• 제목/요약/키워드: eMRAM

검색결과 17건 처리시간 0.036초

모바일 시스템의 고속 스왑 지원을 위한 메모리 할당 및 회수 기법 (Memory Allocation and Reclamation Policies for Fast Swap Support in Mobile Systems)

  • 반효경
    • 한국인터넷방송통신학회논문지
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    • 제24권4호
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    • pp.29-33
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    • 2024

  • 최근 스마트폰을 통해 다양한 앱이 실행되면서 모바일 시스템의 메모리 요구량이 지속적으로 증가하고 있다. 메모리 공간이 소진될 경우 프로세스의 풋프린트를 스토리지의 스왑 영역에 백업하는 데스크탑과 달리, 스마트폰은 앱을 종료시켜 상당 부분의 문맥이 유실된다. 이는 스마트폰에서 스왑 지원 시 플래시메모리로의 대용량 I/O 작업이 심각한 지연을 초래하기 때문이다. 본 논문에서는 쓰기 연산이 플래시메모리에 비해 빠른 eMRAM을 모바일 시스템의 스왑 영역으로 사용할 경우 어떻게 효율적인 메모리 관리를 수행할 수 있는지에 대해 논의한다. 백업 스토리지가 플래시메모리인 파일시스템 영역과 eMRAM인 스왑 영역의 특성과, 해당 페이지의 참조 특성을 고려한 메모리 할당 및 회수를 통해 스마트폰의 I/O 성능을 평균 15% 개선할 수 있음을 보인다.

  • https://doi.org/10.7236/JIIBC.2024.24.4.29 인용 PDF HTML

SPIN ENGINEERING OF FERROMAGNETIC FILMS VIA INVERSE PIEZOELECTRIC EFFECT

  • Lee, Jeong-Won;Shin, Sung-Chul;Kim, Sang-Koog
    • 한국자기학회:학술대회 개요집
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    • 한국자기학회 2002년도 동계연구발표회 논문개요집
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    • pp.188-189
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    • 2002

  • One of the current goals in memory device developments is to realize a nonvolatile memory, i.e., the stored information maintains even when the power is turned off. The representative candidates for nonvolatile memories are magnetic random access memory (MRAM) and ferroelectric random access memory (FRAM). In order to achieve a high density memory in MRAM device, the external magnetic field should be localized in a tiny cell to control the direction of spontaneous magnetization. (omitted)

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Switching Issues for High Density MRAM

  • Kim K.;Cho Y.J.;Hwang I.J.;Kim K.S.;Jeong W.C.;Lee J.E.;Kim T W.
    • 한국자기학회:학술대회 개요집
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    • 한국자기학회 2005년도 동계학술연구발표회 및 2차 아시안포럼
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    • pp.216-216
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    • 2005

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High density plasma etching of MgO thin films in $Cl_2$/Ar gases

  • Xiao, Y.B.;Kim, E.H.;Kong, S.M.;Chung, C.W.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.213-213
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    • 2010

  • Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is one of the best semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. For the realization of high density MRAM, the etching of MTJ stack with good properties is one of a key process. Recently, there has been great interest in the MTJ stack using MgO as barrier layer for its huge room temperature MR ratio. The use of MgO barrier layer will undoubtedly accelerate the development of MTJ stack for MRAM. In this study, high-density plasma reactive ion etching of MgO films was investigated in an inductively coupled plasma of $Cl_2$/Ar gas mixes. The etch rate, etch selectivity and etch profile of this magnetic film were examined on vary gas concentration. As the $Cl_2$ gas concentration increased, the etch rate of MgO monotonously decreased and etch slop was slanted. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of MgO thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of MgO displayed better etch profiles. Finally, the clean and vertical etch sidewall of MgO films was achieved using $Cl_2$/Ar plasma at the optimized etch conditions.

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High density plasma etching of CoFeB and IrMn magnetic films with Ti hard mask

  • Xiao, Y.B.;Kim, E.H.;Kong, S.M.;Chung, C.W.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.233-233
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    • 2010

  • Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is a prominent candidate among prospective semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. The etching of MTJ stack with good properties is one of a key process for the realization of high density MRAM. In order to achieve high quality MTJ stack, the use of CoFeB and IrMn magnetic films as free layers was proposed. In this study, inductively coupled plasma reactive ion etching of CoFeB and IrMn thin films masked with Ti hard mask was investigated in a $Cl_2$/Ar gas mix. The etch rate of CoFeB and IrMn films were examined on varying $Cl_2$ gas concentration. As the $Cl_2$ gas increased, the etch rate monotonously decreased. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of CoFeB and IrMn thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of CoFeB and IrMn displayed better etch profiles. Finally, the clean and vertical etch sidewall of CoFeB and IrMn free layers can be achieved by means of thin Ti hard mask in a $Cl_2$/Ar plasma at the optimized condition.

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