• 제목/요약/키워드: dry ashing

검색결과 23건 처리시간 0.031초

Atmospheric Plasma application for dry cleaner, PR ashing & PI rework in the $5^{th}$ generation and beyond LCD production

  • Park, Young-Chun;Lee, Bong-Ju
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.421-424
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    • 2003
  • An AP plasma technology has been developed for the application of dry cleaner, PR ashing and PI rework in the large glass size. The technology is cost effective, environment friendly, and best fits for coming generation LCD production since the design is easily scalable to bigger size glasses. Surface cleaning results based on the contact angle study has been presented for $5^{th}$ generation LCD bare glass. PR ashing results and various parametric studies have been also presented.

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대기압 플라즈마 Photoresist Ashing에 관한 연구

  • 악흔;김윤환;이상로
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.464-464
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    • 2012
  • 본 연구에서는 DBD (Dielectric Barrier Discharge)방식을 통해 발생된 대기압 plasma를 이용한 Photoresist (PR) Ashing에 관한 연구를 하였다. 사용된 DBD 반응기는 기존의 blank planar plate 형태의 Power가 인가되는 anode 부분과 Dielectric Barrier 사이 공간을 액상의 도전체로 채워 넣은 형태의 전극이 사용 하였으며, 인가 Power는 40 kHz AC 최대 인가 전압 15 kV를 사용 하였고(본 연구에서 인가 power는 30 KHz,전압 14 KV를 고정시킴) 플라즈마를 발생시 라디칼의 활성화를 유지하기 위해 전극 온도가 $180^{\circ}C$ 정하였다. Feeding 가스는 N2, 반응가스로는 CDA(Clean Dry Air), SF6와 CF4가스를 사용 하였으며 모든 공정은 In-line type으로 시편을 처리 하였다. CDA ratio의 경우에 질소대비 0.2%때 이송속도 30 mm/sec 1회 처리 기존 PR ashing은 최대 $320{\AA}$의 ashing 두께를 얻을 수 있었다. SF6와 CDA가스를 같이 반응하는 경우 ratio는 CDA : SF6 = 0.6% : 0.6%에서 PR ashing rate이 $841{\AA}/pass$의 값을 얻을 수 있었고, CDA가스만 첨가하는 경우보다 약2.6배 증가함을 관찰할 수 있었다. CF4 가스를 사용하는 경우 ratio는 CDA : CF4 = 0.2% : 0.2%에서 PR ashing rate이 $687{\AA}/pass$의 값을 얻을 수 있으며 CDA가스만 첨가하는 경우보다 약 2.1배 증가함을 관찰할 수 있었다. 그리고 PR ashing rate가 가스첨가종류와 비율에 따라서 변화함을 관찰하였고 최적조건을 찾기 위해 연구를 진행하였다. 추후 PR ashing rate가 향상을 하기 위해 가스혼합비율 및 stage 온도등 조건을 조절하여 공정최적조건을 얻기 위해 연구를 진행하였다.

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습식 분해법을 이용한 해산물 중 총 비소 분석을 위한 전처리 방법 연구 (Study on the Pretreatment of Seafood for the Determination of Total Arsenic using Wet Ashing Method)

  • 김선태;박경수
    • 분석과학
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    • 제16권6호
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    • pp.509-512
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    • 2003
  • Pretreatment method for the determination of total arsenic in seafood sample was studied. NIST SRM 1566a oyster tissue ($14.0{\pm}1.2mg\;As/kg$) as a standard arsenic compound in order to establish the decomposition method. We confirmed that the best way for pretreatment of seafoods to analyze total arsenic content precisely was $HNO_3-H_2SO_4-HCIO_4$ method by comparison of two methods which are dry ashing and wet ashing methods.

