• 한국산학기술학회논문지
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• 제13권9호
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• pp.4294-4301
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• 2012

본 연구는 내진설계 되지 않은 학교시설물 중 다수를 차지하는 1980년도 표준설계 도면(건설부 공고 제130호, 1980년 10월 28일)에 의하여 건설된 국내에 현존하는 4층 모멘트 연성골조의 학교건물을 대상으로 이력모델의 특성과 지진파의 특성에 따라 표준학교건물의 비탄성지진거동을 분석하고자 한다. El-centro지진은 주파수 성분과 강진지속시간의 특성에 의하여 표준학교건물의 단변방향 층전단력, 층간변위비, 층변위 응답에 매우 큰 영향을 미치며 특히 수정다케다모델 선택시 응답의 차이가 매우 크게 나타남을 알 수 있다. 층전단력의 경우 최대 46%, 층간변위비의 경우 최대 70%, 층변위의 경우 최대 59%의 편차를 보인다. Santa Monica지진은 장변방향의 응답에서 이력모델별 편차가 더 크게 나타났으며, 층전단력은 최대 59%, 층간변위비는 최대 65%, 층변위는 최대 50%의 편차를 보였다. 이는 장변방향의 고유주기가 단변방향에 비하여 크기 때문에 1초이상의 주기성분이 많은 Santa Monica지진의 특성에 의한 것으로 판단된다. Taft지진은 이력모델에 따른 층간변위비와 층변위 응답의 편차가 가장 적은 것으로 나타났으며, 층간변위비는 최대 15%, 층변위는 최대 5%의 편차를 보여 변위응답에 있어서 이력모델에 가장 의존도가 적은 결과를 얻을 수 있을 것으로 판단 된다.

• 로봇학회논문지
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• 제8권1호
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• pp.29-36
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• 2013

This paper presents a sensitivity optimization of a MEMS (microelectromechanical systems) gyroscope for a magnet-gyro system. The magnet-gyro system, which is a guidance system for a AGV (automatic or automated guided vehicle), uses a magnet positioning system and a yaw gyroscope. The magnet positioning system measures magnetism of a cylindrical magnet embedded on the floor, and AGV is guided by the motion direction angle calculated with the measured magnetism. If the magnet positioning system does not measure the magnetism, the AGV is guided by using angular velocity measured with the gyroscope. The gyroscope used for the magnet-gyro system is usually MEMS type. Because the MEMS gyroscope is made from the process technology in semiconductor device fabrication, it has small size, low-power and low price. However, the MEMS gyroscope has drift phenomenon caused by noise and calculation error. Precision ADC (analog to digital converter) and accurate sensitivity are needed to minimize the drift phenomenon. Therefore, this paper proposes the method of the sensitivity optimization of the MEMS gyroscope using DEAS (dynamic encoding algorithm for searches). For experiment, we used the AGV mounted with a laser navigation system which is able to measure accurate position of the AGV and compared result by the sensitivity value calculated by the proposed method with result by the sensitivity in specification of the MEMS gyroscope. In experimental results, we verified that the sensitivity value through the proposed method can calculate more accurate motion direction angle of the AGV.

• 한국전기전자재료학회논문지
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• 제20권5호
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• pp.403-409
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• 2007

In this paper, effects of the trench angle($\theta$) on the breakdown voltage according to the process parameters of p-base region and doping concentrations of n-drift region in a Trench Gate IGBT (TIGBT) device were analyzed by computer simulation. Processes parameters used by variables are diffusion temperature, implant dose of p-base region and doping concentration of n-drift region, and aspects of breakdown voltage change with change of each parameter were examined. As diffusion temperature of the p-base region increases, depth of the p-base region increases and effect of the diffusion temperature on the breakdown voltage is very low in the case of small trench angle($45\;^{\circ}$) but that is increases 134.8 % in the case of high trench angle($90\;^{\circ}$). Moreover, as implant dose of the p-base region increases, doping concentration of the p-base region increases and effect of the implant dose on the breakdown voltage is very low in the case of small trench angle($45\;^{\circ}$) but that is increases 232.1 % in the case of high trench angle($90\;^{\circ}$). These phenomenons is why electric field concentrated in the trench is distributed to the p-base region as the diffusion temperature and implant dose of the p-base increase. However, effect of the doping concentration variation in the n-drift region on the breakdown voltage varies just 9.3 % as trench angle increases from $45\;^{\circ}$ to $90\;^{\circ}$. This is why magnitude of electric field concentrated in the trench changes, but direction of that doesn't change. In this paper, respective reasons were analyzed through the electric field concentration analysis by computer simulation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.22-23
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• 2008

