In addition, for similar decoding rates (1.57 codes/cycle for M=8), our new approach uses 46% less chip area than the conventional method.