• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.13 no.2
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• pp.227-227
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• 1999

The electron energy distributions function were analysed in sulphur hexaflouride at E/N : 500~800(Td) for a case of non-equilibrium region in the mean electron energy. This paper describes the electron transport characteristics in $SF_6$ gas calculated for range of E/N values from 150~800(Td) by the Monte Carlo simulation and Boltzmann equation method using a set of electron collision cross sections determined by the authors and the values of electron swarm parameters. The results gained that the value of ane1ctron swarm parameter such as the e1ectron drift velocity, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients agree with the experimental and theoretical for a range of E/N. The properties of electron avalanches in an electron energy non-equilibrium region.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.2
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• pp.71-75
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• 2014

To observe the optical characteristic of oxide semiconductor depending on the degree of bonding structures, SiOC, ZnO and IGZO were prepared by the RF magnetron sputter system and chemical vapor deposition. Generally, crystal ZnO, amorphous SiOC and IGZO changed the optical characteristics in according to the electro-chemical behavior due to the oxygen vacancy at an interface between different groups. Transmittance of SiOC and IGZO with amorphous structures was higher than that of ZnO with crystal structure, because of lowering the carrier concentration due to the recombination of electron and holes carriers as oxygen vacancies. Besides, the energy gap of amorphous SiOC and IGZO was higher than the energy gap of crystal ZnO. The diffusion mobility of holes is higher than the drift mobility of electrons.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.24-27
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• 2009

A hybrid model has been developed which adopts a fluid model for electrons and a particle-in-cell (PIC) model for ions. Using the hybrid simulation, the discharge characteristics are investigated with the diagnostics for the electric field and the wall charge profile, density distributions of charged and excited particles, distributions of ultraviolet lights on phosphor, and the visible lights emitted from the PDP cell. Also, energy and angle distributions of the ions at the MgO protective layer are obtained for the analysis of material effect. The comparison of hybrid simulation results with experimental results as well as that with the conventional fluid simulation shows that the new model is more adequate for the simulation of PDP cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.33-35
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• 1988

From the study of mechanism of electrical conduction of film which is made from Polyethylene Terephthalate at very high temperature which is larger than low electric field and glass transition point, we find that there is a extraordinary non ohmic region (I∝V$^n$, 0

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.175-180
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• 2003

As the integrated circuit device shrinks to the deep submicron regime, the ion implantation process with high ion dose has been attracted beyond the conventional ion implantation technology. In particular, for the case of boron ion implantation with low energy and high dose, the stabilization and throughput of semiconductor chip manufacturing are decreasing because of trouble due to the machine conditions and beam turning of ion implanter system. In this paper, we focused to the improved characteristics of processing conditions of ion implantation equipment through the modified deceleration mode. Thus, our modified recipe with low energy and high ion dose can be directly apply in the semiconductor manufacturing process without any degradation of stability and throughput.

• Proceedings of the KIEE Conference
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• 2002.06a
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• pp.102-105
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• 2002

In this paper, the electron transport characteristics in $CF_4$ has been analysed over the E/N range 1${\sim}$300 [Td] by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity, longitudinal diffusion coefficient, the ratio of the diffusion coefficient to the mobility, electron ionization and attachment coefficients, effective ionization coefficient, mean energy, collision frequency and the electron energy distribution function. The swarm parameter from the swarm study are expected to serve as a critical test of current theories of low energy electron scattering by atoms and molecules, in particular, as well as crucial information for quantitative simulations of weakly ionized plasmas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.613-616
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• 2001

This $SF_{6}$ gas is widely used in industrial of insulation field. In this paper, $N_2$ is mixed to improve pure $SF_{6}$ gas characteristics. Electron transport coefficients in $SF_{6}$-$N_2$ mixture gases are simulated in range of E/N values from 70 to 400 [Td] at 300K and 1 Torr by using Boltzmann equation method. The results of this method, which are like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient, and critical E/N, can be important data to present characteristic of gas for insulation. Specially critical E/N is a data to evaluate insulation strength of a gas and is presented in this paper for various mixture ratios of $SF_{6}$-$N_2$ mixture gases.

• Proceedings of the KIEE Conference
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• 1996.07b
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• pp.1313-1315
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• 1996

This paper presents a new method to obtain more stable and precise A/D conversion for remote sensing use. Hardware is designed to compensate offset voltage and drift & temperature characteristics, as well as to perform dual slop A/D converter by using single chip microprocessor. Serial communication program which is based on ASCII code commands is also developed to add initial setup & calibration functions as well as to perform A/D data communication. Proposed method will give a good applications to the industrial field where a high precision remote sensing is required.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.468-469
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• 2007

In this paper, the electron transport characteristics in $CF_4$ has been analysed over the E/N range 1~300[Td] by a two-tenn approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity, longitudinal diffusion coefficient, the ratio of the diffusion coefficient to the mobility, electron ionization and attachment coefficients, effective ionization coefficient, mean energy, collision frequency and the electron energy distribution function. The swarm parameter from the swarm study are expected to serve as a critical test of current theories of low energy electron scattering by atoms and molecules, in particular, as well as crucial information for quantitative simulations of weakly ionized plasmas.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.156-158
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• 2002

Reduction of on-resistance($R_{on}$) in high voltage devices is of critical importance for the power consumption of the device. $R_{on}$ decreases with increase of the doping concentration of the drift region. However, breakdown voltage(BV) decreaes also with increase of doping concentration. In this report, a multi-resurf LDMOS[1] strcuture is proposed to reduce the $R_{on}$ which allows no degradation in BV. The on-and off-state characteristics of the proposed structure are simulated using the two-dimensional devices simulator ATLAS and compared with those from the conventional structure.