• Journal of Magnetics
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• v.13 no.2
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• pp.53-56
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• 2008

This study proposes a simple nano-patterning process for the fabrication of magnetic nanodot arrays on a large area substrate. Ni nanodots were fabricated on a large area (4 inches in diameter) Si substrate using the soft lithographic technique using self-assembled surface micelles of Polystyrene-block-Poly(methyl methacrylate) (PS-b-PMMA) diblock copolymer formed at the air/water interface as a mask. The hexagonal array of micelles was successfully transferred to a Ni thin film on a Si substrate using the Langmuir-Blodgett technique. After ion-mill dry etching, a magnetic Ni nanodot array with a regular hexagon array structure was obtained. The Ni nanodot array showed in-plane easy axis magnetization and typical soft magnetic properties.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1269-1271
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• 2008

We find some array mura are caused by S/D bridge or channel open in 4 mask process. The gray tone PR thickness non-uniformity is the main reason of these defects. By the adjustment of exposure and dry etch parameters, S/D bridge and channel open ratio drops by 10.87%.

• Proceedings of the IEEK Conference
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• 2001.10a
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• pp.711-714
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• 2001

A new technology to make fluoride gas such as NF$_3$contained in the exhaust gas from semiconductor manufacturing plants convert directly into a harmless substance have been established and new concept on the disposal treatment of global warming gases were presented. Experimental results verify that the chemical reactions can be take place at substantially lower temperature of 80-40$0^{\circ}C$ as compared with the combustion treatment method. Reaction product is mainly metal fluoride which is a harmless and a valuable chemical material as one of new resources. The other favorable characteristics are that the continuous treatment is possible at a low temperature under atmospheric pressure. Furthermore this process is compact, easily controllable and safely operable at low running cost. This paper concerns with a new harmless disposal treatment of toxic global warming gas.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.934-937
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• 1999

MMIC 제작을 위한 단일 반도체 공정으로써 PECVD를 이용한 Si₃N₄의 증착, RIE를 이용한 CaAs via-hole건식식각, 그리고 airbridge 공정조건을 위한 실험 및 분석 작업을 수행하였다. Si₃N₄의 증착 실험에서는 굴절률이 2인 조건을, GaAs via-hole 식각 실험에서는 최적화된 thru-via의 모양과 식각률을 갖는 조건을, airbridge 실험에서는 polyimide coating 및 건식 식각 조건과 금 도금 및 습식 식각의 최적 조건들을 찾아내었다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.115-121
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• 1995

A mask for x-ray lithography is fabricated with SiN membrane and WTi absorber. SiN membrane is deposited by plasma enhanced chemical vapor deposition, and the stress of SiN membrane is controlled to be less than 100 MPa by rapid thermal annealing. WTi absorber is reactively deposited by DC-magnetron type sputter, and the working gases are argon and nitrogen. Added nitrogen is contributed to the stress of WTi absorber. The stress of WTi absorber is controlled to be less than $\pm$ 100 MPa by controlling the deposition pressure. 10$\mu$m WTi pattern is delineated on SiN membrane by dry etching technique.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.54-54
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• 2005

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.55-55
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• 2005

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.258-258
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• 2009

• Proceedings of the KOSOMBE Conference
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• v.1998 no.11
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• pp.147-148
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• 1998

In this paper, we developed the process for depth-probe type silicon microelectrode arrays. The process consists of four mask steps only. The steps are for defining sites, windows, and for shaping probe using plasma etch from above, and for shaping using wet etch from below, respectively. The probe thickness is controlled by dry etching, not by impurity diffusion. We used gold electrodes with a triple dielectric system consisting of oxide/nitride/oxide. The shank of the probe taper from 200um to tens of urn tip and has 30 um thickness.

• Bulletin of the Korean Chemical Society
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• v.33 no.1
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• pp.83-89
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• 2012

Due to the potential importance and usefulness, usage of highly ordered nanoporous anodized aluminum oxide can be broadened in industry, when highly ordered anodized aluminum oxide can be placed on a substrate with controlled thickness. Here we report a facile route to highly ordered nanoporous alumina with the thickness of hundreds-of-nanometer on a silicon wafer substrate. Hexagonally or tetragonally ordered nanoporous alumina could be prepared by way of thermal imprinting, dry etching, and anodization. Adoption of reusable polymer soft molds enabled the control of the thickness of the highly ordered porous alumina. It also increased reproducibility of imprinting process and reduced the expense for mold production and pattern generation. As nanoporous alumina templates are mechanically and thermally stable, we expect that the simple and costeffective fabrication through our method would be highly applicable in electronics industry.