• Title/Summary/Keyword: electrical length

Search Result 2,448, Processing Time 0.031 seconds

Measurement of Stride Length Using Optical Method (광학적 분석방법을 이용한 보폭측정)

  • Jung, Gu-In;Jun, Jae-Hoon;Lee, Kang-Hwi;Song, Min-Sun
    • The Transactions of The Korean Institute of Electrical Engineers
    • /
    • v.57 no.6
    • /
    • pp.1116-1122
    • /
    • 2008
  • Since conventional methods for measuring stride length(distance) are many weaknesses, optical methods have been developed to measure stride length(distance) of human pedestrians. IR(Infrared) elements and Power LED(Light Emitting Diode) with two types of lens were used to correlate detected light intensity with stride length(distance). The suggested methods in this study are simple, convenient, and cost effective. The results can be used to analyze walking patterns of normal and disabled men, and to monitor the recovering processes of the disabled patients.

Transmission Characteristics & Analysis of Ignition Voltage According to Its Conductor Length from the Ballast to the HID Lamp (HID램프와 안정기 사이의 전선 길이에 따른 이그니션 전압 전달특성 분석)

  • Bang, Sun-Bae;Kim, Chong-Min;Han, Woon-Ki;Im, Byeong-No;Jang, Mog-Soon
    • The Transactions of the Korean Institute of Electrical Engineers P
    • /
    • v.56 no.3
    • /
    • pp.148-154
    • /
    • 2007
  • In this paper, characteristics of ignition voltage and current by wire length of HID(High Intensity Discharge) lamp circuit are analyzed. In the construction field, decision of the wire thickness for HID lamp circuit has the problems, and these are presented. Through transmit parameters, equivalent model of the ballast and HID lamp circuit was derived. The graph of voltage reduction about length between the ballast and the lamp is shown. The simulation of proposed model and experimental results are presented in order to validate the proposed method. The proposed model and graph can use to choose the proper length of wire between the ballast and the lamp in the field.

Study on the Resistance characteristics with the Bridge length of the Uncooled infrared sensor with high absorptance (고흡수율 비냉각형 적외선 센서의 브릿지 길이에 따른 저항특성 연구)

  • Kang, Hyeong-Gon;Lee, Hae-Seong;Lim, Yong-Geun;Park, Seung-Bum;Lee, Hong-Ki
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2004.11a
    • /
    • pp.464-467
    • /
    • 2004
  • An uncooled infrared sensor has been prepared with sputtering, plasma ash, ICP, and PECVD on a Si wafer In order to analyze the resistance characteristics with the bridge length in the infrared sensor, three samples were prepared with lengths of 0 (no bridge), 15 (short bridge), and 29 urn (long bridge), respectively. I-V curves were measured for their resistance characteristics and EPMA for the dopping concentration of the amorphous Si. The phosphorus concentration was about 4 % and the resistance was increased with the bridge length. The bridge length of cantilever is very important factor for improvement of the efficiency in an infrared sensor.

  • PDF

Odd-Even Effects of the Anchoring Strength for Nematic Liquid Crystal on Rubbed Polyimide LB Surfaces (러빙처리된 폴리이미드막 LB막에 있어서 네마틱액정의 결합강도의 홀수짝수 효과)

  • Seo, Dae-Shik
    • Proceedings of the KIEE Conference
    • /
    • 1996.07c
    • /
    • pp.1453-1455
    • /
    • 1996
  • The odd-even effect of the alkyl chain length of rubbed polyimide Langmuir-Blodgett (LB) surfaces on the extrapolation length of 5CB has been successfully evaluated for the first time by measuring polar anchoring strength. The extrapolation length of 5CB for rubbed PI-LB surfaces with even-numbers is small compared with odd-numbers for alkyl chain lengths of greater than 7 carbons. The extrapolation length of 5CB on rubbed PI-LB surfaces with odd-numbers increases gradually as the temperature increases but tends to diverge near the clearing temperature (Tc=$35.3^{\circ}C$). The extrapolation length diverges because of rapidly decreasing surface order near $T_c$. We suggest that the polar anchoring strength on rubbed PI-LB surfaces with even-number is strong because of relatively high surface ordering caused by more crystalline surfaces. Finally, we conclude that the odd-even effects of the polar anchoring strength in NLCs are strongly related to the character of the polymer and observed clearly for long alkyl chain lengths.

  • PDF

The EMTP Analysis and Characteristics of Load Impedance on Various Electrode length, Pulse Repetition in Pulse Corona Discharging (펄스코로나 방전의 전극길이, 펄스반복율에 따른 부하 임피던스 변화 특성 및 EMTP 해석)

  • Jeong, Jong-Han;Song, U-Jeong;Jeon, Jin-An;Jeong, Hyeon-Ju;Hong, Jeong-Hwan;Kim, Hui-Je
    • The Transactions of the Korean Institute of Electrical Engineers C
    • /
    • v.51 no.4
    • /
    • pp.158-163
    • /
    • 2002
  • The pulsed Power system has been widely used to many applications, such as E/P(Electrostatic Precipitator), DeNOx/DeSOx power system, often generator, etc. In this paper, we study EMTP analysis and characteristics of critical voltage and load in impedance on various electrode length of pulse corona. To obtain a stable pulse voltage, we designed a compact pulse generator switched MOSFET and tested their characteristics by adjusting electrode length and pulse repetition. As a re sult, critical voltage of pulse corona and load impedance on increasing electrode length were decreased. These results indicate we can control critical voltage of pulse corona and suppress arc discharging between two electrodes.

