• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3230-3232
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• 1999

In this paper describes the design and improvement of a hybrid module for dual slope A/D converter. Since the input voltage to be converted is very sensitive and small. A/D converter must have the temperature stability. low-drift, and the high-resolution the conversion. A dual slop A/D converter circuit which is controlled by microprocessoer has been developed to reduce the offset voltage and the drift characteristics of operation amplifiers, and to improve the A/D conversion speed. Also hybrid module has been adapted to obtain the to obtain the stable and accurate A/D conversion for low cost use. The evaluation of the designed hybrid module has been shown as having a good performance, which will give usefull application to the industrial measurements use.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.844-849
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• 2009

The moving behavior of particle with voltage biasing is studied by analyzing the displacement current generated in electrodes and the drift current by moving particles in cell gap. These currents are ascertained by optical reflectivity on the panel. We obtained the saturated current after a peak in threshold voltage which is coincide with reflectivity of 80%. These saturated optical reflectivity and its drift current offer optimum q/m of particles and driving voltage and can be analytically studied on grey scale methods. Especially regional analysis is useful to aging and driving voltage and the understanding of operating mechanism of charged particle type display.

• Journal of Digital Contents Society
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• v.18 no.6
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• pp.1193-1198
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• 2017

The IGBT structure developed in this paper is used as a high power switch semiconductor for DC transmission and distribution and it is expected that it will be used as an important electronic device for new and long distance DC transmission in the future by securing fast switching speed and improved breakdown voltage characteristic. As a new type of next generation power semiconductors, it is designed to improve the switching speed while at the same time improving the breakdown voltage characteristics, reducing power loss characteristics, and achieving high current density advantages at the same time. These improved properties were obtained by further introducing SiO2 into the N-drift region of the Planar IGBT and were compared and analyzed using the Sentaurus TCAD simulation tool.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.767-770
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• 2010

In this work, we investigated the static characteristics of 4H-SiC vertical metal-oxidesemiconductor field effect transistors (VMOSFETs) by adjusting the doping level of n-epilayer and the effect of a current spreading layer (CSL), which was inserted below the p-base region with highly doped n+ state ($5{\times}10^{17}cm^{-3}$). The structure of SiC VMOSFET was designed by using a 2-dimensional device simulator (ATLAS, Silvaco Inc.). By varying the n-epilayer doping concentration from $1{\times}10^{16}cm^{-3}$ to $1{\times}10^{17}cm^{-3}$, we investigated the static characteristics of SiC VMOSFETs such as blocking voltages and on-resistances. We found that CSL helps distribute the electron flow more uniformly, minimizing current crowding at the top of the drift region and reducing the drift layer resistance. For that reason, silicon carbide VMOSFET structures of highly intensified blocking voltages with good figures of merit can be achieved by adjusting CSL and doping level of n-epilayer.

• Journal of Navigation and Port Research
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• v.44 no.2
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• pp.53-64
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• 2020

This paper discusses the hydrodynamic characteristics of a catamaran at low speed. In this study, the Delft 372 catamaran model was selected as the target hull to analyze the hydrodynamic characteristics by using the RANS (Reynold-Averaged Navier-Stokes) numerical method. First, the turbulence study and mesh independent study were conducted to select the appropriate method for numerical calculation. The numerical method for the CFD (Computational Fluid Dynamic) calculation was verified by comparing the hydrodynamic force with that obtained experimentally at high speed condition and it rendered a good agreement. Second, the virtual captive model test for a catamaran at low speed was conducted using the verified method. The drift test with drift angle 0-180 degrees was performed and the resulting hydrodynamic forces were compared with the trends of other ship types. Also, the pure rotating test and yaw rotating test proposed by Takashina, (1986) were conducted. The Fourier coefficients obtained from the measured hydrodynamic force were compared with those of other ship types. Conversely, pure sway test and pure yaw test also were simulated to obtain added mass coefficients. By analyzing these results, the hydrodynamic coefficients of the catamaran at low speed were estimated. Finally, the maneuvering simulation in low speed conditions was performed by using the estimated hydrodynamic coefficients.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.11 no.5
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• pp.2741-2761
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• 2017

