• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.600-600
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• 2013

We have fabricated Cr nanodot Schottky diodes utilizing AAO templates formed on n-Si substrates. Three different sizes of Cr nanodots (about 75.0, 57.6, and 35.8 nm) were obtained by controlling the height of the AAO template. Cr nanodot Schottky diodes showed a rectifying behavior with low SBHs of 0.17~0.20 eV and high ideality factors of 5.6~9.2 compared to those for the bulk diode. Also, Cr nanodot Schottky diodes with smaller diameters yield higher current densities than those with larger diameters. These electrical behaviors can be explained by both Schottky barrier height (SBH) lowering effects and enhanced tunneling current due to the nanoscale size of the Schottky contact. Also, we have fabricated Cr-Si nanorod Schottky diodes with three different lengths (130, 220, and 330 nm) by dry etching of n-Si substrate. Cr-Si nanorod Schottky diodes with longer nanorods yield higher reverse current than those with shorter nanorods due to the enhanced electric field, which is attributed to a high aspect ratio of Si nanorod.

• 한국연소학회:학술대회논문집
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• 2002.06a
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• pp.179-184
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• 2002

Interaction between flames and non-thermal plasmas of DBD type has been experimentally investigated. Vigorous streamers were observed under flame conditions because of the increase of reduced field (electrical) at high temperature as well as the seeding of free electrons and ions generated inside the flame. Flame lengths were significantly shortened as the applied voltage increased on account of intense mixing by ionic winds and soot-induced flows. Flame luminosities severely decreased under plasma conditions, which means the reduction of soot, since the residence time was reduced because of the flame shortening. Temperature and major species concentrations measured by FTIR were not changed despite the plasma generation. which shows overall chemistries were not affected by non-thermal plasmas.

• Journal of the Korea Computer Industry Society
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• v.6 no.5
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• pp.783-790
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• 2005

In this paper, we have simulated a Symmetric Dual-gate Single-Si TFT which has three split floating n+ zones. This structure reduces the kink-effect drastically and improves the on-current. Due to the separated floating n+ zones, the transistor channel region is split into four zones with different lengths defined by a floating n+ region, This structure allows an effective reduction of the kink-effect depending on the length of two sub-channels. The on-current of the proposed dual-gate structure is 0.9mA while that of the conventional dual-gate structure is 0.5mA at a 12V drain voltage and a 7V gate voltage. This result shows a 80% enhancement in on-current. Moreover we observed the reduction of electric field in the channel region compared to conventional single-gate TFT and the reduction of the output conductance in the saturation region. In addition, we also confirmed the reduction of hole concentration in the channel region so that the kink-effect reduces effectively.

• Proceedings of the KIEE Conference
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• 1987.07b
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• pp.1481-1484
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• 1987

The ALU of CMOS microcomputer have been designed with the 3um design rule for CMOS polysilicon gate and Its cells were layed out. The operation of circuits were simulated with EDAS_P. The widths and lengths of gates In the circuit were determined using SPlCE. The carry delay of the ALU was Improved by Manchester carry method. The results of logic and circuit simulation were in good agreement with expected circuit characteristics.

• Proceedings of the KIEE Conference
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• 1987.07b
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• pp.1499-1502
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• 1987

The control part of one-chip microcomputer has been designed with the 3um design rule for CMOS poly silicon gate and Its cells were layed out. The operation of the logic circuits were simulated with EDAS_P. The widths and lengths of circuit were determined by using PSPICE. The control part of microcomputer has designed by using hardwired methode. Results of logic simulation and circuit simulation are in good agreements with expected circuit characteristics.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.258-262
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• 1988

Investigations were made on the effects of wire-shaped conducting particles in compressed gas chamber on breakdown voltage. The objective was to recognize the relationship between the length of wire-shaped conducting particles and a.c breakdown voltage. Also the influence of conducting particles on corona inception voltage and extinction voltage were investigated. The values of breakdown voltage and corona inception, extinction voltages were calculated by wire shaped-conducting particles lengths.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.1
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• pp.46-50
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• 2013

A modified design that can reject the nth harmonic components in the Wilkinson power divider is presented. After adding transmission lines of electrical lengths determined by suppression terms between two transformers of the traditional design, a solution of the modified Wilkinson divider can be found. Experimental results show the second and third harmonic suppression to be -45.3 dB and -46.4 dB, respectively, while maintaining the conventional performance at the fundamental frequency.

• Journal of Information Display
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• v.12 no.4
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• pp.223-227
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• 2011

Electrophosphorescent devices with ionomer-type hole transport layers were investigated. On top of the 3,4-ethylenedioxy thiophene:poly(4-styrene sulfonate) [PEDOT:PSS] structures, fluoropolymer interfacial layers (FPIs) with different side chain lengths were introduced. Both for the PEDOT:PSS/FPI (layered) and PEDOT:PSS (mixed) structures with soluble phosphorescent emitters, the short-side-chain FPIs showed higher efficiency. The difference in the electrical properties of the two FPIs for bipolar (light-emitting) devices was not clear, but the hole-only device clearly showed the favored hole injection at the PEDOT:PSS/FPI structure with a shorter side chain, a copolymer of tetrafluoroethylene and sulfonyl fluoride vinyl ether.

• Proceedings of the KIEE Conference
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• 2001.05a
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• pp.34-37
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• 2001

This paper presents some results after comparing the characteristics of 3 algorithms, which are discrete Fourier transform based algorithm, least square method, and modified differential approximation algorithm, used at most distance relays all over the world. In case of the DFT based distance relaying algorithm, the length of the algorithm data window and the cut-off frequency of an anti-aliasing low-pass filter adopted are fixed. On the other hand, the data window lengths are changed according to the corresponding low-pass filters in the rest two algorithms. In series of tests, the apparent impedance estimated by the modified differential approximation algorithm shows faster and more stable characteristics of convergence than the two others.

• The Journal of the Acoustical Society of Korea
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• v.23 no.2E
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• pp.40-43
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• 2004

In moving jammer environments, the performance of conventional adaptive beamformer is severely degraded and the robust adaptive beamformer requires additional sensors to obtain desired performances. Therefore, it is necessary to develop efficient algorithm without any additional requirement of the number of sensors, etc. In this paper, we introduce a fast adaptive algorithm with variable forgetting factor, which does not have any additional requirements. From the computer simulations, we obtain the better performances than those of other techniques for the arrays with various aperture lengths.