• Transactions of the Korean Society of Machine Tool Engineers
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• v.10 no.4
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• pp.70-75
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• 2001

In metal cutting, the machining accuracy is more affected by thermal errors than by geometric errors. This paper models of the thermal errors for error analysis and develops on-the-machine measurement system by which the volumetric error are measured and compensated. The thermal error is modeled by means of angularity errors of a column and thermal drift error of the spindel unit which are measured by the touch probe unit with a star type styluses, a designed spherical ball arti-fact, and five gap sensors. In order to analyze the thermal characteristics under several operating conditions, experiments performed with the touch probe unit and five gap sensors on the vertical and horizontal machining centers.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.201-204
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• 2001

LDMOSFET devices operated at low temperature have applications on satellite, space shuttle and low temperature system, etc. In this study, we measured the electrical characteristics of 100v Class LDMOSFET for low temperature application. Measurement data are taken over a wide range of temperatures (100K-300K) and various drift region lengths(6.6${\mu}{\textrm}{m}$, 8.4${\mu}{\textrm}{m}$, 12.6${\mu}{\textrm}{m}$). Maximum transconductance, $g_{m}$ and drain current at low temperatures(~100K) increased over about 260%, 50% respectively, in comparison with the data at room temperature. Breakdown voltage B $V_{ds}$, and specific on- resistance decreased. Besides, ratio $R_{on}$ BV, a figure of merit of the device, decreased with decreasing temperature.

• Journal of IKEEE
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• v.7 no.1 s.12
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• pp.1-8
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• 2003

In this study, the high performance BCD device structure which satisfies the high voltage and fast switching speed characteristics is devised. Through the process and device simulation, optimal process spec. & device spec. are designed. We adapt double buried layer structure, trench isolation process, n-/p-drift region formation and shallow junction technology to optimize an electrical property as mentioned above. This I.C consists of 20V level high voltage bipolar npn/pnp device, 60V level LDMOS device, a few Ampere level VDMOS, 20V level CMOS device and 5V level logic CMOS.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2000.10a
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• pp.449-453
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• 2000

In metal cutting, the machining accuracy is more affected by thermal errors than by geometric errors. This paper models of the thermal errors for error analysis and develops on-the-machine measurement system by which the volumetric error are measured and compensated. The thermal error is modeled by means of angularity errors of a column and thermal drift error of the spindle unit which are measured by the touch probe unit with a star type styluses, a designed spherical ball artifact, and five gap sensors. In order to analyze the thermal characteristics under several operating conditions, experiments performed with the touch probe unit and five gap sensors on the vertical and horizontal machining centers.

• Journal of Information Display
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• v.8 no.3
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• pp.11-16
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• 2007

Theoretical simulations of spatial distribution of charge carriers and recombination rate, and J-V characteristics of the multi-layer organic light emitting diodes are carried out. Drift-diffusion current transport, field-dependent carrier mobility, exponential and Gaussian trap distribution, and Langevin recombination models are included in this computer model. The simulated results show good agreement with the experimental data confirming the validity of the physical models for organic light emitting diodes.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.7
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• pp.1144-1151
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• 1994

The humidity-sensitive specimens-(BaS11T-S1xTCaS1xT)TiOS13T, x=0, 0.1, 0.2, 0.3, 0.4, 0.5-were fabricated by a solid-state reaction method which is easy in process control of microstructure and good in mass production, and their humidity-sensitive characteristics were examined. Ca inhibits grain growth and the open porosity increases with Ca substitution, and the specimens at x=0.5 show the best humidity sensitivity. Their humidity sensitivity is higher at the lower frequencies, and drift phenomenon in humidity sensitivity is exhibted with aging in the air, which disappears by a heat treatment. The electrical conduction with water adsorption is dominated by the ions, and the activation energy decreases with increasing relative humidity.

• Proceedings of the KIEE Conference
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• 2005.10a
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• pp.97-100
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• 2005

This paper describes the electron transport characteristics in SiH4 has been analysed over the E/N range 0.5${\sim}$300[Td] and Pressure value 0.5, 1, 2.5 [Torr] by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity, diffusion coefficient, electron ionization, mean energy and the electron energy distribution function. The electron energy distribution function has been analysed in $SiH_4$ at E/N=30, 50[Td] for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The results of Boltzmann equation and Monte carlo simulation have been compared with experimental data by Pollock, Ohmori, cottrell and Walker.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.148-151
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• 2011

We designed and fabricated aluminium gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) with stable reverse blocking characteristics established by employing a selective fluoride plasma treatment on the drainside gate edge region where the electric field is concentrated. Implanted fluoride ions caused a depolarization in the AlGaN layer and introduced an extra depletion region. The overall contour of the depletion region was expanded along the drift region. The expanded depletion region distributed the field more uniformly and reduced the field intensity peak. Through this field modulation, the leakage current was reduced to 9.3 nA and the breakdown voltage ($V_{BR}$) improved from 900 V to 1,400 V.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 2003.10a
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• pp.209-216
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• 2003

The purpose of this study is to investigate the response characteristics of pushover analysis of upper wall-lower frame system with X and Y-directions' lateral load Pushover analysis estimates initial elastic stiffness, post-yielding stiffness, and plastic hinges on each story of structures through three-dimensional nonlinear analysis program. The conclusions of this study are as follows; (1) As a result of pushover analysis, the magnitude of nonlinear response and distribution of yield hinge in lower structure are similar with both X and Y directions, but not in upper structure because of different relative stiffness. (2) The maximum drift ratio of roof is larger for X-direction than for Y-direction with respect to magnitude of shear wall areas in upper structure.

• Journal of Electrical Engineering and Technology
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• v.9 no.3
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• pp.964-969
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• 2014

In Super Junction MOSFET, Charge Balance is the most important issue of the trench filling Super Junction fabrication process. In order to achieve the best electrical characteristics, the N type and P type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, called Charge Balance Condition. In this paper, two methods from the fabrication process were used at the Charge Balance condition: Trench angle decreasing process and Bottom implantation process. A lower on-resistance could be achieved using a lower trench angle. And a higher breakdown voltage could be achieved using the bottom implantation process. The electrical characteristics of manufactured discrete device chips are compared with those of the devices which are designed of TCAD simulation.