• Title/Summary/Keyword: e-beam

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Formation of Plasma Damage-Free ITO Thin Flims on the InGaN/GaN based LEDs by Using Advanced Sputtering

  • Park, Min Joo;Son, Kwang Jeong;Kwak, Joon Seop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.312-312
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    • 2013

  • GaN based light emitting diodes (LEDs) are important devices that are being used extensively in our daily life. For example, these devices are used in traffic light lamps, outdoor full-color displays and backlight of liquid crystal display panels. To realize high-brightness GaN based LEDs for solid-state lighting applications, the development of p-type ohmic electrodes that have low contact resistivity, high optical transmittance and high refractive index is essential. To this effect, indiumtin oxide (ITO) have been investigated for LEDs. Among the transparent electrodes for LEDs, ITO has been one of the promising electrodes on p-GaN layers owing to its excellent properties in optical, electrical conductivity, substrate adhesion, hardness, and chemical inertness. Sputtering and e-beam evaporation techniques are the most commonly used deposition methods. Commonly, ITO films on p-GaN by sputtering have better transmittance and resistivity than ITO films on p-GaN by e-bam evaporation. However, ITO films on p-GaN by sputtering have higher specific contact resistance, it has been demonstrated that this is due to possible plasma damage on the p-GaN in the sputtering process. In this paper, we have investigated the advanced sputtering using plasma damage-free p-electrode. Prepared the ITO films on the GaN based LEDs by e-beam evaporation, normal sputtering and advanced sputtering. The ITO films on GaN based LEDs by sputtering showed better transmittance and sheets resistance than ITO films on the GaN based LEDs by e-beam evaporation. Finally, fabricated of GaN based LEDs by using advanced sputtering. And compared the electrical properties (measurement by using C-TLM) and structural properties (HR-TEM and FE-SEM) of ITO films on GaN based LEDs produced by e-beam evaporation, normal sputtering and advanced sputtering. As a result, It is expected to form plasma damage free-electrode, and better light output power and break down voltage than LEDs by e-beam evaporation and normal sputter.

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Electrical Properties and Defect States in ZnO Substrates Irradiated by MeV Electron-beam (고 에너지 전자빔 조사에 따른 ZnO 기판의 결함생성 및 전기적 특성 변화)

  • Lee, Dong-Uk;Song, Hoo-Young;Han, Dong-Seok;Kim, Seon-Pil;Kim, Eun-Kyu;Lee, Byung-Cheol
    • Journal of the Korean Vacuum Society
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    • v.19 no.3
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    • pp.199-205
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    • 2010

  • The electrical properties and defect states in ZnO substrates were studied during high-energy electron beam irradiations. 1 MeV and 2 MeV electron-beam with dose of $1{\times}10^{16}$ electrons/$cm^2$ were irradiated on Zn-surface of the sample. In the sample irradiated by 1 MeV, the leakage current was increased by electron-beam induced surface defects, while the enhancement of on/off property and the decrease of leakage current appeared in the 2 MeV irradiated sample. From the deep level transient spectroscopy measurements for these samples, it showed that the defect states with the activation energies of $E_c$-0.33 eV and $E_v$+0.8 eV are generated during the high energy electron-beam irradiation. Especially, it considered that the $E_c$-0.33 eV state related with O-vacancy affects to their electrical properties.

  • https://doi.org/10.5757/JKVS.2010.19.3.199 인용 PDF KSCI

Transport of space charge between sub-pixels in AC-plasma cell discharge

  • Lee, S.B.;Park, E.Y.;Han, Y.G.;Moon, M.W.;Oh, P.Y.;Song, K.B.;Lee, H.J.;Son, C.G.;Jeong, S.H.;Yoo, N.L.;Hong, Y.J.;Jeong, S.J.;Kim, J.H.;Park, S.O.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.929-931
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    • 2006

  • In this experiment, we have investigated that the transported space charge between sub-pixels in AC-plasma cell discharge. The test pulse 30 V, $5{\mu}s$ was applied to the address electrodes of neighbor cells of discharge occurred cells. And we have measured the transported space charge between sub-pixels in accordance with the various last sustain pulse widths t(time gap between the rising edges of sustain and test pulses) of 0.2 to $3{\mu}s$. It was observed that the peak value of transported space charge has been shown to be 21.5pC at $1.0{\mu}s$. And the IR peak value have been occured after $0.51{\mu}s$ with respect to sustain voltage.

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Influence of gas mixture He-Ne-Xe on the vacuum ultraviolet intensity in ac-PDPs.

  • Yoo, N.L.;Jung, K.B.;Lee, J.H.;Lee, S.B.;Han, Y.K.;Jeong, S.H.;Lee, H.J.;Son, C.G.;Lim, J.E.;Oh, P.Y.;Moon, M.W.;Jeoung, J.M.;Ko, B.D.;Cho, G.S.;Uhm, H.S.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1221-1224
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    • 2005

  • The improvement of luminance and luminous efficiency is the one of the most important parts in AC-PDPs. To achieve high luminance and luminous efficiency, high VUV emission efficiency is needed. We measured the emission spectra of the vacuum ultraviolet(VUV) rays in surface discharge AC-PDP with ternary gas mixture of He-Ne-Xe. The influence of He-Ne-Xe gas-mixture ratio on excited $Xe^{\ast}$ resonant atoms and $Xe_2\;^{\ast}$ dimers has been investigated. It is found that luminous efficiency of ternary gas mixture, He-Ne-Xe, is shown to be much higher than that of binary gas mixture of Ne-Xe. For improving discharge luminous efficiency, we have studied VUV emission characteristics of ternary gas mixture, He(50%)-Ne-Xe and He(70%)-Ne-Xe with Xe concentration and filling gas pressure.

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