Gate Length Optimization for Minimum Forward Voltage Drop of IGBTs

  • Moon Jin-Woo;Park Dong-Wook;Choi Yearn-Ik;Chung Sang-Koo
    • KIEE International Transactions on Electrophysics and Applications
    • /
    • v.5C no.6
    • /
    • pp.246-250
    • /
    • 2005
  • The forward voltage drop of IGBT is studied numerically and analytically as a function of gate length. An analytical expression is presented for the first time for the surface potential variation along the channel layer under the gate of IGBT. The surface potential drop and the carrier density near the surface allow calculation of the forward voltage drop of IGBT analytically as a function of the gate length. The voltage-drop in the drift region near the gate decreases exponentially, whereas that on the surface increases linearly with increasing the gate length, the sum of which exhibits an optimum gate length, resulting in a minimum forward voltage drop. Based on the surface potential drop, a remodelling of the forward voltage drop of IGBT is also proposed.

The Effect According to Chain Length of Light Response Displacement Current (광반응 변위전류의 체인길이에 따른 영향)

  • 김성진;강용철;정헌상;구할본;최영일;백순기;이경섭
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2000.07a
    • /
    • pp.495-498
    • /
    • 2000
  • In this paper, generation form of displacement current was compared and measured with air-water interfacing induce monolayers which 8A5H with azobenzene and arac.acid mixed. Light response of two monolayers which chain length are different was compared and measured though they are the same isomer. The experimental results are as following; In the displacement current form of mixed monolayers and 8A5H, mixed monolayers which chain length is longer than that of 8A5H caused the displacement current about 40[fA] mole. This is the reason chain length of hydrophobicity in mixed monolayers is longer than that of 8A5H In the case of light stimulus mixed monolayers reacted less than 8A5H about 9[fA]. This is the reason molecule dynamic behaviour in cia and trans was net activated due to its very long chain length.

  • PDF

Rigorous Design of 22-nm Node 4-Terminal SOI FinFETs for Reliable Low Standby Power Operation with Semi-empirical Parameters

  • Cho, Seong-Jae;O'uchi, Shinichi;Endo, Kazuhiko;Kim, Sang-Wan;Son, Young-Hwan;Kang, In-Man;Masahara, Meishoku;Harris, James S.Jr;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.10 no.4
    • /
    • pp.265-275
    • /
    • 2010
  • In this work, reliable methodology for device design is presented. Based on this method, the underlap length has been optimized for minimizing the gateinduced drain leakage (GIDL) in a 22-nm node 4-terminal (4-T) silicon-on-insulator (SOI) fin-shaped field effect transistor (FinFET) by TCAD simulation. In order to examine the effects of underlap length on GIDL more realistically, doping profile of the source and drain (S/D) junctions, carrier lifetimes, and the parameters for a band-to-band tunneling (BTBT) model have been experimentally extracted from the devices of 90-nm channel length as well as pnjunction test element groups (TEGs). It was confirmed that the underlap length should be near 15 nm to suppress GIDL effectively for reliable low standby power (LSTP) operation.

Comparison to Dielectric Properties of LB Films for Length of Methylene Group (메틸렌기의 길이에 따른 LB막의 유전 특성 비교)

  • Kang, Ki-Ho;Kim, Do-Kyun;Choi, Yong-Sung;Chang, Jeong-Soo;Kwon, Young-Soo
    • Proceedings of the KIEE Conference
    • /
    • 1999.07d
    • /
    • pp.1843-1845
    • /
    • 1999
  • We have investigated the dielectric characteristics of palmitic acid(PA), stearic acid (SA) and arachidic acid(AA) Langmuir-Blodgett(LB) films because these fatty acid systems have a same hydrophilic group and a different hydrophobic one (alkyl chain length). In this work. fatty acid systems were used as LB films and the status of the deposited films was confirmed by evaluating the transfer ratio. the UV absorption and the capacitance. Also, the dielectric characteristics such as the frequency-capacitance characteristics and the dielectric dispersion and absorption characteristics of PA, SA and AA through-plane were measured. The relative dielectric constants of PA, SA and AA LB films were about $2.6\sim4.6$, $2.4\sim4.1$ and $2.2\sim3.8$, respectively. That is, the relative dielectric constants were decreased in proportion to the chain length of methylene group. And, the dielectric dispersion and absorption of each fatty acid LB films have arisen from spontaneous polarization of dipole polarization in the range of $10^4\sim10^5[Hz]$.

  • PDF

Adaptive threshold for discrete fourier transform-based channel estimation in generalized frequency division multiplexing system

  • Vincent Vincent;Effrina Yanti Hamid;Al Kautsar Permana
    • ETRI Journal
    • /
    • v.46 no.3
    • /
    • pp.392-403
    • /
    • 2024
  • Even though generalized frequency division multiplexing is an alternative waveform method expected to replace the orthogonal frequency division multiplexing in the future, its implementation must alleviate channel effects. Least-squares (LS), a low-complexity channel estimation technique, could be improved by using the discrete Fourier transform (DFT) without increasing complexity. Unlike the usage of the LS method, the DFT-based method requires the receiver to know the channel impulse response (CIR) length, which is unknown. This study introduces a simple, yet effective, CIR length estimator by utilizing LS estimation. As the cyclic prefix (CP) length is commonly set to be longer than the CIR length, it is possible to search through the first samples if CP is larger than a threshold set using the remaining samples. An adaptive scale is also designed to lower the error probability of the estimation, and a simple signal-to-interference-noise ratio estimation is also proposed by utilizing a sparse preamble to support the use of the scale. A software simulation is used to show the ability of the proposed system to estimate the CIR length. Due to shorter CIR length of rural area, the performance is slightly poorer compared to urban environment. Nevertheless, satisfactory performance is shown for both environments.