With the purpose of copyright protection for digital video, a novel H.264/AVC watermarking algorithm based on JND model is proposed. Firstly, according to the characteristics of human visual system, a new and more accurate JND model is proposed to determine watermark embedding strength by considering the luminance masking, contrast masking and spatial frequency sensitivity function. Secondly, a new embedding strategy for H.264/AVC watermarking is proposed based on an analysis on the drift error of energy distribution. We argue that more robustness can be achieved if watermarks are embedded in middle and high components of $4{\times}4$ integer DCT since these components are more stable than dc and low components when drift error occurs. Finally, according to different characteristics of middle and high components, the watermarks are embedded using different algorithms, respectively. Experimental results demonstrate that the proposed watermarking algorithm not only meets the imperceptibility and robustness requirements, but also has a high embedding capacity.

• Bulletin of the Society of Naval Architects of Korea
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• v.20 no.1
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• pp.47-58
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• 1983

A study is made, in the framework of linear potential theory, to investigate the hydrodynamic characteristics of two-dimensional wave-energy absorbers as like the Salter's duck and an oscillating cam with Lewis-form section, which undergo uncoupled heaving and rolling motions in an incident linear gravity wave in deep water. Wave energy is supposed to be extracted by a linearly damped generator with an spring. Some well-known formulae in ship hydrodynamics such as Haskind-Newman relation and Bessho-Newman relation are utilized in forms of Kochin functions to derived expressions for efficiency, breaking effect and drift force of the absorber. Maximum ideal efficiency of 100% can be arrived at an prescribed tuning frequency. Coupling effect is also examined to assess the detrimental effect of sway on efficiency. From numerical calculations for both types of two-dimensional devices it may be concluded that a wave-energy absorber functions at the same time as a wave breaker and that the drift force acting on the device becomes smaller when it absorbs wave energy than as it oscillates freely. Finally the study is extended to an infinite array system, equivalent to a body in a canal, to show that all incident wave energy can be absorbed regardless of the absorber's size, only if the optimum space and the optimum condition of control are realized.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.785-789
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• 2013

Silicon Carbide (SiC) is the material with the wide band-gap (3.26 eV), high critical electric field (~2.3 MV/cm), and high bulk electron mobility (~900 $cm^2/Vs$). These electronic properties allow attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. In general, device design has a significant effect on the switching and electrical characteristics. It is known that in this paper, we demonstrated that the switching performance and breakdown voltage of IGBT is dependent with doping concentration of p-base region and drift layer by using 2-D simulations. As a result, electrical characteristics of SiC-IGBT deivce is higher breakdown voltage ($V_B$= 1,600 V), lower on-resistance ($R_{on}$= 0.43 $m{\Omega}{\cdot}cm^2$) than Si-IGBT. Also, we determined that processing time and cost is reduced by the depth of n-drift region of IGBT was reduced.

• Journal of IKEEE
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• v.25 no.2
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• pp.371-375
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• 2021

In this paper, a SiC-based LIGBT structure that can be used at high voltage and high temperature is presented. In order to improve the low current characteristic, a dual-emitter symmetrical around the gate is inserted. In order to verify the characteristics of the proposed device, simulation and design were conducted using Sentaurus TCAD simulation, and a comparative study was conducted with a general LIGBT. In addition, splitting was performed by designating a variable for the length of the N-drift region in order to verify the electrical characteristics of the minority carriers. As a result of the simulation it was confirmed that the proposed dual-emitter structure flows a higher current at the same voltage than the conventional LIGBT.

• Journal of the Korean Society of Industry Convergence
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• v.5 no.1
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• pp.39-43
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• 2002

In present much CMOS devices used in VLSI circuit and Logic circuit. With increasing a number of device in VLSI, the confidence becomes more serious. This paper describe the mechanism of breakdown on CMOS, especially n-MOS, based on Hydro Dynamic model with device self-heating. Additionally, illustrate the CMOS latch-up characteristics on simplified device structure on this paper.