• Electrical & Electronic Materials
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• v.10 no.7
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• pp.682-691
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• 1997

We have investigated the guided optical properties of a Ti:LiNbO$_3$optical waveguide which was fabricated by Ti-diffusion in an air atmosphere and proposed an effective polishing method of waveguide endfaces. And the results of guided optical mode and fabrication condition were obtained as follows; \circled1 propagation loss : 0.53 dB/cm \circled2 mode size : horizontal/vertical=12.5${\mu}{\textrm}{m}$ \circled3 mode mismatch : 1.7 dB \circled4 diffusion temperature : 105$0^{\circ}C$, time : 8 hours \circled5 atmosphere : air

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.235-235
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• 2003

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.9
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• pp.1596-1601
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• 2007

Aluminum doped zinc oxide (AZO) thin films were deposited on coming glass substrates using an Nd:YAG pulsed laser deposition technology. The AZO thin films were deposited with various growth conditions such as the substrate temperature and oxygen partial pressure. In this work, we used various measurement technologies in order to investigate the electrical, structural, and optical properties of the AZO thin films. Among the AZO thin films, the one prepared at the substrate temperature of $300^{\circ}C$ and oxygen partial pressure of 5 mTorr showed the best properties of an electrical resistivity of $4.63{\times}10^{-4}{\Omega}{\cdot}cm$, a carrier concentration of $9.25{\times}10^{20}cm^{-3}$, and a carrier mobility of $31.33cm^2/V{\cdot}s$. All the AZO thin films showed an high average optical transmittance over 90 % in visible region.

• Journal of the Korean Ceramic Society
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• v.40 no.11
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• pp.1113-1119
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• 2003

We used isopropanol which has low boiling point to prepare thin films at low temperature and changed mole concentration of zinc acetate from 0.3 to 1.3 mol/l. The structural, optical and electrical properties of ZnO thin films with Zn content were investigated. ZnO thin films highly oriented along the c-axis were obtained at Zn concentration of 0.7 mol/l. ZnO thin films with Zn concentration of 0.7 mol/l showed a homogeneous surface layer of nano structure. The transmittance of ZnO thin films by UV-vis. measurement was about 87% under the Zn concentration of 0.7 mol/l, but rapidly decreased over the 1.0 mol/l. The optical band gap energy was obtained from 3.07 to 3.22 eV which is very close to the band gap of bulk ZnO (3.2 eV). The electrical resistivity of ZnO thin films was about 150 $\Omega$-cm that shows little difference with Zn concentration. I-V curves of ZnO thin films exhibited typical ohmic contact properties.

• Journal of the Korean institute of surface engineering
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• v.43 no.3
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• pp.148-153
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• 2010

Transparent conducting films having a hybrid structure of GZO/Metal/GZO were prepared on glass substrates by sequential deposition using DC magnetron sputtering. Silver, copper, aluminum and zinc thin films were used as the intermediate metal layers in the hybrid structure. The electrical and optical properties of hybrid transparent conducting films were investigated with varying the thickness of metal layer or GZO layers. With increasing the metal thickness, hybrid films showed a noticeable improvement of the electrical conductivity, which is mainly dependent on the electrical property of the metal layer. GZO(40 nm)/Ag(10 nm)/GZO(40 nm) film exhibits a resistivity of $5.2{\times}10^{-5}{\Omega}{\cdot}cm$ with an optical transmittance of 82.8%. For the films with Zn interlayer, only marginal reduction in the resistivity was observed. Furthermore, unlike other metals, hybrid films with Zn interlayer showed a decrease in the resistivity with increasing the GZO thickness. The optimal thickness of GZO layer for anti-reflection effect at a given thickness of metal (10 nm) was found to be critically dependent on the refractive index of the metal. In addition, x-ray diffraction analysis showed that the insertion of Ag layer resulted in the improvement of crystallinity of GZO films, which is beneficial for the electrical and optical properties of hybrid-type transparent conducting films.

• Transactions on Electrical and Electronic Materials
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• v.18 no.4
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• pp.217-220
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• 2017

We deposited transparent conductive ZTO/Ag/ZTO trilayer thin films on glass substrates through magnetron sputtering, and then conducted intense electron beam irradiation on their surfaces to investigate the effects of electron irradiation on the structural, optical, and electrical properties of these films. After deposition, we electron irradiated the ZTO/Ag/ZTO films for 10 min at electron energies of 300, 500, and 700 eV. The films that were electron irradiated at 700 eV showed a higher optical transmittance (84.2%) in the visible wavelength region and a lower resistivity ($7.2{\times}10^{-5}{\Omega}cm$) compared with the other films. The figure of merit revealed that the ZTO/Ag/ZTO films that were electron irradiated at 700 eV had a higher optical and electrical performance than the other films prepared in this study.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.1
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• pp.23-27
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• 2005

We observed that optical properties of silicon changed under high dose electron irradiation at 250 keV. Our experimental results revealed that the optical transmission through a silicon wafer is significantly increased by electron irradiation. Transmission increase by the change in the absorption coefficient is explained through an analogy with amorphous silicon. Moreover, solar cell open-circuit voltages indicated that defects were generated by electron irradiation, and that the defects responded to annealing. Our results demonstrated that the optical properties of silicon can be controlled by a combination of electron irradiation and hydrogen annealing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.1008-1015
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• 2001

Thin films of vanadium oxide(VO$\_$x/) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio is changed from 0% to 8%. Crystal structure, chemical composition, bonding, optical and electrical properties of films sputter-deposited under different oxygen gas pressures are characterized through XPS, AES, RBS, FTIR, optical absorption and electrical conductivity measurements. V$_2$O$\_$5/ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric V$_2$O$\_$5/. The increase of O/V ratio with increasing oxygen gas pressure is attributed to the partial filling of oxygen vacancies through diffusion. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. With increasing oxygen gas pressure indirect and direct optical band gaps are increased, but thermal activation energies are decreased.

• Current Optics and Photonics
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• v.1 no.4
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• pp.284-288
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• 2017

In order to investigate the ultraviolet-excited photoluminescence properties of phosphor coatings and their relationship to thickness, Lumogen coatings with different thicknesses were deposited on quartz substrates and charge-coupled device chips by thermal evaporation. The variation of the film thickness affected the crystallite size, surface roughness and fluorescence signal. It was found that the Lumogen coating with the thickness of 420 nm has the largest luminescent signal and conversion efficiency, and the corresponding coated charge-coupled devices had the maximum quantum efficiency in the ultraviolet. These results provided one key parameter for improving the sensitivity of Lumogen coated charge-coupled devices to ultraviolet light.

• Transactions on Electrical and Electronic Materials
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• v.3 no.2
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• pp.6-9
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• 2002

Indium tin oxide (ITO) films were deposited on unheated PET substrates by DC reactive magnetron sputtering of In-Sn (90-10 wt%) metallic alloy target. Electrical and optical properties of as-deposited films were systematically studied by control of the deposition parameters such as working pressure, DC power, and oxygen partial pressure. The figures of merit are important factors that summarize briefly the relationship between electrical and optical properties of transparent conducting films. The formulae of T/R$\_$sh/ and T$\^$10// R$\_$sh/ are expressed as a function of transmittance and sheet resistance. The best values of those figures of merit were approximately 38.6 and 8.95 ($\times$10$\^$-3/Ω$\^$-1/), respectively.