• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1013-1015
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• 1995

The electrical properties of Al/TiN/Ti contact according to post anneal ins conditions are investigated at submicron contacts. $N^+$ contact resistance increases with increasing alloy temperature while $P^+$ contact resistance slightly decreases. The contact tentage current increases wi th increasing alloy temperature for both $N^+$ and $P^+$ contacts. The contact resistance and leakage current of $N^+$ contact increases with increasing alloy tide. $P^+$ contact resistance decreases with increasing alloy time but $P^+$ contact tentage current increases. The contact resistance and contact leakage current increases with increasing alloy cycles for both $N^+$ and $P^+$ contacts.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.05a
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• pp.43-45
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• 1988

Four W/Cu system(60wt%W-40wt%Cu, -0.lwt%Ni, -0.5wt%Ni, -0.lwt%C) and four WC/Cu system(60wt%WC-40wt%Cu, -0.lwt%Ni, -0.5wt%Ni, 0.lwt%C) electrical contacts were prepared by a press-sinter-infiltration process to compare with their properties. Hardness and electrical conductivity are proportional to the refractory metal(W or WC) properties and showed the effect of additives. Arc erosion trend of switch test is changed by current level. High currant test at 1kA showed a different crack formation pattern and erosion mode between W/Cu system and WC/Cu system contacts.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.593-596
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• 2001

It is necessary for calculation of repulsion forces acting on the closed electric contacts flowing over-current, e.g. inrush current and overload currents, to do optimum design of switching devices. In this paper, the farces and flux densities generated by currents at the contact point when circuit breakers are in closed state are obtained by using 3D finite element methode. To be convinced of the results, we measure electrogmanetic repulsion forces on contacts by measuring voltage between opened contacts in MCCB.

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.261-264
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• 1990

The specific contact resistance(SCR) of metal-semiconductor interface is an important design parameter for VLSI interconnecting technology. As the critical feature size of the integrated structures decrease, the physical size of ohmic contacts will also decrease and the series contact resistance will increase. Al-Si contacts on the annealing condition are studied. The propreties of the contacts depend considerably on the annealing procedures. Barrier height is measured from Capacitance-Voltage characteristics. The specific contact resistance are analyzed using a modified four point method.

• Proceedings of the KIEE Conference
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• 2003.04a
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• pp.82-84
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• 2003

In case contact between point of contacts is not achieved well, contact resistance is grown, and by current concentration at current conducting contacts can weld. In order to decrease contact resistance between contacts in case of busbar, installing spring between fixed contact and moving contact. and then force on faying surface of contacts increase and contact resistance decrease. But, in case increase force of spring to widen contact area, operating force moving contact can grow, on the contrary force of spring is small, contact resistance becomes low. Therefore, need to optimize force and number of spring. position, and also need to examine force change on contact surface at point of contact moving. In this paper, dynamic kinetics analysis for force on faying surface of contacts is performed at unsteady state. It is showed to not uniform force on surface between contacts, and we can got more uniform force by means of change spring position.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.4
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• pp.601-605
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• 2012

The non-controlled closing of High-voltage SF6 gas circuit breaker can cause transient current and overvoltage in the field. The controlled closing technology is an effective way to reduce transient current and voltage, prevent equipment failures, and improve power quality. For the development of controlled closing, it is obviously necessary to determine the withstand voltage between arc contacts of High-voltage SF6 gas circuit breaker in making operation. This paper focuses on decrease of pressure and density of SF6 gas that can affect withstand voltage between arc contacts in making operation. The dielectric strength between arc contacts could be improved by minimizing the decrement of pressure and density of SF6 gas obtained by simulation and test and moreover the rate of decrease of dielectric strength (RDDS) of arc contacts could be foreseen.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2000.06a
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• pp.187-193
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• 2000

Friction characteristics and electrical resistance of sliding contacts in slipring-brush assembly were investigated. Four brush materials containing relative amounts of copper and graphite were studied. The result showed that a copper-graphite brush at a particular graphite content exhibited the most stable frictional and electrical behaviour suggesting an optimum amount of solid lubricant in metal-graphite brush system. Microscopic observation and the surface analysis showed good agreement with this phenomena.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.3
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• pp.120-125
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• 2002

The aim of the present work is to optimized the annealing parameter in both front and back screen printed contacts realization on p-type multicrystalline silicon and with phosphorus diffused. The RTA treatments were carried out at various temperatures from 600 to 850$\^{C}$ and annealing time ranging from 3 min to 5 min in air, O$_2$and N$_2$ ambiance. The contacts parameters are obtained according to Transmission Line Model measurements. A good RTA cycle is obtained with a temperature plateau of 700$\^{C}$-750$\^{C}$ and annealing ambiance of air. Several processing parameters required for good cell efficiency are discussed with an emphasis placed on the critical role of the glass frit in the aluminum paste. A anamolus behaviour of Aluminum n-doping on p-type Si wafer, contact at high temperature have also been studied.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.54 no.1
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• pp.27-32
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• 2005

This study presents an analysis technique that can consider all variables which are needed in the design of short circuit current capability of electrical contacts. Required variables in the design are material of contact, contacting area, applied force, asperity of surface, current and so on. Short circuit current capability test was carried out for the interrelation of design variables and the verification of analysis technique. Temperature rise equation of the contacts was obtained from the test results, and also, a standard that is criterion of the occurrence availability of melting or spot of contact surface from test results was established.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.384-385
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• 2006

We studied about conductive pastes of the source-drain contacts for OTFTs(organic thin-film transistors) fabricated by direct printing(screen printing) method. We used Ag and conductive carbon black powder as the conductive fillers of pastes. The conductive pastes were manufactured by various dispersing agents and dispersing conditions and source-drain contacts with $100{\mu}m$ of channel length were fabricated. We could obtain the OTFTs which exhibited different field-effect behaviors over a range of source-dram and gate voltages depending on a kind of conductive fillers used conductive pastes.