• Proceedings of the Computational Structural Engineering Institute Conference
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• 2005.04a
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• pp.121-128
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• 2005

This study presents an effective stiffness-based optimal technique to control quantitatively lateral drift for shear wall structures subject to lateral loads. To this end the displacement sensitivity depending on behavior characteristics of shear wall structures is established. Also, the approximation concept that can preserve the generality of the mathematical programming and can efficiently solve large scale problems is introduced. Resizing sections in the stiffness-based optimal design are assumed to be uniformly varying in size and the technique of member grouping is considered for the improvement of construction efficiency Two types of 11-story shear wall structures are presented to illustrate the features of the quantitative lateral drift control technique proposed in this study.

• Proceedings of the KIEE Conference
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• 2006.10b
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• pp.159-162
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• 2006

In this paper energy distribution function in $SiH_4$ has been analysed over the E/N range 0.5${\sim}$300Td and Pressure value 0.5, 1.0, 2.5 Torr by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity, diffusion coefficient, electron ionization, mean energy and the electron energy distribution function. The electron energy distribution function has been analysed in $SiH_4$ at E/N=30, 50Td for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values.

• Proceedings of the KIPE Conference
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• 2003.07a
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• pp.125-127
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• 2003

Lateral MCT(MOS-controlled thyristor)소자의 전기 적 특성 Parameters의 변화에 따른 스위칭 특성을 조사하였다. 제안된 Lateral 구조의 MCT는 채널과 drift영역의 제작과정이 간편하여 ON저항이 작으면서, 대전류용인 전력소자의 제작이 가능할 것으로 사료되는데, SPICE와 MEDICI 시뮬레이션을 이용하여 drift 저항, transit time및 불순물 농도 분포에 따른 전기적 특성을 알아보았다. 불순물의 농도와 채널길이의 변수에 의한 소자의 저항을 변화시켜 U 특성과 주파수 특성을 조사하였는데, 저항이 커질수록 turn-off 시간과 ON 저항은 증가함을 나타냈다.

• Architectural research
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• v.2 no.1
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• pp.61-69
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• 2000

This research focused on the hysteretic energy performance of 12 steel moment-resisting frames, which were intentionally designed by three types of design philosophies, strength control design, strength and drift control design, and strong-column and weak-beam control design. The energy performances of three designs were discussed In view of strength increase effect, stiffness increase effect, and strong-column and weak-beam effects. The mean hysteretic energy of the 12 basic systems were statically processed and compared to that of single-degree-of-freedom systems. Hysteretic energy was not always increased with an increase of strength and stiffness in the steel moment-resisting frames. Hysteretic energy between strong-column and weak-beam design and drift control design with the same stiffness was not sensitive each other for these types of mid-rises of steel moment-resisting frames.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.844-847
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• 2001

In this work, transient characteristics of the Non-Punch Through(NPT) Insulated Gate Bipolar Transistor(IGBT) has been studied. we has analyzed with lifetimes excess minority carrier injected into N-dirft, base region of IGBT's BJT part and accumulated charge of on-state which affected swiching characteristic. In this paper, excess minority carrier and charge distribution in active base region is expressed analytically. This analysis proposed optical trade-off between lifetimes and accumulated charge for decreasing switching losses because charge result in switching loss when device was tuned off.

• Proceedings of the Korea Concrete Institute Conference
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• 2010.05a
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• pp.115-116
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• 2010

To research the fragility of exterior joints of RC frame building which are not designed to seismic design code, four T shaped beam-column subassemblies are designed and tested with displacement control until to reach 3.5% story drift. From the results, the non-seismic detailed specimen failed in exterior joint before to reach to 1.0% drift, which is far less than the recommendation value of FEMA 356 and their strengths are less than 0.85 times of the nominal flexural strength.

• Journal of Sensor Science and Technology
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• v.25 no.3
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• pp.161-172
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• 2016

The use of a chemical sensor array can help discriminate between chemicals when comparing one sample with another. The ability to classify pattern characteristics from relatively small pieces of information has led to growing interest in methods of sensor recognition. A variety of pattern recognition algorithms, including the adaptive radial basis function network (RBFN), may be applicable to gas and/ or odor classification. In this paper, we provide a broad review of approaches for various types of gas and/or odor identification techniques based on RBFN and drift compensation techniques caused by sensor poisoning and aging.

• The Journal of the Acoustical Society of Korea
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• v.24 no.2E
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• pp.61-66
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• 2005

Experimental work in underwater acoustic communications using passive phase conjugation has shown that the demodulation error depends on the relative drift rate between the source and receiver [Rouseff et al., IEEE J. Oceanic Eng. 26, 821-831 (2001)]. The observed effect involves the mismatch between the initial impulse response and the subsequent response after the source or receiver has changed locations. In the present work, the effect of drifting source is analyzed by numerical simulations and compared to the experimental results. The communications bit error rate is qualified as a function of drift rate, drifting direction, and source-receiver range.

• Korean Journal of Materials Research
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• v.17 no.7
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• pp.371-375
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• 2007

In-situ observation of electromigration behavior of eutectic SnPb solder was performed as a function of line length at $100^{\circ}C$, $6{\times}10^4A/cm$ condition in a scanning electron microscope chamber. The incubation time for edge drift and the edge drift velocity increase as line length increases, which are discussed with the void nucleation stage of solder bump and the electromigration back flux force, respectively. Finally, the existence of electromigration product (jL) and its line length dependency are also discussed.

• Macromolecular Research
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• v.14 no.6
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• pp.630-633
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• 2006

In heterojunction photovoltaic devices of $ITO/TiO_2/poly$(3-alkylthiophene)/Au, the photo current was characterized at different temperatures for different alkyl chain lengths and regioregularities: regiorandom, regioregular poly(3-hexylthiophene), and regioregular poly(3-dodecylthiophene). The regioregularity and alkyl chain length affected the photovoltaic characteristics due to differences in hole-carrier transportation. The drift charge mobilities of these devices were analyzed by the space-charge-limited current theory using the relation between the dark current and the bias voltage. The photocurrent in the devices based on poly(3-alkylthiophene)s decreased rapidly below the temperature at which the drift charge mobility was $10^{-5}\;cm^2/V{\cdot}s$.