• Title/Summary/Keyword: effective capacitance

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The surface kinetic properties between $BCl_3/Cl_2$/Ar plasma and $Al_2O_3$ thin film

  • Yang, Xue;Kim, Dong-Pyo;Um, Doo-Seung;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.169-169
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    • 2008
  • To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

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Comparison Study of Water Tension and Content Characteristics in Differently Textured Soils under Automatic Drip Irrigation (자동점적관수에 의한 토성별 수분함량 및 장력 변화특성 비교 연구)

  • Kim, Hak-Jin;Ahn, Sung-Wuk;Han, Kyung-Hwa;Choi, Jin-Yong;Chung, Sun-Ok;Roh, Mi-Young;Hur, Seung-Oh
    • Journal of Bio-Environment Control
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    • v.22 no.4
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    • pp.341-348
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    • 2013
  • Maintenance of adequate soil tension or content during the period of crop growth is necessary to support optimum plant growth and yields. A better understanding of soil tension and content for precision irrigation would allow optimal soil water condition to crops and minimize the adverse effects of water stress on crop growth and development. This research reports on a comparison of soil water tension and content variations in differently textured soils over time under drip irrigation using two different water management methods, i.e. pulse time and required water irrigation methods. The pulse time-based irrigation was performed by turning the solenoid valve on and off for preset times to allow the wetting front to disperse in root zone before additional water was applied. The required water estimation method was a new water control logic designed by Rural Development Administration that applies the amount of water required based on a conversion of the measured water tension into water content. The use of the pulse time irrigation method under drip irrigation at a high tension of -20 kPa and high temperatures over $30^{\circ}C$ was not successful at maintaining moisture tensions within an appropriate range of 5 kPa because the preset irrigation times used for water control could not compensate for the change in evapotranspiration during day and night. The response time and pattern of water contents for all of the tested soils measured with capacitance-based sensor probes were faster and more direct than those of water tensions measured with porous and ceramic cup-based tensiometers when water was applied, indicating water content would be a better control variable for automatic irrigation. The required water estimation-based irrigation method provided relatively stable control of moisture tension, even though somewhat lower tension values were obtained as compared to the target tension of -20 kPa, indicating that growers could expect to be effective in controlling low tensions ranging from -10 to -20 kPa with the required water estimation system.

Analyze of I-V Characteristics and Amorphous Sturcture by XRD Patterns (XRD 패턴에 의한 비정질구조와 I-V 특성분석)

  • Oh, Teresa
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.20 no.7
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    • pp.16-19
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    • 2019
  • A thinner film has superior electrical properties and a better amorphous structure. Amorphous structures can be effective in improving conductivity through a depletion effect. Research is needed on the Schottky contact, where potential barriers are formed, as a way to identify these characteristics. $SiO_2/SnO_2$ thin films were prepared to examine the amorphous structure and Schottky contact, $SiO_2$ thin films were prepared using Ar = 20 sccm. $SnO_2$ thin films were deposited using mixed gas with a flow rate of argon and oxygen at 20 sccm, and $SnO_2$ thin films were added by magnetron sputtering and treated at $100^{\circ}C$ and $150^{\circ}C$. To identify the conditions under which the amorphous structure was constructed, the XRD patterns were investigated and C-V and I-V measurements were taken to make Al electrodes and perform electrical analysis. The depletion layer was formed by the recombination of electrons and holes through the heat treatment process. $SiO_2/SnO_2$ thin films confirmed that the pores were well formed when heat treated at $100^{\circ}C$ and an electric current was applied over the micro area. An amorphous $SiO_2/SnO_2$ thin film with heat treatment at $100^{\circ}C$ showed no reflection at $33^{\circ}\;2{\theta}$ in the XRD pattern, and a reflection at $44^{\circ}2\;{\theta}$. The macroscopic view (-30 V

Monitoring of Concrete Deterioration Caused by Steel Corrosion using Electrochemical Impedance Spectroscopy(EIS) (EIS를 활용한 철근 부식에 따른 콘크리트 손상 모니터링)

  • Woo, Seong-Yeop;Kim, Je-Kyoung;Yee, Jurng-Jae;Kee, Seong-Hoon
    • Journal of the Korea Institute of Building Construction
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    • v.22 no.6
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    • pp.651-662
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    • 2022
  • The electrochemical impedance spectroscopy(EIS) method was used to evaluate the concrete deterioration process related to chloride-induced steel corrosion with various corrosion levels(initiation, rust propagation and acceleration periods). The impressed current technique, with four total current levels of 0C, 13C, 65C and 130C, was used to accelerate steel corrosion in concrete cylinder samples with w/c ratio of 0.4, 0.5, and 0.6, immersed in a 0.5M NaCl solution. A series of EIS measurements was performed to monitor concrete deterioration during the accelerated corrosion test in this study. Some critical parameters of the equivalent circuit were obtained through the EIS analysis. It was observed that the charge transfer resistance(Rc) dropped sharply as the impressed current increased from 0C to 13C, indicating a value of approximately 10kΩcm2. However, the sensitivity of Rc significantly decreased when the impressed current was further increased from 13C to 130C after corrosion of steel had been initiated. Meanwhile, the double-layer capacitance value(Cdl) linearly increased from 50×10-6μF/cm2 to 250×10-6μF/cm2 as the impressed current in creased from 0C to 130C. The results in this study showed that monitoring Cdl is an effective measurement parameter for evaluating the progress of internal concrete damages(de-bonding between steel and concrete, micro-cracks, and surface-breaking cracks) induced by steel corrosion. The findings of this study provide a fundamental basis for developing an embedded sensor and signal interpretation method for monitoring concrete deterioration due to steel corrosion at various corrosion levels.