• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.4
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• pp.326-331
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• 2000

We have fabricated the field emitter arrays coated with diamond-like carbon (DLC) films that improved the field emission characteristics. The nitrogen doped DLC films are prepared by the filtered cathodic vacuum are (FCVA) tehnique. The activation energy of the nitrogen doped DLC films are derived from electrical conductivity measurements. The silicon field emission arrays (FEAs) were prepared by the VLSI technique. The turn-on field was rapidly decreasing and the emission current was remarkably increasing the DLC-coated FEAs than the non-coated silicon FEAs. In the nitrogen doped FEAs, the turn-on field decreased and the emission current increased with increasing the nitrogen found out the field emission current and the work function of the DLC-coated FEAs was remarkably decreased than that of the non-coated silicon FEAs. As nitrogen doping concentrations are increased the work function of FEAs is decreased and the field emission properties are improved in nitrogen doped DLC-coated FEAs. This phenomenon in due the fact that the Fermi energy level moves to the conduction band by increasing nitrogen doping concentration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.436-442
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• 2009

This paper describes a study on the design of compact polymer bushing with inner control shield. In the bushing, a high electric stress occurred between field shaper and central conductor by the closely space. Also coaxial cylindrical shield has a great height along the axis to control an electric field. Consequently, all the potentials are raised axially along the field shaper and electric stress is concentrated on a part of the surface of the FRP tube near the upper end of the field shaper. In accordance, the field control can be achieved by means of the designs of such inner control shields. The floating and ring shield designs was decreased electric field concentration at critical parts of the bushing. The shield gaps is formed between field shaper and ring shield. Accordance equipotential lines extend through gaps. As a result, the resulting electrical stress are thus reduced in the range $17{\sim}23%$ in the bushing with floating and ring shield designs. Maxwell 2D simulator based on the boundary element method was also introduced in order to verify the reliability of the polymer bushing. The optimized design uses internal elements for electric stress grading at critical parts of the bushing.

• Transactions on Electrical and Electronic Materials
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• v.1 no.3
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• pp.29-33
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• 2000

The crystallographic and high frequency characteristics of $Fe_{73.9}Cu_{1.0}Nb_{3.5}Si_{14.0}B_{7.6}$ soft magnetic alloys were investigated under magnetic field annealing, The crystallization fraction of annealed samples with longitudinal magnetic fields is higher than that of samples without magnetic field. When the transverse magnetic field is applied, the crystallization fraction does not increases but decreases until $500^{circ}C$. It is found that for samples, the saturation induction are all same with 1.3 T. The coercive field of as-cast samples is 1.03 A/cm, but in annealed samples it decrease from 0.56 to 0.1A/cm with increasing annealing temperature from 400 to $550^{circ}C$. The squareness of annealed samples under transverse magnetic field has a small value than that of both without field and with longitudinal field annealing. It is noted that the magnetic field annealing with transverse direction to amorphous $Fe_{73.9}Cu_{1.0}Nb_{3.5}Si_{14.0}B_{7.6}$ profoundly influenced on the Mossbauer spectra in contrast to that with longitudinal direction and without magnetic field.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.215-220
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• 2016

Monolithically integrated devices are strongly desired in next generation power ICs to reduce the chip size and improve the efficiency and frequency response. Three examples of the embedment of different functional diode(s) into AlGaN/GaN heterojunction field-effect transistors are presented, which can minimize the parasitic effects caused by interconnection between devices.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2007.05a
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• pp.214-217
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• 2007

This paper presents a reduction method of penetrated electromagnetic fields through a narrow slot with resistive sheet in a planar conducting screen of infinite extent. When a plane wave is excited to the narrow slot, the aperture electric field is controlled by the parallel plates connected on the slot. The magnitude of penetrated electromagnetic fields through the narrow slot is controlled by the electric field distribution on the slot. The results show that the magnitude of the penetrated electromagnetic field can be effectively reduced by installing the resistive plates on the slot.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.7
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• pp.43-48
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• 2008

The characteristics of heat transfer of the bimetal disc for over-current protection device is specified. Bimetal consists of two metals which have a different thermal expansion coefficient. To analyze the thermal characteristics, temperature distribution when bimetal acts as a switch is calculated. As usual, heat source is applied to the bimetal and electric current is heat source in the over-current protection switch. In this paper, thermal distribution are obtained by solving a coupled electro-thermal field with 3D finite element method.

• Transactions on Electrical and Electronic Materials
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• v.4 no.4
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• pp.13-17
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• 2003

This paper deals with the edge effect in thin insulating films, focusing on their dependence on film thickness. The finding is that the electric field is lowered at the edge as the film thickness is reduced, which, in turn, is closely related to dielectric breakdown voltage. In order to analyze this phenomenon, a simple capacitor model is introduced with which dependence of dielectric breakdown voltage around the electrode edge on the film thickness is explained. Due to analytical difficulty to get the expression of electrical field strength at the edge, an equivalent circuit approach is used to find the voltage expression first and then the electric field expression using it. The relation gets to an agreement with the experimental findings shown in the paper. This outcome may be extended to solve similar problems in multi-layer insulating films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.74-75
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• 2008

TIGBT has some merits which are lower on-state voltage drop and smaller cell pitch, but also has a defect which is relatively lower breakdown voltage in comparison with planar IGBT. This lower breakdown voltage is due to the electric field which is concentrated on beneath the vertical gate. Therefore in this paper, new trench IGBT structure is proposed to improve breakdown voltage In the new proposed structure, a narrow oxide beneath the trench gate edge where the electric field is concentrated is extended into rectangular shape to decrease the electric field. As a result, breakdown voltage is improved to 23%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.495-496
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• 1998

The measurement of the amplitude and phase of electric fields on high voltage transmission lines is important for several reasons including a) Metering and determination of power flow, b) protective relaying. and c) fault sensing. The work reported here is directed toward a major improvement to optically based, electric-field sensors. This is a signal processing based technique for overcoming the instabilities of conventional, optically-based, electric-field sensors to changes in optical power or temperature.

• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2451-2453
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• 1998

With the recent trend to get more into the information age we suppose that the need of information for medical industry policy establishment and new product development of medical instrument will increase rapidly. The object of this research & development is the construction of a database system with information resources in the field of medical instrument for an efficient application of domestic and abroad information in the field of medical instrument and building the foundation for the construction of an unified information management system. In this research we finished the analysis of the collected material of informations for medical instrument industry, design of the database system with object-oriented modelling is done. and we developed pre-product level information management system running on WINDOWS.