치석의 무기질 분석에 관한 연구

  • 김현풍
    • 대한치과의사협회지
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    • 제12권7호
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    • pp.521-526
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    • 1974
  • This observation was carried out to investigate the inorganic constituents of dental calculus of varying locations and different ages. Supragingival calculus was obtained from 540 patients with the periodontal disease. The results were as follows : 1. The weight loss rate in ashing by aging was the highest in the 2nd decade (63.7%) and followed in order by 3rd decade (60.8%), seventh decade 959.8%), fourth decade (55.9%), sixth decade (52.6%) and fifth decade (43.2%). 2. The weight loss rate by ashing was more prominent in the buccal surfaces of the upper posterior teeth (62.0%) than in the lingual surface of the lower anterior teeth (59.7%). 3. The difference in contents of the inorganic constituents by sex was not remarkable. (male, Ca:373.0 P:333.9, female, Ca: 380.2, P: 339.6 ㎍/mg dry weight) 4. In the dry calulus, contents of the inorganic constituents were as follows: Ca:325.8 P:269.10 Mg:1.21 Na:8.44 K:1.32, Zn:0.67 ㎍/mg. 5. The Ca/P ratio was the lowest in the upper anterior region (1.11) and the highest in the lower posterior region (1.29) and the average was 1.20.

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퇴비화 과정중 전처리방법에 따른 중금속함량의 변화 (Effect of Pre-treatment Methods on Heavy Metals Analysis of organic Solid Wastes during Composting)

  • 박준석;안병구;하은아
    • 유기물자원화
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    • 제10권2호
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    • pp.117-124
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    • 2002
  • 본 연구는 퇴비화 과정 중 일어나는 중금속의 변화를 살펴보고 시료 전처리 방법이 중금속 농도에 미치는 영향을 평가하고자 실시하였다. 전처리 방법으로는 건식, $HNO_3-HClO_4$, aqua-regia, 염산환류, $HNO_3-HClO_4-HF$, 습식가압 분해방법을 시용하였으며, 습식가압 분해방법에서는 각각 $HNO_3$, HCl, $HNO_3(2+1)$의 세 가지 산을 시용하였다. 표준물질 SRM 2781에 대한 시험결과 Cr과 Zn의 회수율은 50-60% 정도로 낮았고, Ni은 100% 이상으로 가장 높았으며, Cd과 Cu는 80-90% 수준이었으며, 건식분해 방법은 회수율이 가장 낮았다. 퇴비원료 물질에 대한 시험에서 습식가압 분해방법은 다른 방법보다 3-4배 이상 높은 Cd농도가 검출되었으며, 건식분해 방법의 회수율은 전반적으로 가장 낮은 회수율을 나타내었다. 퇴비화 기간동안 Cd은 습식가압분해 방법에서 가장 높은 농도가 검출되었다. Cr은 건식분해방법에서 Cu는 aqua-regia분해와 염산환류분해에서 가장 낮게 검출되었다. Pb과 Zn은 중금속 항목중에서 분해방법간 차이가 적었다. Ni은 건식분해에서 다른 방법에 비하여 약 2-6배정도까지 낮게 검출되었다.

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Removal of Post Etch/Ash Residue on an Aluminum Patterned Wafer Using Supercritical CO2 Mixtures with Co-solvents and Surfactants: the Removal of Post Etch/Ash Residue on an Aluminum Patterned Wafer

  • You, Seong-sik
    • 반도체디스플레이기술학회지
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    • 제16권2호
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    • pp.55-60
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    • 2017
  • The supercritical $CO_2$ (sc-$CO_2$) mixture and the sc-$CO_2$-based Photoresist(PR) stripping(SCPS) process were applied to the removal of the post etch/ash PR residue on aluminum patterned wafers and the results were observed by scanning of electron microscope(SEM). In the case of MDII wafers, the carbonized PR was able to be effectively removed without pre-stripping by oxygen plasma ashing by using sc-$CO_2$ mixture containing the optimum formulated additives at the proper pressure and temperature, and the same result was also able to be obtained in the case of HDII wafer. It was found that the efficiency of SCPS of ion implanted wafer improved as the temperature of SCPS was high, so a very large amount of MEA in the sc-$CO_2$ mixture could be reduced if the temperature could be increased at condition that a process permits, and the ion implanted photoresist(IIP) on the wafer was able to be removed completely without pre-treatment of plasma ashing by using the only 1 step SCPS process. By using SCPS process, PR polymers formed on sidewalls of metal conductive layers such as aluminum films, titanium and titanium nitride films by dry etching and ashing processes were removed effectively with the minimization of the corrosion of the metal conductive layers.