The conventional IGBT has two problems to make the device taking high performance. The one is high on state voltage drop associated with JFET region, the other is low breakdown voltage associated with concentrating the electric field on the junction of between p base and n drift. This paper is about the structure to effectively improve both the lower on state voltage drop and the higher breakdown voltage than the conventional IGBT. For the fabrication of the circular trench IGBT with the circular trench layer, it is necessary to perform the only one wet oxidation step for the circular trench layer. Analysis on both the on state voltage drop and the Breakdown voltage show the improved values compared to the conventional IGBT structure. Because the circular trench layer disperses electric field from p base and n drift junction to circular trench, the breakdown voltage increase. The on state voltage drop decrease due to reduction of JFET region and direction change of current path which pass through reversed layer channel.

• 제어로봇시스템학회논문지
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• 제19권10호
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• pp.947-954
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• 2013

This article focuses on a hemispherical resonator gyro driven by the Coriolis effect. The operational principle of resonator gyros and mathematical models are introduced. These models are useful to explain the behavior of a resonator and to design controllers. Several control tests of a resonator have been done. A resonator has been excited by electromagnets controlled by a computer. Its amplitude has been adjusted by a PI control. The transient response is matched with a simulation result based on a mathematical model. A vibrating pattern may drift due to non-uniform factors of a resonator. The drift of the vibrating pattern is controlled and aligned to a reference direction by a PI control. These results are very useful to understand the behavior of resonator gyros and to design advanced control algorithm for better performance.

• 한국해안해양공학회지
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• 제6권2호
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• pp.150-156
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• 1994

연안 퇴적물 이동에 의한 수영만의 광안리와 해운대 지역의 해안선 변화를 조사하였다. 이 지역에 가장 큰 영향을 미칠 것으로 추정되는 동쪽과 남쪽 사이에서 부는 바람의 15년간 풍향별 발생 빈도를 이용한 월별 평균 풍향과 풍속을 계산하여 JONSWAP법에 의한 심해 유의파를 추정하고, 굴절 및 천수효과에 의한 쇄파고와 쇄파각을 계산하였으며, 그에 의한 연안 퇴적물 이동량을 계산하고 퇴적물 이동량의 수급에 따른 해안선의 변화를 계산하였다. 광안리 지역에서는 주된 연안 퇴적물 이용이 남서에서 북동방향으로, 해운대 지역에서는 동쪽에서 서쪽으로 이동하는 것으로 나타났으며, 광안리 지역의 해안선은 북동쪽이 전진, 남서쪽이 후퇴하는 양상을 보이고, 해운대 지역은 동쪽이 후퇴, 서쪽이 전진하는 결과를 보이고 있다.

• 한국전기전자재료학회논문지
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• 제21권11호
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• pp.981-986
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• 2008

The conventional IGBT has two problems to make the device taking high performance. The one is high on state voltage drop associated with JFET region, the other is low breakdown voltage associated with concentrating the electric field on the junction of between p base and n drift. This paper is about the structure to effectively improve both the lower on state voltage drop and the higher breakdown voltage than the conventional IGBT. For the fabrication of the circular trench IGBT with the circular trench layer, it is necessary to perform the only one wet oxidation step for the circular trench layer. Analysis on both the on state voltage drop and the breakdown voltage show the improved values compared to the conventional IGBT structure. Because the circular trench layer disperses electric field from the junction of between p base and n drift to circular trench, the breakdown voltage increase. The on state voltage drop decrease due to reduction of JFET region and direction changed of current path which pass through reversed layer channel. The electrical characteristics were studied by MEDICI simulation results.

