• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.1
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• pp.73-80
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• 2016

The preliminary test for the dual mode plasma torch system was carried out to explore the operation properties in advance. The dual mode plasma torch system that is able to operate in transferred, non-transferred, or dual mode is very adequate for melting the mixed wastes including nonconductive materials such as concrete, asbestos, etc. since it exploits both the high efficiency of heat transfer to the melt in transferred mode and stable operation in non-transferred mode. Also, system operation including restarting is reliable and very easy. A stationary melter with a refractory structure was designed and manufactured considering the melting behavior of slags to minimize the refractory erosion. The power supply for the dual mode plasma torch system built with high power insulated gate bipolar transistor (IGBT) modules has functions for both current control and voltage control and is sufficient to suppress the harmonics during the operation of the plasma torch. The power supply provides two different voltages for transferred operation and non-transferred. It is confirmed that the operation voltage in transferred is always higher than non-transferred. The dual mode plasma torch system was successfully developed and is under operation for a melting experiment to optimize operation data.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.136.2-136.2
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• 2015

반도체 제조는 chip의 성능 향상 및 단가 하락을 위해 지속적으로 pattern size가 nano size로 감소해 왔고, capacitor 용량은 증가해 왔다. 이러한 현상은 contact hole의 aspect ratio를 지속적으로 증가시킨바, 그에 따라 최적의 HARC (high aspect ratio contact)을 확보하는 적합한 dry etch process가 필수적이다. 그러나 HARC dry etch process는 많은 critical plasma properties 에 의존하는 매우 복잡한 공정이다. 따라서, critical plasma properties를 적절히 조절하여 higher aspect ratio, higher etch selectivity, tighter critical dimension control, lower P2ID과 같은 plasma characteristics을 확보하는 것이 요구된다. 현재 critical plasma properties를 제어하기 위해 다양한 plasma etching 방법이 연구 되어왔다. 이 중 plasma를 낮은 kHz의 frequency에서 on/off 하는 pulsed plasma etching technique은 nanoscale semiconductor material의 etch 특성을 효과적으로 향상 시킬 수 있다. 따라서 본 실험에서는 dual-frequency capacitive coupled plasma (DF-CCP)을 사용하여 plasma operation 동안 duty ratio와 pulse frequency와 같은 pulse parameters를 적용하여 plasma의 특성을 각각 제어함으로써 etch selectivity와 uniformity를 향상 시키고자 하였다. Selective SiO2 contact etching을 위해 top electrode에는 60 MHz pulsed RF source power를, bottom electrode에는 2MHz pulse plasma를 인가하여 synchronously pulsed dual-frequency capacitive coupled plasma (DF-CCP)에서의 plasma 특성과 dual pulsed plasma의 sync. pulsing duty ratio의 영향에 따른 etching 특성 등을 연구 진행하였다. 또한 emissive probe를 통해 전자온도, OES를 통한 radical 분석으로 critical Plasma properties를 분석하였고 SEM을 통한 etch 특성분석과 XPS를 통한 표면분석도 함께 진행하였다. 그 결과 60%의 source duty percentage와 50%의 bias duty percentage에서 가장 향상된 etch 특성을 얻을 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.156.2-156.2
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• 2015

반도체 소자의 크기가 나노사이즈로 줄어들기 때문에, 건식식각의 중요성이 강조되고 있다. dual plasma source를 사용함으로써 plasma 밀도, 이온충돌에너지, 이온플럭스를 조절 가능하다. Low frequency로 이온에너지를 조절하고, high frequency로 이온플럭스를 일반적으로 조절한다. 본 연구는 inductively coupled plasma (ICP)와 capacitively coupled plasma (CCP)를 사용하는 dual plasma source이다. ICP는 AE RPS로 2.4 MHz를 사용하고, CCP는 AE RFX-600으로 13.56 MHz이다. single L-probe는 Hiden ESPion이고, quadrupole mass spectrometer (QMS)는 INFICON CPM-300이다. chuck에 CCP가 인가되고, ICP는 SUS mesh를 거쳐서 영향을 미친다. Gas는 Ar, Ar+CF4 두 조건에서 비료를 하였다. Single L-probe를 이용하여 플라즈마를 측정한 결과 CCP만 인가하였을 때, Te 2.05 eV, Ne 4.07E+10 #/cm3, Ni 5.82E+10 #/cm3의 결과를 얻을 수 있었다. ICP를 방전하고 mesh를 통해서 chuck으로 입사하는 이온을 측정한 결과 mesh에 의해 이온이 중성화되어 거의 입사하지 않음을 확인할 수 있었다. 최종적으로 이온의 영향이 상쇄되고, 라디칼의 영향이 증가하여 높은 etch rate와 선택비를 가지며, 등방성 식각의 영향이 커질 것으로 사료된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.472-472
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• 2011