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담배 엽 중 칼륨 분석법의 평가 (Evaluation of Analytical Method for Determination of Potassium in Tobacco Leaf)

  • 조성일;김미주;지상운;김용하;민영근
    • 한국연초학회지
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    • 제28권1호
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    • pp.51-57
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    • 2006
  • This study was carried out to improve and evaluate the analytical method for determination of potassium in tobacco leaf by various pre-treatment techniques. The time requirment of various pre-treatments was about 10 hour for dry ashing and 6 hour for microwave digestion and 3 hour for sonication. The results of recover in both pre-treatment techniques, microwave digestion and sonication, is greater than 85 % stably with reproducibility(RSD %) on replicates of less than 3 %. However the mean values for microwave digestion were lower than certified standard value of NlST SRM. Compared to the other pre-treatment techniques, analytical results for sonication technique strictly improved the accuracy and precision. In conclusion, the use of the simple sonication technique seems to be efficient for the determination of potassium in tobacco leaf in consideration for both the accuracy and reproducibility.

현미중(玄米中) 카드뮴의 분석방법(分析方法)에 관(關)한 비교연구(比較硏究) (Comparison of the analytical methods for Cd in brown rice)

  • 김복영;이민효
    • 한국환경농학회지
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    • 제14권3호
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    • pp.338-344
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    • 1995
  • 현미중 카드뮴의 분석을 위한 보다 효율적인 방법을 찾기 위해 현미중 카드뮴의 공정시험방법을 표준으로 수종의 습식 및 건식방법에 대해 카드뮴의 회수율, 표준편차 및 표준방법과의 상관성등을 비교, 검토한 결과 현미 시료량 50g, 회화온도 $600^{\circ}C$의 건식방법은 회수율이 79.6%로 표준분석방법(87.2%)을 제외한 타 분석방법보다 높고, 표준편차도 평균${\pm}2.6$으로 표준분석방법의 평균+6.4 보다 약간 작았으며, 표준분석방법으로 분석된 카드뮴함량과의 상관성($r=0.977^{\ast\ast}$)도 크게 높아 본 방법은 습식으로 분해하는 현행 수질오염 공정시험 방법과 함께 현미중 카드뮴 분석방법으로 사용하여도 좋을 것으로 판단된다.

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One- and Two-Dimensional Arrangement of DNA-Templated Gold Nanoparticle Chains using Plasma Ashing Method

  • Kim, Hyung-Jin;Hong, Byung-You
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.291-291
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    • 2010
  • Electron-beam lithography (EBL) process is a versatile tool for a fabrication of nanostructures, nano-gap electrodes or molecular arrays and its application to nano-device. However, it is not appropriate for the fabrication of sub-5 nm features and high-aspect-ratio nanostructures due to the limitation of EBL resolution. In this study, the precision assembly and alignment of DNA molecule was demonstrated using sub-5 nm nanostructures formed by a combination of conventional electron-beam lithography (EBL) and plasma ashing processes. The ma-N2401 (EBL-negative tone resist) nanostructures were patterned by EBL process at a dose of $200\;{\mu}C/cm2$ with 25 kV and then were ashed by a chemical dry etcher at microwave (${\mu}W$) power of 50 W. We confirmed that this method was useful for sub-5 nm patterning of high-aspect-ratio nanostructures. In addition, we also utilized the surface-patterning technique to create the molecular pattern comprised 3-(aminopropyl) triethoxysilane (APS) as adhesion layer and octadecyltrichlorosilane (OTS) as passivation layer. DNA-templated gold nanoparticle chain was attached only on the sub-5 nm APS region defined by the amine groups, but not on surface of the OTS region. We were able to obtain DNA molecules aligned selectively on a SiO2/Si substrate using atomic force microscopy (AFM).

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