• Steel and Composite Structures
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• 제45권5호
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• pp.683-695
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• 2022

Conventional braces are often used to provide stiffness to structures; however due to buckling they cannot be used as seismic energy dissipating elements. In this study, a seismic energy dissipation device is proposed which is comprised of a bracing member and a steel hysteretic damper made of steel hexagonal plates. The hexagonal shaped designated fuse causes formation of plastic hinges under axial deformation of the brace. The main advantages of this damper compared to conventional metallic dampers and buckling-restrained braces are the stable and controlled energy dissipation capability with ease of manufacture. The mechanical behavior of the damper is formulated first and a design procedure is provided. Next, the theoretical formulation and the efficiency of the damper are verified using finite element (FE) analyses. An analytical model of the damper is established and its efficiency is further investigated by applying it to seismic retrofit of a case study structure. The seismic performance of the structure is evaluated before and after retrofit in terms of maximum interstory drift ratio, top story displacement, residual displacement, and energy dissipation of dampers. Overall, the median of maximum interstory drift ratios is reduced from 3.8% to 1.6% and the residual displacement decreased in the x-direction which corresponds to the predominant mode shape of the structure. The analysis results show that the developed damper can provide cost-effective seismic protection of structures.

• Earthquakes and Structures
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• 제7권5호
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• pp.647-665
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• 2014

Squat reinforced concrete walls require enough shear strength in order to promote flexural yielding, which creates the need for designers of an accurate method for strength prediction. In many cases, especially for existing buildings, strength estimates might be insufficient when more accurate analyses are needed, such as pushover analysis. In this case, estimates of load versus displacement are required for building modeling. A model is developed that predicts the shear load versus shear deformation of squat reinforced concrete walls by means of a panel formulation. In order to provide a simple, design-oriented tool, the formulation considers the wall as a single element, which presents an average strain and stress field for the entire wall. Simple material constitutive laws for concrete and steel are used. The developed models can be divided into two categories: (i) rotating-angle and (ii) fixed-angle models. In the first case, the principal stress/strain direction rotates for each drift increment. This situation is addressed by prescribing the average normal strain of the panel. The formation of a crack, which can be interpreted as a fixed principal strain direction is imposed on the second formulation via calibration of the principal stress/strain direction obtained from the rotating-angle model at a cracking stage. Two alternatives are selected for the cracking point: fcr and 0.5fcr (post-peak). In terms of shear capacity, the model results are compared with an experimental database indicating that the fixed-angle models yield good results. The overall response (load-displacement) is also reasonable well predicted for specimens with diagonal compression failure.

• 한국전기전자재료학회논문지
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• 제11권4호
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• pp.267-273
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• 1998

The band structures of $Si_{1-x}Ge_x$ layers grown on $Si_{1-y}Ge_y$ substrate are calculated using k$\cdot$p and strain Hamiltonians. The hole drift mobilities in the plane direction are then calculated by taking into account the screening effect and the density-of-states of the impurity band. When $Si_{1-x}Ge_x$ is grown on Si substrate, the mobilities of (110) and (111) $Si_{1-x}Ge_x$ layers are larger than that of (001) $Si_{1-x}Ge_x$. However, due to the large defect and surface scattering, (110) and (111) $Si_{1-x}Ge_x$ layers may not be useful for the development of the fast device. Meanwhile, when Si is grown on $Si_{1-y}Ge_y$ substrate, the mobilities of (001) and (110) Si layers are greatly enhanced. Based on the amount of defect and the surface scattering, it is expected that Si grown on (001) $Si_{1-y}Ge_y$ substrate, where the Ge contents is larger than 10%(y>0.1), has the highest mobility.