• The Magazine of the IEIE
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• v.37 no.8
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• pp.50-59
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• 2010

$0.18-{\mu}m$ high voltage technology 13.5V high voltage well-based symmetric EDMOS isolated by MTI was designed and fabricated. Using calibrated process and device model parameters, the characteristics of the symmetric and asymmetric EDMOS have been simulated. The asymmetric EDMOS has higher performance, better $R_{sp}$ / BVDSS figure-of-merit, short-channel immunity and smaller pitch size than the symmetric EDMOS. The asymmetric EDMOST is a good candidate for low-power and smaller source driver chips. The low voltage logic well-based EDMOS process has advantages over high voltage well-based EDMOS in process cost by eliminating the process steps of high-voltage well/drift implant, high-temperature long-time thermal steps, etc. The specific on-resistance of our well-designed logic well-based EDMOSTs is compatible with the smallest one published. TCAD simulation and measurement results show that the improved logic well-based nEDMOS has better electrical characteristics than those of the conventional one. The improved EDMOS proposed in this paper is an excellent candidate to be integrated with low voltage logic devices for high-performance low-power low-cost chips.

• Journal of Power Electronics
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• v.14 no.2
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• pp.292-301
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• 2014

This paper presents a new configuration for a three-phase multilevel voltage source inverter. The main bridge is built from a classical three-phase two-level inverter and three bidirectional switches. A variable DC-link employing two unequal DC voltage supplies and four switches is connected to the main circuit in such a way that the proposed inverter produces four levels in the output voltage waveform. In order to obtain the desired switching gate signals, the fundamental frequency staircase modulation technique is successfully implemented. Furthermore, the proposed structure is extended and compared with other types of multilevel inverter topologies. The comparison shows that the proposed inverter requires a smaller number of power components. For a given number of voltage steps N, the proposed inverter requires N/2 DC voltage supplies and N+12 switches connected with N+7 gate driver circuits, while diode clamped or flying capacitor inverters require N-1 DC voltage supplies and 6(N-1) switches connected with 6(N-1) gate driver circuits. A prototype of the introduced configuration has been manufactured and the obtained simulation and experimental results ensure the feasibility of the proposed topology and the validity of the implemented modulation technique.

• 제어로봇시스템학회:학술대회논문집
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• 1996.10a
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• pp.409-412
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• 1996

Ultrasonic sensors are widely used in various applications due to advantages of low cost, simplicity in construction, mechanical robustness, and little environmental restriction in usage. But the main purposes of the noncontact sensing are rather narrowly confined within object detection and distance measurement. For the application of object recognition, ultrasonic sensors exhibit several shortcomings of poor directionality which results in low spatial resolution of objects, and specularity which gives frequent erroneous range readings. To resolve these problems in object recognition, an array of the sensor has been used. To improve the spatial resolution, more number of sensors are used in essence throughout the various devices of the sensor arrays. Under the disguise of a fixed number of the sensors, the array can be shifted mechanically in several steps. In this paper we propose a practical sensor resolution enhancement method using an electronic circuit accompanying the sensor array. The circuit changes the transmitter output voltage in several steps. Using the known sensor characteristics, a set of different return echo signals provide enhanced spatial resolution. The improvement is obtained with neither the cost of the increased number of the sensors nor extra mechanical devices.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.10
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• pp.10-18
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• 2006

In this thesis paper the effect that the change in the brightness of headlights has on a driver's perception had been researched. For this research, an indoor laboratory was constructed and designed. Then, a system to measure the reaction braking time of finding obstacle and the subject's brain waves after a moment of change in the headlamp's brightness was constructed. And before the real experiment was began, the trial experiment to decide test time, subject's rest time, detailed experimental steps, the headlamp's patterns of voltage change and an obstacle course was executed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.894-900
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• 2006

This paper reports the fabrication and characterization of $32{\times}32$ thermal cantilever array for nano-scaled memory device applications. The $32{\times}32$ thermal cantilever array with integrated tip heater has been fabricated with micro-electro-mechanical systems(MEMS) technology on silicon on insulator(SOI) wafer using 9 photo masking steps. All of single-level cantilevers(1,024 bits) have a p-n junction diode in order to eliminate any electrical cross-talk between adjacent cantilevers. Nonlinear electrical characteristic of fabricated thermal cantilever shows its own thermal heating mechanism. In addition, n-channel high-voltage MOSFET device is integrated on a wafer for embedding driver circuitry.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1003-1007
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• 2005

We demonstrate color video displays driven by carbon nanotube electron field emitters. These nanotubes are incorporated into the device by selective growth using low temperature chemical vapor deposition. The device structure is simple and inexpensive to fabricate, and a 45 V switching voltage enables the use of low cost driver electronics. The prototype units are sealed 4.6” diagonal displays with 726 um pixels. They represent a piece of a 42” diagonal 1280x720 high definition television. The carbon nanotube growth process is performed as the last processing step and creates nanotubes ready for field emission. No activation post-processing steps are required, so chemical and particulate contamination is not introduced. Control of the nanotube dimension, orientation, and spatial distribution during growth enables uniform, highquality, color video performance.