The capacitive coupled plasma (CCP) has been extensively used in the semiconductor industry because it has not only good uniformity, but also low electron temperature. But CCP source has some problems, such as difficulty in varying the ion bombardment energy separately, low plasma density, and high processing pressure, etc. In this reason, dual frequency CCP has been investigated with a separate substrate biasing to control the plasma parameters and to obtain high etch rate with high etch selectivity. Especially, in this study, we studied on the etching of $SiO_2$ by using the pulse-time modulation in the dual-frequency CCP source composed of 60 MHz/ 2 MHz rf power. By using the combination of high /low rf powers, the differences in the gas dissociation, plasma density, and etch characteristics were investigated. Also, as the size of the semiconductor device is decreased to nano-scale, the etching of contact hole which has nano-scale higher aspect ratio is required. For the nano-scale contact hole etching by using continuous plasma, several etch problems such as bowing, sidewall taper, twist, mask faceting, erosion, distortions etc. occurs. To resolve these problems, etching in low process pressure, more sidewall passivation by using fluorocarbon-based plasma with high carbon ratio, low temperature processing, charge effect breaking, power modulation are needed. Therefore, in this study, to resolve these problems, we used the pulse-time modulated dual-frequency CCP system. Pulse plasma is generated by periodical turning the RF power On and Off state. We measured the etch rate, etch selectivity and etch profile by using a step profilometer and SEM. Also the X-ray photoelectron spectroscopic analysis on the surfaces etched by different duty ratio conditions correlate with the results above.

• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.11-14
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• 2005

In plasma processing reactors, it is common practice to control plasma density and ion bombardment energy by manipulating excitation voltage and frequency. In this paper, a dually excited capacitively coupled rf plasma reactor is self-consistently simulated with a three moment model. Effects of phase differences between primary and secondary voltage waves, simultaneously modulated at various combinations of commensurate frequencies, on plasma properties are investigated. The simulation results show that plasma potential and density as well as primary self-dc bias are nearly unaffected by the phase lag between the primary and the secondary voltage waves. The results also show that, with the secondary frequency substantially lower than the primary frequency, secondary self·do bias remains constant regardless of the phase lag. As the secondary frequency approaches to the primary frequency, however, the secondary self-dc bias becomes greatly altered by the phase lag, and so does the ion bombardment energy at the secondary electrode. These results demonstrate that ion bombardment energy can be more carefully controlled through plasma simulation.

• Journal of the Korean institute of surface engineering
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• v.39 no.3
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• pp.137-141
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• 2006

Process window for infinite etch selectivity of silicon nitride $(Si_3N_4)$ layers to ArF photoresist (PR) was investigated in dual frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters such as low frequency power $(P_{LF})$, $CH_2F_2$ and $H_2$ flow rate in $CH_2F_2/H_2/Ar$ plasma. It was found that infinite etch selectivities of $Si_3N_4$ layers to the ArF PR on both blanket and patterned wafers can be obtained for certain gas flow conditions. The etch selectivity was increased to the infinite values as the $CH_2F_2$ flow rate increases, while it was decreased from the infinite etch selectivity as the $H_2$ flow rate increased. The preferential chemical reaction of the hydrogen with the carbon in the polymer film and the nitrogen on the $Si_3N_4$ surface leading to the formation of HCN etch by-products results in a thinner steady-state polymer and, in turn, to continuous $Si_3N_4$ etching, due to enhanced $SiF_4$ formation, while the polymer was deposited on the ArF photoresist surface.

• Journal of the Semiconductor & Display Technology
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• v.13 no.3
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• pp.39-43
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• 2014

The effect of electrode charging on the ion energy distribution (IED) was investigated in the dual-frequency capacitively coupled plasma source which was powered of 100 MHz RF at the top electrode and 400 kHz bias on the bottom electrode. The charging property was analyzed with the distortion of the measured current and voltage waveforms. The capacitance and the resistance of electrode sheath can change the property of ion and electron charging on the electrode so it is sensitive to the plasma density which is controlled by the main power. The ion energy distribution was estimated by equivalent circuit model, being compared with the measured distribution obtained from the ion energy analyzer. Results show that the low frequency bias power changes effectively the low energy population of ion in the energy distribution.

• Proceedings of the Korean Vacuum Society Conference
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• 2004.08a
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• pp.78-78
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• 2004

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.284-284
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• 2011

Recently, the increasing degree of device integration in the fabrication of Si semiconductor devices, etching processes of nano-scale materials and high aspect-ratio (HAR) structures become more important. Due to this reason, etch selectivity control during etching of HAR contact holes and trenches is very important. In this study, The etch selectivity and etch rate of TEOS oxide layer using ACL (amorphous carbon layer) mask are investigated various process parameters in CH2F2/C4F8/O2/Ar plasma during etching TEOS oxide layer using ArF/BARC/SiOx/ACL multilevel resist (MLR) structures. The deformation and etch characteristics of TEOS oxide layer using ACL hard mask was investigated in a dual-frequency superimposed capacitively coupled plasma (DFS-CCP) etcher by different fHF/ fLF combinations by varying the CH2F2/ C4F8 gas flow ratio plasmas. The etch characteristics were measured by on scanning electron microscopy (SEM) And X-ray photoelectron spectroscopy (XPS) analyses and Fourier transform infrared spectroscopy (FT-IR). A process window for very high selective etching of TEOS oxide using ACL mask could be determined by controlling the process parameters and in turn degree of polymerization. Mechanisms for high etch selectivity will discussed in detail.

• Journal of Power Electronics
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• v.9 no.1
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• pp.93-99
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• 2009

A new plasma display panel sustaining driver using single side sustaining technique with a dual resonant method is proposed in this paper. Since this circuit enables to keep device voltage stress same as the prior circuit, it can be a low cost circuit compared to a conventional driver. To integrate the sustaining function into one side with a single power source in the driver, a charge pump method is adopted to make negative sustaining voltage and to achieve dual resonant energy recovery on the sustaining modes.