• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2000.10a
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• pp.196-203
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• 2000

In this study, the evaluation method of diffusion characteristics of Suspended Soli&SS) and the generation limit(source and thick) are investigated, which is significantly affecting on marine examined by construction works such as dredging and reclamation. Dispersion characteristics of SS is examined by hydraulic tests and numerical works in consideration with the Pusan Port. Hydraulic model test was performed in 2-D wave flume to find the limit wave conditon of re-suspension of solid as well as the time dependent characteristics of settlement The results obtainded in the study are as follows; 1) The quantituative evaluation af SS is the basic parameter of marine environmental impact assessment in related with the port development The SS increases as the water content of sea bed solid increases and the density decreases. 2) The sea bed solid in Sinsundai area, Pusan Port has the water content range of 83~157% 3) The ratio of suspension velocity against settlement velocity is about 0.25 and SS concentration converges as the wave heigh. 4) The SS increases 2 time when time step increases 3 time(10 sec to 30 sec) in numerical simulation It means that the effect of the time step should be checked in detail to stable. The diffusion The diffusion coefficient are Affiected senstively in the dispersion process while sea ved friction coefficinet have not strong relation in the simulated area

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.214-217
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• 2017

An IGBT (insulated gate bipolar transistor) device has an excellent current-conducting capability. It has been widely employed as a switching device to use in power supplies, converters, solar inverters, and household appliances or the like, designed to handle high power. The aim with IGBT is to meet the requirements for use in ideal power semiconductor devices with a high breakdown voltage, an on-state voltage drop, a high switching speed, and high reliability for power-device applications. In general, the concentration of the drift region decreases when the breakdown voltage increases, but the on-resistance and other characteristics should be reduced to improve the breakdown voltage and on-state voltage drop characteristics by optimizing the design and structure changes. In this paper, using the T-CAD, we designed the NPT-IGBT (non punch-through IGBT) and FS-IGBT (field stop IGBT) and analyzed the electrical characteristics of those devices. Our analysis of the electrical characteristics showed that the FS-IGBT was superior to the NPT-IGBT in terms of the on-state voltage drop.

• Journal of Institute of Control, Robotics and Systems
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• v.6 no.1
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• pp.104-111
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• 2000

A fuzzy logic Run-by-Run(RbR) controller and an in -line wafer characteristics prediction scheme for the rapid thermal processing system have been developed for the study of process repeatability. The fuzzy logic RbR controller provides a framework for controlling a process which is subject to disturbances such as shifts and drifts as a normal part of its operation. The fuzzy logic RbR controller combines the advantages of both fuzzy logic and feedback control. It has two components : fuzzy logic diagnostic system and model modification system. At first, a neural network model is constructed with the I/O data collected during the designed experiments. The wafer state after each run is assessed by the fuzzy logic diagnostic system with featuring step. The model modification system updates the existing neural network process model in case of process shift or drift, and then select a new recipe based on the updated model using genetic algorithm. After this procedure, wafer characteristics are predicted from the in-line wafer characteristics prediction model with principal component analysis. The fuzzy logic RbR controller has been applied to the control of Titanium SALICIDE process. After completing all of the above, it follows that: 1) the fuzzy logic RbR controller can compensate the process draft, and 2) the in-line wafer characteristics prediction scheme can reduce the measurement cost and time.

• Journal of Sensor Science and Technology
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• v.27 no.5
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• pp.340-344
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• 2018

Electrodes are an important part of electrocardiography (ECG); disposable electrodes have been extensively used. However, personal ECG monitoring devices for Internet of Things applications require reusable electrodes. As there have been no systematic studies on the characteristics of reusable electrodes to date, we conducted this study to assess the performance and feasibility of electrodes with different materials. We built reusable electrodes using twelve different metallic materials, including commonly used copper, silver, zinc, plating materials, chemically inert titanium, stainless steel, and aluminum. Each electrode was fabricated to a size of $5{\times}10mm$. Their characteristics such as offset, baseline drift, stabilization time, and chemical inertness were compared. A personal ECG monitoring system was used to test the manufactured electrodes. The performances of the Ag, Cu, and Zn electrodes were better than the performances of other electrodes. However, these materials may not be used owing to the chemical changes that occur when the electrodes are in contact with the skin, such as discoloration and corrosion, which deteriorate their electrical characteristics. Titanium, stainless steel, and aluminum are chemically stable. The titanium electrode showed the best performance among the three, and it is our recommendation as a material for manufacturing reusable electrodes.

