• Korean Chemical Engineering Research
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• v.44 no.2
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• pp.166-171
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• 2006

In this study, in using a piezoelectric material of $Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3$ (PMN-PT), which has a high electromechanical coupling coefficient, we have tried to study about this material can be practically available as a new biosensor to detect protein by using surface acoustic wave (SAW). As the results, the filtering of the center frequency of the PMN-PT substrate is a superior result to that of the $LiTaO_3$ (LT) substrate, but the result was not completely satisfactory. Also this study attempts to develop a sensing method to detect mismatched DNA in order to diagnose cancer. We could directly immobilize the MutS to the NTA using the EDC solution. But, we immobilized MutS using nickel and it is judged that is more effective method to detect mismatched DNA.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.4
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• pp.7-11
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• 2006

In this paper, it is reported that film-bulk-acoustic resonator with high c-axis oriented AIN film on $Mo/SiO_2/Si(100)$ using metal-organic-chemical-vapor deposition was fabricated. The resonant frequency and anti-resonant frequency of the fabricated resonator were observed with 3.189[GHz] and 3.224[GHz], respectively. The quality factor and the effective electromechanical coupling coefficient(${k_{eff}}^2$) were measured with 24.7 and 2.65[%], respectively. The conditions of AIN deposition were substrate temperature of $950[^{\circ}C]$, pressure of 20Torr, and V-III ratio of 25000. A high c-axis oriented AIN film with $4{\times}10^{-5}[\Omega{cm}]$ resistivity of Mo bottom electrode and $4[^{\circ}]$ of AIN(0002) full-width at half-maximum(FWHM) on $Mo/SiO_2/Si(100)$ was grown successfully. The FWHM value of deposited AIN film is useful for the RF band pass filter specification for GHz-band wireless local area network.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.445-449
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• 2005

Aging phenomena of 0.2PMN-0.8PZT multilayered ceramic actuators(MCA) have been investigated at the room temperature. The piezoelectric materials were synthesized as conventional ceramic process, and MCA were fabricatedby tape casting methods. The crystalline structures and lattice parameters were investigated by X-ray diffraction analysis, showing the structure was tetragonal and c/a was about 1.01. And, the effective electromechanical coupling coefficient keff and pseudo-piezoelectric constant $d_{33}$were measured. Variable unipolar electric fields, $2{\sim}4kV/mm$, were applied to MCh to investigate the aging characteristics. After 2 kV/mm unipolar electric field, keff and $d_{33}$ were 0.454 and 4.44 respectively. The measured and simulated values using for aging phenomena analysis, had a good fit to the linear logarithmic stretched exponential law.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.980-986
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• 2001

Bragg reflector type FBAR was fabricated on the Si(100) substrate. We measured a frequency response of the resonator at 5.2 GHz and analyzed it by numerical calculation considering actual acoustic losses of each layer in the structure. We fabricated nine layer Bragg reflector of W-SiO$_2$pairs using r.f. sputtering method and fabricated AlN piezoelectric and Al electrodes using pulsed dc sputtering. The return loss(S$_{11}$) of the fabricated Bragg reflector type FBAR was 12 dB at 5.38 GHz and the series resonance frequency(f$_{s}$) was 5.376 GHz and the parallel resonance frequency(f$_{p}$) was 5.3865 GHz. Effective electro-mechanical coupling constant (K$_{eff{^2}}$) and Quality factors(Q$_{s}$), the Figures of Merit of the resonator, were about 0.48% and 411, respectively. We extracted acoustic parameters of AlN piezoelectric and reflection coefficient of the Bragg reflector by numerical calculation. We could know that material acoustic impedance and wave velocity of AlN piezoelectric decreased for intrinsic value and the electromechanical coupling constant(K$_2$) value was very low owing to the poor quality of the AlN piezoelectric. Reflection coefficient of Bragg reflector was 0.99966 and reflection band was very wide from 2.5 to 9.5 GHz.