• Journal of Sensor Science and Technology
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• v.14 no.6
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• pp.395-401
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• 2005

A highly stable quartz crystal microbalance (QCM) that showed a stability of frequencies and exhibited a very low noise level has been developed. The long-term drift was <0.05 Hz/h over a period of 10 h, and the short-term rms (root mean square) noise was <0.015 Hz. Our QCM sensor was used as a humidity sensor employing a poly(methyl methacrylate) (PMMA) polymer film as a hygroscopic layer, which showed good characteristics in the relative humidity (RH) range of $2{\sim}90%$ RH. Comparing the characteristics of the QCM sensor with those of other types of humidity sensors employing PMMA film as a hygroscopic layer, and with other QCM sensors employing other hygroscopic layers is represented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.37-38
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• 2009

SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. It is known that in SiC power MOSFET, the JFET region width is one of the most important parameters. In this paper, we demonstrated that the switching performance of DMOSFET is dependent on the with width of the JFET region by using 2-D Mixed-mode simulations. The 4H-SiC DMOSFETs with a JFET region designed to block 800 V were optimized for minimum loss by adjusting the parameters of the n JFET region, CSL, and n-drift layer. It has been found that the JFET region reduces specific on-resistance and therefore the switching characteristics depend on the JFET region.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.8
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• pp.463-467
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• 2000

In this paper, the new LIGBT structures with trap injection are proposed to improve switching characteristics of the conventional SOI LIGBT. The Simulations are performed in order to investigate the effects of the positiion, whidth and concentration of trap injection region with a reduced minority carrier lifetime using 2D device simulator MEDICI. Their electrical characteristics are analyzed and the optimum design parameters are extracted. As a result of simulation, the turn off time for the model A with the trap injection is $0.78\mus$. These results indicate the improvement of about 2 times compared with the conventional SOI LIGBT because trap injection prevents minority carriers which is stored in the n-drift region during turn off switching. The latching current is $1.5\times10^{-4}A/\mum$ and forward blocking voltage is 168V which are superior to those of conventional structure. It is shown that the trap injection is very effective to reduce the turn off time with a little increasing of on-state voltage drop if its design and process parameters are optimized.

• Journal of Electrical Engineering and Technology
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• v.9 no.3
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• pp.843-847
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• 2014

In Super Junction (SJ) MOSFETs, charge balance is the most important issue of the SJ fabrication process. In order to achieve the best electrical characteristics, such as breakdown voltage and on-resistance, the N-type and P-type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, which is known as the charge balance condition. In conventional charge balance analysis, based on multi-epi process SJ MOSFETs, analytical model has only N, P pillar width and doping concentration parameter. But applying a conventional charge balance principle to trench filling process, easier than Multi-epi process, is impossible due to the missing of the trench angle parameter. To achieve much more superior characteristics of on-resistance in trench filling SJ MOFET, the appropriate trench angle is necessary. So in this paper, modulated charge balance analysis is proposed, in which a trench angle parameter is added. The proposed method is validated using the TCAD simulation tool.

• Journal of Korean Association for Spatial Structures
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• v.20 no.4
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• pp.93-100
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• 2020

In this study, structural characteristics were analyzed by combining gravity load and lateral loads such as seismic loads through static analysis of example structures, and the static characteristics of the twisted structure according to the plane rotation angle were also analyzed. Example structures were selected as regular structure, and twisted structures; 1.0, 2.0, and 3.0 degree angle of rotation per story, and static analysis was performed by the load combination case 1 and case 2. As a result the story drift ratio of the twisted-shaped structure also increased as the plane rotation angle per story increased. The eccentricity according to the load combination was the highest in the lower stories of all analysis models, and the eccentricity was found to be larger as the rotation angle decreased. The twisted-shaped structure was more responsible for the bending moment of the column than the regular structure, and the vertical member axial force of all analysis models was almost similar.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.9
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• pp.322-327
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• 2012

Parallel-plate-type scanning sensors have been commercially used for X-ray imaging sensors. In this study, we manufactured the scan typed 1D X-ray image sensor that can be used to obtain scanning images, by using the plasma display panel (PDP) fabrication process. We fabricated drift and pixel electrodes in the glass chamber and injected Xe gas at atmospheric pressure. We evaluated the intensity of a pixel signal depending on the bias voltage on the drift electrode and investigated the characteristics of shielding effect on the single pixel using lead (Pb). The adsorption rate of X-ray photon is low (4%) on the soda lime glass (1.1mm) and the electrical signal detected on the X-ray sensor was increased in the high bias voltage. We acquired digital X-ray scanning image with our DAS (data acquisition system) and sensor scanning system.